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Highly sensitive and selective room-temperature NO2 gas-sensing characteristics of SnOX-based p-type thin-film transistor
摘要： The high-performance p-type metal-oxide-semiconductor (MOS)-based gas sensor is an important subject of research in the field of gas-sensing technology. In this work, we demonstrated a p-type MOS-based thin-film transistor (TFT) nitrogen dioxide (NO2) gas sensor that used tin oxide (SnOX) for both the channel and sensing layers. The crystalline status, surface morphology, and atomic-bonding configuration of the thin-film were examined using X-ray diffraction, field emission-scanning electron microscopy, and X-ray photoelectron spectroscopy. The results indicated that the deposited thin-film was mainly composed of polycrystalline SnO with a tetragonal structure. The fabricated p-type SnOX TFT showed a maximum response value of 19.4-10 ppm NO2 at room temperature (RT, 25 °C) when operated in the subthreshold region, which was significantly higher than that of 2.8–10 ppm NO2 obtained from a p-type SnOX thin-film chemiresistor at RT. In addition, the SnOX TFT gas sensor showed significantly higher sensitivity to NO2 gas than to other target gases such as NH3, H2S, CO2, and CO at RT. To the best of our knowledge, this is the first study to a p-type MOS-based field-effect transistor-type gas sensor. Our experimental results demonstrate that the p-type SnOX TFT is a promising gas sensor that can operate at RT with high sensitivity and selectivity to NO2 gas.
关键词： SnO,Thin-film transistor,NO2 gas sensing,SnOX,P-type metal oxide semiconductor
更新于2025-11-21 11:01:37
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Pyrene-SH functionalized OTFT for detection of Hg2+ ions in aquatic environments
摘要： Mercury ion (Hg2+) sensor based on bottom gate top contact organic thin film transistor (OTFT) was fabricated. The OTFT channel area was functionalized with pyrene that contain thiol group, which has strong binding affinity toward Hg2+ ion. The OTFT sensor exhibited a charge mobility of 0.28 cm2 V–1 s–1, a threshold voltage of -22.3 V and on-to-off ratio 103. The sensor shows high selectivity to Hg2+ ion over other two valence metal ions. OTFT sensor exhibited high sensitivity to Hg2+ ion, indicated by increasing of drain current after exposed to different concentration of Hg2+ ion ranging from 1 mM to 0.01 μM. Moreover, the OTFT sensor capability for practical application was also demonstrated by sensing the present of 25 μM of Hg2+ ion in tap, drinking and seawater samples.
关键词： Mercury sensor,Pyrene derivative,Organic thin film transistor
更新于2025-11-14 17:28:48
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Reduction of Bias and Light Instability of Mixed Oxide Thin-Film Transistors
摘要： Despite their potential use as pixel-switching elements in displays, the bias and light instability of mixed oxide semiconductor thin-film transistors (TFTs) still limit their application to commercial products. Lack of reproducible results due to the sensitivity of the mixed oxides to air exposure and chemical contamination during or after fabrication hinders any progress towards the achievement of stable performance. Consequently, one finds in literature several theories and mechanisms, all justified, but most of them conflict despite being on the same subject matter. In this study, we show that under an optimized fabrication process, which involves the in situ passivation of a mixed oxide semiconductor, we can reduce the bias and light instability of the mixed-oxide semiconductor TFTs by decreasing the semiconductor thickness. We achieve a negligible threshold voltage shift under negative bias combined with light illumination stress when the mixed oxide semiconductor thickness is around three nanometers. The improvement of stability in the thin mixed-oxide semiconductor TFTs is due to a reduced number of oxygen-vacancy defects in the bulk of the semiconductor, as their total number decreases with decreasing thickness. Under the optimized fabrication process, bulk, rather than interfacial defects, thus seem to be the main source of the bias and light instability in mixed oxide TFTs.
