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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Analysis of the Value Proposition of High-efficiency, Multijunction Solar Modules for Residential Rooftop Installations
摘要： We report for the ?rst time on the impact of a printed indium tin oxide (ITO) layer inserted between a printed silver conductor and solution processed zinc oxide (ZnO) leading to an optimized semiconductor/contact scheme for full print integration. Introducing the ITO interlayer, the contact resistance is reduced by two orders of magnitude. Nanoparticle thin-?lm transistors (TFTs) in this Ag/ITO contact con?guration show improved saturation mobility of 0.53 cm V s with respect to 0.08 cm V s without ITO interlayer. The contact improvement can be attributed to either an increased charge carrier concentration or a reduction of band offsets at the ZnO/electrode interface.
关键词： indium–tin–oxide,zinc oxide (ZnO),thin-?lm transistors (TFTs),Contact resistance
更新于2025-09-23 15:19:57
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Enhanced device performance with passivation of the TiO <sub/>2</sub> surface using a carboxylic acid fullerene monolayer for a SnPb perovskite solar cell with a normal planar structure.
摘要： Research on tin-lead (SnPb) perovskite solar cells (PSCs) have gained popularity in recent years due to their low bandgap which could be applied to tandem solar cells. However, most of the work are based on inverted PSCs using PEDOT:PSS as the hole transport layer as the normal structure PSCs show lower efficiency. In this work, the reason behind the low efficiency of normal structure SnPb PSCs is elucidated and the method to overcome the problem has been attempted through surface passivation. In the case of normal PSCs, at the interface between titania layer and SnPb perovskite there are many carrier traps observed originating from Ti-O-Sn bonds. In order to avoid the direct contact between titania and SnPb perovskite layer, the titania surface is passivated with carboxylic acid C60 resulting in efficiency increase from 5.14 % to 7.91 %. This will provide a direction of enhancing the efficiency of normal structure SnPb PSCs through heterojunction engineering.
关键词： passivation,Perovskite solar cells,Tin,titania,Lead,trap density,interface
更新于2025-09-23 15:19:57
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Largea??Scale Plasmonic Hybrid Framework with Builta??In Nanohole Array as Multifunctional Optical Sensing Platforms
摘要： Light coupling with patterned subwavelength hole arrays induces enhanced transmission supported by the strong surface plasmon mode. In this work, a nanostructured plasmonic framework with vertically built-in nanohole arrays at deep-subwavelength scale (6 nm) is demonstrated using a two-step fabrication method. The nanohole arrays are formed first by the growth of a high-quality two-phase (i.e., Au–TiN) vertically aligned nanocomposite template, followed by selective wet-etching of the metal (Au). Such a plasmonic nanohole film owns high epitaxial quality with large surface coverage and the structure can be tailored as either fully etched or half-way etched nanoholes via careful control of the etching process. The chemically inert and plasmonic TiN plays a role in maintaining sharp hole boundary and preventing lattice distortion. Optical properties such as enhanced transmittance and anisotropic dielectric function in the visible regime are demonstrated. Numerical simulation suggests an extended surface plasmon mode and strong field enhancement at the hole edges. Two demonstrations, including the enhanced and modulated photoluminescence by surface coupling with 2D perovskite nanoplates and the refractive index sensing by infiltrating immersion liquids, suggest the great potential of such plasmonic nanohole array for reusable surface plasmon-enhanced sensing applications.
