- 标题
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- 实验方案
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Cu/Sb Codoping for Tuning Carrier Concentration and Thermoelectric Performance of GeTe-Based Alloys with Ultralow Lattice Thermal Conductivity
摘要： Pristine GeTe shows promising thermoelectric performance but is limited by the high carrier concentration (nH) from Ge vacancies and thermal conductivity. Herein, Cu/Sb was chosen as codopants to suppress the high nH and to decrease thermal conductivity. In this condition, a promising zT of ～1.62 under 773 K was acquired in the Ge0.85Te(CuSb)0.075 system proposed in this paper/work. Results show that as the dopant concentration increases, the power factor rises due to the reduction of the nH to ～1 × 1020 cm?3. Apart from this, the total thermal conductivity also declines from ～7.4 W m?1 K?1 to ～1.59 W m?1 K?1 originating from an ultralow lattice thermal conductivity, in which the multiscatter mechanism from grain boundaries and point defect disperses the frequency phonons di?erently. The ?ndings in this paper combine thermal and electronic strategies and lay the foundation to develop Pb-free thermoelectric materials.
关键词： multiscatter mechanism,Cu/Sb codoped GeTe,thermoelectric materials,ultralow lattice thermal conductivity,zT value,carrier concentration,Seebeck coefficient
更新于2025-11-14 17:03:37
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[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Thermoelectric Conversion Devise Using Ga-Sn-O Thin Film Prepared by Mist CVD Method
摘要： We proposed a GTO thin film thermoelectric conversion devise by the mist CVD method. The thermoelectric conversion devise with the best performance had a Seebeck coefficient of -193[μV/K], a conductivity of 6.35[S/cm], and a PF of 0.0179[mW/mK2].
关键词： Ga-Sn-O,Seebeck coefficient,conductivity,mist CVD,power factor
更新于2025-09-23 15:23:52
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Strain-induced photo-thermoelectric terahertz detection
摘要： We report a design for terahertz (THz) detection by introducing strain to an area of a single-wall carbon nanotube (SWNT) film. The strain is achieved by bending the film around the center, and a large THz response is measured at the two photo-thermoelectric junctions created on the edges of the strained area. We attribute the THz response to an increase in the Seebeck coefficient of the SWNT film with strain, which gives rise to the photo-thermoelectric effect. The enhanced thermal performance is verified on a macroscopic scale using Non-Equilibrium Green's Function approach for SWNT networks.
关键词： photo-thermoelectric effect,strain,carbon nanotubes,Seebeck coefficient,terahertz detection
更新于2025-09-23 15:21:21
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Computational determination of structural, electronic, optical, thermoelectric and thermodynamic properties of hybrid perovskite CH3CH2NH3GeI3: An emerging material for photovoltaic cell
摘要： Owing to high power conversion efficiency and low-cost, methyl-ammonium lead-based halide (viz. CH3NH3PbI3) Perovskites have been emerging as the innovative candidate in the development of optoelectronic devices. However, the toxic lead in these materials is a major hurdle in its commercialization. Thus, there is an urgent need to replace lead with an appropriate element. Ethyl-ammonium based lead-free hybrid halide perovskites may be an alternative photovoltaic (PV) absorber material with appropriate band gap, high stability and non-toxic properties. Herein, we have investigated structural, electronic, optical, thermoelectric and thermodynamic properties of ethyl-ammonium germanium iodide (CH3CH2NH3GeI3 or EAGeI3) by full-potential augmented plane wave (FP-LAPW) method as implemented in the WIEN2k code within the density functional theory (DFT). In this paper, we have found that EAGeI3 has direct band gap of 1.3 eV and high absorption coefficient greater than 104 cm-1 and indicating its suitability as PV absorber material. We have also calculated thermoelectric coefficients as a function of carrier concentration, chemical potential and temperature. The thermodynamic calculations have been done within the quasi-harmonic approximation. As EAGeI3 has been studied first time for PV applications, the present study may open a new vista for more exhaustive experimental and theoretical investigations in search of non-toxic and eco-friendly PV materials.
关键词： absorption coefficient,Seebeck Coefficient,Ethyl-ammonium based hybrid perovskite,figure of merit,band gap
更新于2025-09-23 15:21:01
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Scalable Deposition of Nanomaterial-Based Temperature Sensors for Transparent and Pervasive Electronics
摘要： This work presents a comparative analysis of materials for planar semitransparent thermocouples fabricated by spray deposition on a flexible substrate. Three different materials are employed to build such devices, analyzing also the effect of the spray order in their final performance. The highest Seebeck coefficient (50.4 μV/K) is found for a junction made of carbon nanotubes (CNTs) on top of silver nanowires (AgNWs) whereas its efficiency in terms of power is the lowest because of the higher sheet resistance of the CNTs. In this case, the best combination for energy-harvesting purposes would be poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and AgNWs, with a power factor of 219 fW/K2. These results prove the feasibility of developing large-scale and cost-effective thermocouples that could be used for sensing or energy-harvesting applications.