关键词： oxide,stability,thin film transistor
更新于2025-11-14 17:28:48
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Stepped Annealed Inkjet-Printed InGaZnO Thin-Film Transistors
摘要： The preparation of thin-film transistors (TFTs) using ink-jet printing technology can reduce the complexity and material wastage of traditional TFT fabrication technologies. We prepared channel inks suitable for printing with different molar ratios of their constituent elements. Through the spin-coated and etching method, two different types of TFTs designated as depletion and enhancement mode were obtained simply by controlling the molar ratios of the InGaZnO channel elements. To overcome the problem of patterned films being prone to fracture during high-temperature annealing, a stepped annealing method is proposed to remove organic molecules from the channel layer and to improve the properties of the patterned films. The different interfaces between the insulation layers, channel layers, and drain/source electrodes were processed by argon plasma. This was done to improve the printing accuracy of the patterned InGaZnO channel layers, drain, and source electrodes, as well as to optimize the printing thickness of channel layers, reduce the defect density, and, ultimately, enhance the electrical performance of printed TFT devices.
关键词： thin-film transistor,annealing,plasma treatment,ink-jet printing
更新于2025-10-24 16:37:46
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Percolation Effects in Electrolytically-Gated WS <sub/>2</sub> /Graphene Nano:Nano Composites
摘要： Mixed networks of conducting and non-conducting nanoparticles show promise in a range of applications where fast charge transport is important. While the dependence of network conductivity on the conductive mass fraction (Mf) is well understood, little is known about the Mf-dependence of mobility and carrier density. This is particularly important as the addition of graphene might lead to increases in the mobility of semiconducting nanosheet-network transistors. Here, we use electrolytic gating to investigate the transport properties of spray-coated composite networks of graphene and WS2 nanosheets. As the graphene Mf is increased, we find both conductivity and carrier density to increase in line with percolation theory with percolation thresholds (~8 vol%) and exponents (~2.5) consistent with previous reporting. Perhaps surprisingly, we find the mobility increases modestly from ~0.1 cm2/Vs (for a WS2 network) to ~0.3 cm2/Vs (for a graphene network) which we attribute to the similarity between WS2-WS2 and graphene-graphene junction resistances. In addition, we find both the transistor on- and off-currents to scale with Mf according to percolation theory, changing sharply at the percolation threshold. Through fitting, we show that only the current in the WS2 network changes significantly upon gating. As a result, the on-off ratio falls sharply at the percolation threshold from ~104 to ~2 at higher Mf. Reflecting on these results, we conclude that the addition of graphene to a semiconducting network is not a viable strategy to improve transistor performance as it reduces the on:off ratio far more than it improves the mobility.
关键词： graphene,ionic liquid,thin film transistor,WS2,carrier density,composite,mobility,Printed electronics
更新于2025-10-22 19:40:53
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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Analysis of 1/f Noise for Organic TFTs Considering Mobility Power-Law Parameter
摘要： Based on carrier number fluctuation model, 1/f noise is analyzed for organic thin-film transistors (TFTs) at low drain voltage. The carrier mobility is gate-voltage-dependent, and is described by a power-law function. The mobility power-law parameter α determines the relationship between drain current noise power spectral density (PSD) SIDS and drain current IDS, and it is found that SIDS /I 2 DS when α = 1. It is different from the well-known rule for the MOSFETs with the constant carrier mobility: When SIDS /I 2 DS , Hooge’s mobility fluctuation model dominates the 1/f noise.
关键词： carrier mobility,Thin-film transistor (TFT),analytical model,low frequency noise
更新于2025-09-23 15:23:52
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Critical impact of gate dielectric interfaces on the trap states and cumulative charge of high-performance organic thin field transistors
摘要： In the operation of OFETs, the electrical properties are strongly dependent on the merits of the constituting layers and the formed interfaces. Here we study the trap states variations at the interface between the organic semiconductor pentacene and polymer insulators. With ZrO2 dielectric modified by polymers and find a 10 × decrease in the density of trap states at the semiconductor/insulator interface, bring about the charge carrier mobility increase from 0.058 cm2/Vs to 0.335 cm2/Vs. In addition, when compare to the thicker films at the same applied gate voltage, the thinner film would lead to enhanced coupling capability and more charges cumulative cumulated at the channel region, which is pivotal for optimizing the performance of OFETs. The results prove that the property of the insulator layer could impact largely on the device performance.
