研究目的
Investigating the effect of electric field on charge transport in amorphous In-Ga-Zn-O (a-IGZO) thin film transistors and proposing a generalized Arrhenius model based on the effective temperature concept.
研究成果
The study demonstrates that the gate-voltage-induced direct tunneling of localized charge carriers to the conduction band dominates the charge transport in the low temperature regime, leading to virtually temperature-independent mobility. A generalized Arrhenius relation based on the effective temperature concept provides a unified theoretical description of the mobility temperature dependence for both high and low temperature transport regimes.
研究不足
The theoretical model is applicable at not too high temperatures and at sufficiently large density of localized states. It does not account for the band-like transport regime at high temperatures or relatively small density of the localized tail states.