关键词： modulated photoluminescence (PL),refractive index (RI) sensing,titanium nitride (TiN),surface plasmons (SPs),plasmonic nanoholes (NHs)
更新于2025-09-23 15:19:57
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Highly Air-Stable Tin-Based Perovskite Solar Cells through Grain-Surface Protection by Gallic Acid
摘要： Maintaining the stability of tin halide perovskites is a major challenge in developing lead-free perovskite solar cells (PSCs). Adding extra SnX2 (X=F, Cl, Br) in the precursor solution to inhibit Sn2+ oxidation is an essential strategy to improve the device efficiency and stability. However, SnX2 on the surface of perovskite grains tends to prohibit charge transfer across perovskite films. Here, we report a coadditive engineering approach by introducing antioxidant gallic acid (GA) together with SnCl2 to improve the performance of tin–based PSCs. The SnCl2–GA complex can not only protect the perovskite grains but also more effectively conduct electrons across it, leading to highly stable and efficient PSCs. The unencapsulated devices can maintain ~ 80% of its initial efficiency after 1000 h storage in ambient air with a relative humidity of 20%, which is the best air stability that can be achieved in tin-based PSCs until now.
关键词： air stability,coadditive engineering,tin-based perovskite solar cells,SnCl2–GA complex,gallic acid
更新于2025-09-23 15:19:57
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Enhanced performance of tin halide perovskite solar cells by addition of hydrazine monohydrobromide
摘要： Although tin-based perovskite has been considered as a kind of potential environmentally-friendly photovoltaic materials, the tin-based perovskite solar cells are limited due to their poor stability and low conversion efficiency mainly tracing to the oxidation from Sn2t state in tin-based perovskite films. Herein, a facile reductive approach is developed to suppress the oxidation, in which tiny amount of hydrazine monohydrobromide is doped into FASnI3-based perovskite precursor solution as a reducing agent. Our results demonstrate that the addition of hydrazine monohydrobromide could reduce the defects and trap states in perovskite by inhibiting formation of tetravalent tin, and increase the open circuit voltage by widening the bandgap of perovskite. As a consequence, the best optimized perovskite solar cell achieves an excellent power conversion efficiency of 7.81%, which represented a 39.5% improvement compared to the best reference device. The optimized devices display stabilized power output near the maximum power point and negligible hysteresis effect.
关键词： Trap states,Defect,Hydrazine monohydrobromide,Lead-free,Tin-based perovskite solar cell
更新于2025-09-23 15:19:57
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Highly Reproducible and Efficient FASnI <sub/>3</sub> Perovskite Solar Cells Fabricated with Volatilizable Reducing Solvent
摘要： Lead-free tin halide perovskite solar cells (PSCs) have attracted great attention because of their low toxicity, ideal band gap, and high carrier mobilities. However, the efficiency and reproducibility of tin halide PSCs has been limited because of the facile oxidation of Sn2+ to Sn4+. Herein, liquid formic acid (LFA) was introduced as a reducing solvent in the FASnI3 (FA: formamidinium) perovskite precursor solution. Unlike solid reducing additives, the LFA solvent is volatile, so no residual LFA remained in the FASnI3 perovskite film. Use of the LFA solvent resulted in production of the FASnI3 perovskite film with high crystallinity, low Sn4+ content, reduced background doping, and low electronic trap density. As a result, an efficiency of over 10% was obtained for lead-free tin halide PSCs with improved reproducibility.
