研究目的
Investigating the electrical spin injection into and spin extraction from a wide-bandgap semiconductor SiC at room temperature via Schottky junctions.
研究成果
The study successfully demonstrated room temperature spin injection into SiC via Schottky junctions, revealing two distinct spin relaxation channels with different relaxation times. The findings highlight the potential of SiC in spintronic applications, especially for high power and temperature environments.
研究不足
The study is limited by the sensitivity of spin relaxation times to bias conditions and the presence of interfacial defect states within the Schottky barrier, which may affect the efficiency of spin injection and extraction.
1：Experimental Design and Method Selection:
The study utilized Schottky junctions for spin injection and extraction from SiC. The methodology involved the use of CoFeB electrodes and SiC wafers doped with nitrogen to produce Schottky junctions.
2：Sample Selection and Data Sources:
n+-SiC wafers doped with nitrogen were used. The carrier density and mobility of SiC were measured at different temperatures.
3：List of Experimental Equipment and Materials:
CoFeB films were deposited in ultra-high vacuum magneto-sputtering systems (ULVAC). A Physical Properties Measurement System (PPMS-9T, Quantum Design) and an electromagnet were used for magnetic field application. Keithley 2400 and Keithley 2182 were used for transport measurements.
4：Experimental Procedures and Operational Workflow:
The study involved fabricating 3-terminal devices using ultraviolet lithography, measuring I-V characteristics of the Schottky junctions, and conducting transport measurements under different magnetic fields.
5：Data Analysis Methods:
The data was analyzed to determine spin relaxation times and the effect of bias conditions on spin transport channels.
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