- 标题
- 摘要
- 关键词
- 实验方案
- 产品
过滤筛选
- 2018
- thin-film transistors
- N2O plasma treatment.
- amorphous InGaZnO
- gate-bias stress
- stability
- Electronic Science and Technology
- Peking University
-
Mobility Enhancement in Polycrystalline Silicon Thin Film Transistors due to the Dehydrogenation Mechanism
摘要： We investigated the mechanism of mobility enhancement after the dehydrogenation process in polycrystalline silicon (poly-Si) thin films. The dehydrogenation process was performed by using an in-situ CVD chamber in a N2 ambient or an ex-situ furnace in air ambient. We observed that the dehydrogenated poly-Si in a N2 ambient had a lower oxygen concentration than the dehydrogenated poly-Si annealed in an air ambient. The in-situ dehydrogenation increased the (111) preferred orientation of poly-Si and reduced the oxygen concentration in poly-Si thin films, leading to a reduction of the trap density near the valence band. This phenomenon gave rise to an increase of the field-effect mobility of the poly-Si thin film transistor.
关键词： Low-temperature poly silicon,Crystallization,Dehydrogenation,Thin film transistor
更新于2025-09-04 15:30:14
-
Exploiting In Situ Redox and Diffusion of Molybdenum to Enable Thin-Film Circuitry for Low-Cost Wireless Energy Harvesting
摘要： Direct additive fabrication of thin-film electronics using a high-mobility, wide-bandgap amorphous oxide semiconductor (AOS) can pave the way for integration of efficient power circuits with digital electronics. For power rectifiers, vertical thin-film diodes (V-TFDs) offer superior efficiency and higher frequency operation compared to lateral thin-film transistors (TFTs). However, the AOS V-TFDs reported so far require additional fabrication steps and generally suffer from low voltage handling capability. Here, these challenges are overcome by exploiting in situ reactions of molybdenum (Mo) during the solution-process deposition of amorphous zinc tin oxide film. The oxidation of Mo forms the rectifying contact of the V-TFD, while the simultaneous diffusion of Mo increases the diode’s voltage range of operation. The resulting V-TFDs are demonstrated in a full-wave rectifier for wireless energy harvesting from a commercial radio-frequency identification reader. Finally, by using the same Mo film for V-TFD rectifying contacts and TFT gate electrodes, this process allows simultaneous fabrication of both devices without any additional steps. The integration of TFTs alongside V-TFDs opens a new fabrication route for future low-cost and large-area thin-film circuitry with embedded power management.
关键词： additive fabrication,amorphous oxide semiconductors,thin-film circuitry,large-area electronics,solution process
更新于2025-09-04 15:30:14
-
Fabrication of Metal–Organic Framework Thin Films Using Programmed Layer‐by‐Layer Assembly Techniques
摘要： Metal–organic frameworks (MOFs) are a rather new class of crystalline, nanoporous solids that are self-assembled from inorganic, metal or metal-oxo nodes and organic linkers. Powder MOFs are originally developed for gas storage and catalyst applications, but more recently, more advanced applications have used well-defined MOF thin films in electronic, photonic, and sensing devices. MOF thin films for targeted applications can be fabricated on appropriately functionalized substrates using a programmed layer-by-layer (LbL) assembly technique, which yields oriented, highly crystalline MOF thin films (surface-mounted MOFs, SURMOFs). The LbL assembly technique as well as the huge potential of SURMOFs is presented herein. Emerging SURMOF properties related to their heteroepitaxy, postsynthetic modification/crosslinking, lithography, and photoswitching are highlighted.
