1：Experimental Design and Method Selection:

The study designed a p-type SnOX thin-film transistor (TFT) gas sensor with a bottom-gate configuration to enhance sensitivity by amplifying signals through gate voltage modulation. The SnOX thin-film was deposited using radio frequency (RF) sputtering and characterized for crystalline structure, morphology, and atomic bonding.

2：Sample Selection and Data Sources:

The SnOX thin-films were fabricated on highly-doped n-type silicon substrates with a 40-nm-thick SiO2 gate dielectric. Samples were prepared under specific sputtering conditions and annealed.

3：List of Experimental Equipment and Materials:

Equipment included RF sputtering system, rapid thermal annealer, electron-beam evaporator, semiconductor parameter analyzer (Agilent 4156C), X-ray diffractometer (Bruker D8 Advance), field emission-scanning electron microscopy (Zeiss Sigma), X-ray photoelectron spectrometer (Thermo Scientific K-Alpha), and a gas-sensing system with chamber probe station. Materials included metallic Sn target (99.999% purity), Ni for electrodes, and various gases (NO2, NH3, H2S, CO2, CO).

4：999% purity), Ni for electrodes, and various gases (NO2, NH3, H2S, CO2, CO). Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Fabrication involved depositing SnOX active layer via RF sputtering, annealing, and patterning electrodes. Gas-sensing measurements were conducted at temperatures from RT to 100°C, with responses calculated based on resistance changes in air and target gases. Humidity effects were tested by adjusting relative humidity.

5：Data Analysis Methods:

Responses were quantified using defined equations for oxidizing and reducing gases. Parameters like response time and recovery time were measured, and data were analyzed to compare sensitivity and selectivity.