关键词： spray deposition,thermocouples,PEDOT:PSS,carbon nanotubes,Seebeck coefficient,silver nanowires,energy harvesting
更新于2025-09-23 15:21:01
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Structural and thermoelectric properties of Se doped In <sub/>2</sub> Te <sub/>3</sub> thin films
摘要： The Se-Te based chalcogenides exhibit novel property of Phase Change Memory (PCM) which has potential applications in electrical non-volatile memories. These materials are also suitable in thermal to electrical energy conversions and, hence, of potential interest in energy sustainability as thermoelectric devices. In this study, the Se doped In2Te3 thin films were prepared by thermal evaporation and were annealed at 250 ?C and 300 ?C in Argon gas. The X-ray diffraction spectra show that thermal annealing leads to the phase transitions in Se doped In2Te3 into binary phases of In2Se3 and In2Te3. The surface morphology of the films exhibits the grains of spherical nature. Annealing also decreases the energy band gap due to the presence of two phases. From the four probe and photoconductivity measurements, a large contrast in electrical resistance between the amorphous and crystalline states is found with a variation of a few orders of magnitude. The electrical transport properties such as the electrical resistivity, Seebeck coefficient and the power factor were measured in the temperature range from 300 K to 430 K. All the deposited and annealed thin films exhibit n-type conductivity with the Seebeck coefficient ranging from -338 μVK-1 to -510 μVK-1. An increase in thermoelectric power of 25% is observed in the 300 ?C annealed films in comparison to the as-deposited films. Moreover, the lower Se doped In2(Te0.96Se0.04)3 compound exhibits a better thermoelectric performance compared to the In2(Te0.90Se0.1)3 composition. This study shows the multifunctional nature of Se doped In2Te3 both for PCM and thermoelectric applications.
关键词： power factor,Seebeck coefficient,Phase Change Memory,X-ray diffraction,thermal evaporation,Se-Te based chalcogenides,electrical resistance,thermoelectric devices
更新于2025-09-10 09:29:36
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Direct probing of cross-plane thermal properties of ALD Al <sub/>2</sub> O <sub/>3</sub> /ZnO superlattice films with improved figure of merit and their cross-plane thermoelectric generating performance
摘要： There is a recent interest in semiconducting superlattice films because their low dimensionality can increase the thermal power and phonon scattering at the interface in superlattice films. However, experimental studies in all cross-plane thermoelectric (TE) properties, including thermal conductivity, Seebeck coefficient, and electrical conductivity, has not been performed from these semiconducting superlattice films, because of substantial difficulties in the direct measurement of the Seebeck coefficient and electrical conductivity. Unlike the conventional measurement method, we present technique using a structure of sandwiched superlattice films between two embedded heaters as heating source, and electrodes with two Cu plates, which directly enables the investigation of the Seebeck coefficient and electrical conductivity across the Al2O3/ZnO superlattice films, prepared by atomic layer deposition (ALD) method. Used in combination with the promising cross-plane four-point-probe 3-ω method, our measurements and analysis demonstrate all cross-plane TE properties of Al2O3/ZnO superlattice films in the temperature range from 80 to 500 K. Our experimental methodology and the obtaining results represent a significant advancement in the understating of phonon and electrical transports in nanostructured materials, especially in semiconducting superlattice films in various temperature ranges.
关键词： Thermal conductivity,Cross-plane thermoelectric properties,Seebeck coefficient,Phonon transport,Superlattice films,3-omega measurement,Phonon scattering
更新于2025-09-09 09:28:46
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[IEEE 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Chengdu, China (2018.5.7-2018.5.11)] 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - The Seebeck Coefficient for Disordered Organic Semiconductors
摘要： The Seebeck coefficient is used to describe the transport of carriers and sensitive to the shape of density of state. However, the density of state in organic semiconductors is unclear at present. Some researches incline to apply the Gaussian or exponential density of state. In this paper, we propose an exponential-type density of state with clearly cutting tail at same place. Based on the Miller-Abrahams hopping model, we calculate the variation of initial energy and escape energy for different temperature, analysis the dependence of the conductivity to Seebeck coefficient, and compare the influence of (cid:1) and energetic disorder to the Seebeck coefficient in different temperature by exponential-type DOS (EC DOS) cutting tails at some place.
关键词： density of state,Seebeck coefficient,organic semiconductors,exponential-type DOS,Miller-Abrahams hopping model
更新于2025-09-09 09:28:46
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Bipolar Thermoelectric Effects in Semiconducting Carbon Nanotubes: Description in Terms of One-Dimensional Dirac Electrons
摘要： The thermoelectric effects in semiconducting single-walled carbon nanotubes (SWCNTs) are investigated based on the linear response theory combined with the thermal Green’s function method. It is shown that the electronic states near the lowest conduction band minimum and the highest valence band maximum can be effectively described in terms of one-dimensional (1D) Dirac electrons to which a theoretical scheme is developed to describe the thermoelectric responses making it possible to study the effects of inter-band impurity scattering and in-gap states. Using the proposed scheme, the bipolar thermoelectric effects (i.e., the sign inversion of the Seebeck coefficient) in semiconducting SWCNTs observed in recent experiments are explained. Moreover, the temperature dependence of the Seebeck coefficient of semiconducting SWCNTs at low temperature is clarified.
关键词： thermal Green’s function method,Seebeck coefficient,linear response theory,Dirac electrons,semiconducting single-walled carbon nanotubes,thermoelectric effects
更新于2025-09-04 15:30:14