关键词： lithography,photoswitching,MOF thin film,layer-by-layer assembly,heteroepitaxy
更新于2025-09-04 15:30:14
-
Tailoring chemical and physical properties of graphene-added DNA hybrid thin films
摘要： While the characteristics of DNA and graphene are well studied, the chemical and physical properties of graphene-embedded DNA and cetyltrimethyl-ammonium chloride-modified DNA (CT-DNA) hybrid thin films (HTFs) have been rarely discussed due to the limited development of fabrication methodologies. Herein, we developed a simple drop-casting method for constructing DNA and CT-DNA HTFs added with graphene nanopowder (GNP). Additionally, we demonstrated their distinct characteristics, such as their structure, elemental composition, spin states and chemical functional groups, binding interactions, vibration/stretching modes, UV-Vis absorption, PL, and electrical properties. The EDS spectra of GNP-added DNA HTFs showed C, N, O, Na, and P peaks at characteristic energies. Because of the physical adsorption of GNP on DNA, the peak shifts and suppression of the core spectra of O 1s and P 2p were observed by XPS. The intensity variation of Raman and FTIR bands indicated hybrid formation of GNP in DNA and CT-DNA through adsorption, electrostatic interaction, and π–π stacking. UV-Vis absorption and PL spectra showed the considerable influence of GNP in DNA and CT-DNA HTFs. DNA and CT-DNA HTFs with relatively higher [GNP] showed significant increases of current due to the formation of interconnected networks of GNP in the DNA and CT-DNA HTFs.
关键词： spectroscopy,DNA,electrical property,hybrid thin film,graphene
更新于2025-09-04 15:30:14
-
Transparent Thin Film Solid-state Lithium Ion Batteries
摘要： Transparent electrochemical energy storage devices have attracted extensive attention for the power supply of next-generation transparent electronics. In this paper, semi-transparent thin film batteries (TFBs) with a grid-structured design have been fabricated on glass substrates using specific photolithography and etching processes in order to achieve LiCoO2/LiPON/Si structures below human eye resolution. UV-vis transmittance up to 60% have been measured for the obtained TFBs. Discharge capacity as high as 0.15 mAh has been recorded upon galvanostatic cycling at C/2 rate within 4.2-3 V voltage range for the highest transmittances. The capacity variation trend exhibits an initial phase of a gradual decrease with an average capacity loss of 0.15% per cycle, and thereafter a second phase with almost stable capacity. Particular attention has been given to the effects of architecture parameters on the TFB optical and electrochemical properties. To the best of our knowledge, this work is the first demonstration of transparent, all inorganic, thin film lithium-ion batteries. While reported studies are limited to battery structures involving liquid or polymer materials, our devices will contribute to improve form factor freedom, extend operating ranges, enhance long-term stability, and will be relevant to the integration into various optoelectronic devices.
关键词： solid state,LiPON,thin film,microfabrication,transparent battery
更新于2025-09-04 15:30:14
-
Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors
摘要： While it is known that the charge-carrier mobility in amorphous metal oxide semiconductor thin ?lm transistors (TFT) deviates from Arrhenius temperature dependence, we found that the Hall mobility measured in amorphous In-Ga-Zn-O (a-IGZO) follows an Arrhenius relation surprisingly well. We explain these observations by the effect of strong vertical electric ?eld created by the gate voltage, which facilitates direct tunneling of trapped carriers into the conductive band and leads to virtually temperature independent mobility. We present a generalized Arrhenius model based on the effective temperature concept. We show that our model allows quantitative description of the temperature dependence of the mobility in a-IGZO TFTs over a broad temperature range.
关键词： charge transport,thin film transistors,Arrhenius relation,amorphous oxide semiconductor,electric field
更新于2025-09-04 15:30:14
-
Optical bonding of tellurite glass film on silicate glass
摘要： Tellurite glass thin film was successfully bonded on a silicate glass substrate by the direct bonding (DB) method. Glass film (thickness 1-3 μm) was fabricated by the glass blowing technique and the DB process was performed at room temperature at relative humidity (RH) of 62% or 15%. The surface adhesive strengths of the glass films bonded at 15% and 62% RH were measured as 250 and 96 mJ/m2 respectively by the Obreimoff-Metsik method. The hydroxyl (-OH) functional groups on the interface between the film and silicate glass were analyzed by Fourier transform infrared spectroscopy. The major bonding forces between the tellurite thin film and silicate glass were hydrogen bonds at 62% RH and bonds between Te on the tellurite glass and O on the silicate glass were concerned at 15% RH. These forces, contributed by Si-OH, were important for bond formation at 62%. The large amounts of water and OH groups on the silicate glass, determined by thermogravimetric analysis, indicated a weaker bonding process at 62% RH. This work will contribute toward reliable, high-integrity components for integrated optical circuits, which are increasingly needed for high-throughput data transfer.
关键词： glass thin film,tellurite glass,hydroxyl group,adhesive strength,direct bonding
更新于2025-09-04 15:30:14