关键词： Organic thin film transistor,Cumulative charge,Insulator/semiconductor interface,Trap states
更新于2025-09-23 15:23:52
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Highly conductive, transparent and metal-free electrodes with a PEDOT:PSS/SWNT bilayer for high-performance organic thin film transistors
摘要： Conductive organic materials including polymers, small molecules, and carbon nanotubes (CNTs) are a promising alternative to inorganic materials in electronic devices. Conventionally, organic electrodes employing CNTs are designed using functionalization of their surfaces or formation of nanocomposites with a conductive polymer. However, phase separation limits the concentration of CNTs in a polymer matrix, hindering the formation of highly dense CNT networks and leading to poor electrical conductivity. In this paper, we introduce bilayer electrodes comprising poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and single-walled CNTs (SWNTs) chemically modified by HNO3 treatment. Impressive conductivities of 2432 and 2438 S cm?1 are found for the SWNT/PEDOT:PSS (S/P) and PEDOT:PSS/SWNT (P/S) electrodes, respectively. Further, an increase in the work function of the electrodes after HNO3 treatment lowers the hole injection barrier, which facilitates hole injection from pentacene. The smooth surface of PEDOT:PSS also contributes to growth of large pentacene grains; consequently, the field-effect mobility of pentacene-based thin film transistors is 1.88 cm2 V?1 s?1 when the P/S electrode is employed. The metal-free electrodes also exhibit a high optical transparency of 88.7%, which suggests that they have great potential for applications in optoelectronics.
关键词： Electrode,PEDOT:PSS,Carbon nanotube,Pentacene,Thin film transistor
更新于2025-09-23 15:23:52
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Hybrid bilayer gate dielectric-based organic thin film transistors
摘要： Organic thin film transistors (OTFTs) are key building blocks for flexible, low cost electronics systems. They provide a viable alternative for silicon-based electronics with added advantages of low cost and flexibility. However, few issues like high-operating voltage, low-switching speed, high-leakage current and reliability are still a challenge. The overall performance of an OTFT depends on organic semiconductors and gate dielectric interface. In this paper, we review the current status and trends in the choice of dielectric layer for OTFTs. As a starting point, the performance parameters of an OTFT and their dependence on the dielectric layer are briefly discussed. A variety of dielectric materials which includes high-k inorganic, organic, surface coated inorganics and nanocomposites are also presented. The advantages and drawbacks of each of these materials are discussed in detail. We reviewed the latest developments in the dielectric materials especially, self-assembled monolayers (SAMs), hybrid bilayers and nanocomposites. SAM-based OTFTs offer several advantages but shift in the threshold voltage remains a concern. Nanocomposites are a latest addition to the dielectric materials, which offer advantages like solution processing and improved dielectric constant but have a rough surface. A hybrid bilayer that incorporates the inorganic dielectric as a base layer and a thin polymer layer over it to improve the surface properties offers several desirable characteristics over the other choices. Hence, we propose that hybrid bilayer gate dielectrics shall play a pivotal role in improving the OTFT performance.
关键词： low-k organic,high-k inorganic,Organic thin film transistor,self-assembled monolayer,gate dielectric,hybrid bilayer
更新于2025-09-23 15:23:52
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Nano-rheology printing of sub-0.2 <i>μ</i> m channel length oxide thin-film transistors
摘要： Down-scaling of the channel length of a fully solution-processed oxide thin-film transistor (TFT) to the nanometer-scale is the key to accessing next-generation devices for Internet-of-Things technology. In this work, we report on the fabrication of an oxide TFT with a channel length of 160 nm, which is far less than those obtained by the current direct-printing techniques, by a newly developed nano-rheology printing (nRP) method. The device had an on/off current ratio, subthreshold voltage, hysteresis, and field-effect mobility of approximately 107, 1.7 V, 0 V, and 0.16 cm2 V s-1, respectively. The key to achieving the sub-micron channel printed TFT is the introduction of a new amorphous La–Ru–O material, which exhibits relatively good conductivity and excellent nRP properties at the nanoscale, for source/drain electrode patterns. Such a short-channel TFT would never be achieved with conventional printing methods, and hence, this approach is highly important for accessing next-generation low-cost, large-area and environmentally friendly printed electronics.
关键词： nano-rheology printing,thermal-imprinting,printed electronics,solution process,oxide thin-film transistor
更新于2025-09-23 15:23:52