关键词： tin,Lead-free,oxidation,trap density,standard reduction potential
更新于2025-09-23 15:19:57
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Comparison study of temperature dependent direct/indirect bandgap emissions of Ge1-x-ySixSny and Ge1-ySny grown on Ge buffered Si
摘要： Temperature-dependent photoluminescence (PL) of two sets of ternary samples with fixed tin concentrations of ~5.2% (Ge0.924Si0.024Sn0.052, and Ge0.911Si0.036Sn0.053) and ~7.3% (Ge0.90Si0.027Sn0.073, and Ge0.888Si0.04Sn0.072) were measured along with their binary counterparts (Ge0.948Sn0.052 and Ge0.925Sn0.075). The variations of direct bandgap emission (ED) and indirect bandgap emission (EID) with temperature were studied for both ternary and binary alloys by means of Gaussian curve fitting, and the results are compared. The bandgap widths of ternaries clearly increase after Si incorporation into the GeSn with similar Sn concentrations. It is found that for the ternaries both ED and EID peak energies are blue shifted, and the energy separation of ED and EID peaks becomes larger than that of binaries for similar Sn concentrations. Moreover, both ED and EID peaks appear at room temperature (RT) in the GeSiSn spectra, but the ED peak position is greater than EID, indicating these ternaries are indirect bandgap materials. Low temperature PL validates the existence of indirect PL emission in Ge0.90Si0.027Sn0.073 and direct gap behavior in Ge0.925Sn0.075, indicating GeSn becomes a direct bandgap material at lower Sn concentration than GeSiSn. The PL intensities of these ternaries are generally weaker and the spectra become more complicated than those of binaries, probably due to increased strain and defects in the ternaries. Finally, it is found that the effect of large differences in strain of ternary samples on PL peak positions can be greater than that of small Si composition differences in ternaries. A large compressive strain in ternaries can also make splitting of the ED into ED,HH (conduction band minimum-Γ valley to heavy hole maximum) and ED,LH (conduction band minimum-Γ valley to light hole maximum) transitions more observable in the PL spectra.
关键词： strain,germanium tin,photoluminescence,direct/indirect bandgap emissions,valence band splitting,germanium silicon tin
更新于2025-09-19 17:15:36
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Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications
摘要： The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec?1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.
关键词： tin oxide,thin-film transistor,aluminum doping,adhesive property,oxide semiconductor
更新于2025-09-19 17:15:36
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Solution-processed ultrathin SnS <sub/>2</sub> -Pt nanoplates for photoelectrochemical water oxidation
摘要： Tin disulfide (SnS2) is attracting significant interest due to the abundance of its elements and its excellent optoelectronic properties in part related to its layered structure. In this work, we detail the preparation of ultrathin SnS2 nanoplates (NPLs) through a hot-injection solution-based process. Subsequently, Pt was grown on their surface via in-situ reduction of a Pt salt. The photoelectrochemical (PEC) performance of such nanoheterostructures as photoanode toward water oxidation was afterward tested. Optimized SnS2-Pt photoanodes provided significantly higher photocurrent densities than bare SnS2 and SnS2-based photoanodes previously reported. Mott-Schottky analysis and PEC impedance spectroscopy (PEIS) were used to analyze in more detail the effect of Pt on the PEC performance. From these analyses, we attribute the enhanced activity of the SnS2-Pt photoanodes here reported to a combination of the very thin SnS2 NPLs and the proper electronic contact between Pt nanoparticles (NPs) and SnS2.
关键词： photoanode,Tin disulfide,SnS2-Pt heterostructure,two-dimensional material,photoelectrochemical water oxidation
更新于2025-09-19 17:15:36
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Facile and <i>in-situ</i> spray deposition of SnO <sub/>2</sub> – reduced graphene oxide heterostructure sensor devices
摘要： A facile and economic solution based technique is developed for the deposition of SnO2 – Reduced Graphene Oxide (RGO) heterostructure thin films. The single step deposition process leads to uniformly coated films of SnO2 nanocrystallites on well exfoliated RGO sheets as confirmed by xray diffraction, Raman spectroscopy and transmission electron microscopy investigations. The response to NO2 gas at room temperature (25 oC) is studied. The interface between n-type SnO2 and p-type RGO flakes forms a hetrostrcuture barrier, which enhances the native sensitivity of pristine RGO towards toxic gases like NO2. The technique allows controlling the density of SnO2 nanoparticles (~3 nm in size) attached to the RGO flakes and thereby enhancing the response of the heterostructure sensor device. The highest SnO2 loading shows a 14 fold increase in response to 200 ppm of NO2 and a response time as low as 5 sec compared to that of ~200 sec for bare RGO films.
关键词： tin oxide,thin films,Reduced graphene Oxide,heterostructure,NO2 sensing
更新于2025-09-19 17:15:36