- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Boron-doped graphene synthesis by pulsed laser co-deposition of carbon and boron
摘要： Incorporating dopants, such as boron, in graphene, is crucial for many applications in electrochemistry, sensors, photovoltaics, and catalysis. Many routes have been investigated for the preparation of B-doped graphene (BG) films, including chemical processes. A different way to obtain boron-doped layers to better control the concentration of boron in the doped graphene film, is pulsed laser co-ablation of C and B solid sources followed by rapid thermal heating of the B-doped carbon film deposited on a metal catalyst. Amorphous a-C:B films, containing 2%at. boron, are synthetized by pulse laser deposition onto a nickel film catalyst. Rapid thermal annealing at 1100°C leads to the formation of boron-doped graphene films, characterized by Raman, XPS, FEG-SEM, HRTEM and AFM. The results confirm the production of 1-4 layer boron doped graphene films, with a similar 2 at.% boron concentration to that of the a-C:B used as the graphene solid precursor. Boron doping does not modify the nano-architecture of graphene, but increases the concentration of defects in the films. Our results pave a new way for boron doped graphene synthesis using laser processing in a controlled and reproducible way, in particular to achieve designed electrical and chemical properties in various electronic and electrochemical applications.
关键词： Raman spectroscopy,Boron-doped graphene,Pulsed laser deposition,Rapid thermal annealing,HRTEM,XPS,AFM
更新于2025-09-23 15:19:57
-
Preparation of highly thermally conductive and electrically insulating PI/BNNSs nanocomposites by hot-pressing self-assembled PI/BNNSs microspheres
摘要： Traditional polymer-based thermally conductive composites with randomly distributed fillers always yield an undesired heat removal due to the lack of efficient heat transfer pathways. Thus, realization of rational and ordered distribution of thermally conductive nanofillers in polymer matrix is believed to be significant for obtaining a desirable thermal conductivity. Herein, a series of thermally conductive polyimide/boron nitride nanosheets (PI/BNNSs) composites with a highly ordered BNNSs network have been successfully prepared. For achieving an uniform dispersion and high orientation of BN nanosheets in PI matrix, self-assembled PI/BNNSs complex microspheres were firstly prepared via the van der Waals interaction, and then these complex microspheres were further hot-pressed at the Tg of PI matrix, which rendered the alignment of BNNSs during the deformation of complex microspheres and built an efficient heat transfer pathway. As a consequence, the resultant composites possess a much higher in-plane thermal conductivity up to 4.25 W/mK with 12.4 vol% oriented BNNSs than those of pure PI and random distribution composite (0.85 W/mK for pure PI and 1.3 W/mK for the PI/random BNNSs-12.4). Meanwhile, these nanocomposites present excellent electrically insulating properties, improved dimensional stabilities and good thermal stabilities. This facile method provides a new way to design and fabricate highly thermally conductive PI-based composites for applying in heat dissipation of modern portable and collapsible electronic devices.
关键词： Boron nitride nanosheets,Polyimide,Complex microspheres,Hot-pressing,Filler orientation
更新于2025-09-23 15:19:57
-
Excitonically Coupled Cyclic BF2 Arrays of Calix[8]a?? and Calix[16]phyrin as Neara??IRa?? Chromophores
摘要： A pair of giant calix[n]phyrin derivatives namely calix[8]- (4) and calix[16]phyrin (5), involving two and four BF2 units, respectively, were prepared via the condensation of the bis-naphthobipyrrolylmethene-BF2 complex with pentafluorobenzaldehyde. Both systems and precursor 3 were fully characterized, including via single crystal X-ray diffraction analyses. Calix[n]phyrins 4 and 5 display extremely high extinction coefficients (3.67 and 4.82 105 M-1cm-1, respectively) in the near-IR region. This observation was taken as initial evidence for strong excitonic coupling within these cyclic multi-chromophoric systems. Detailed insights into the effect of excitonic coupling dynamics on the electronic structure and photophysical properties of the macrocycles came from theoretical studies. Taken in concert this combination of theory and experiment served to confirm that the coupling between the excitons depends on the specifics of the calix[n]phyrin structure, not just its size.
关键词： Cyclic BODIPY,Boron,Exciton Coupling,Porphyrinoids,NIR Dye,Calix[n]phyrin
更新于2025-09-23 15:19:57
-
Novel electronic structures and enhanced optical properties of boron phosphide/blue phosphorene and F4TCNQ/blue phosphorene heterostructures: a DFT + NEGF study
摘要： Blue phosphorene (Blue-p), an allotrope of black phosphorene, has attracted extensive interest due to its hexagonal crystal with a flat arranged layer of phosphorus atoms. However, the indirect band gap of Blue-p greatly hinders its applications in optoelectronics. By stacking both boron phosphide (BP) and the organic molecule 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) with Blue-p, we construct BP/Blue-p and F4TCNQ/Blue-p heterostructures. We reveal that the BP/Blue-p heterostructure possesses a direct band gap of 0.605 eV and is tunable via in-plane strain and an external electric field. Moreover, it also has remarkable optical absorption in the UV region and enhanced transport properties. Furthermore, by doping with F4TCNQ, the F4TCNQ/Blue-p heterojunction displays type-II semiconducting properties with a flat valence band and Van Hove singularities at the Fermi level, which can be used to achieve extremely low in-band tunneling, yielding low static power dissipation and large drive currents in the ON regime of transistors. Due to the superior electronic, optical and transport properties, Blue-p-based heterostructures are promising candidates for electronic and optical device applications.
关键词： DFT,optical properties,electronic properties,transport properties,Blue phosphorene,heterostructures,boron phosphide,F4TCNQ,NEGF
更新于2025-09-23 15:19:57
-
van der Waals heterostructures combining graphene and hexagonal boron nitride
摘要： As the first in a large family of 2D van der Waals (vdW) materials, graphene has attracted enormous attention owing to its remarkable properties. The recent development of simple experimental techniques for combining graphene with other atomically thin vdW crystals to form heterostructures has enabled the exploration of the properties of these so-called vdW heterostructures. Hexagonal boron nitride is the second most popular vdW material after graphene, owing to the new physics and device properties of vdW heterostructures combining the two. Hexagonal boron nitride can act as a featureless dielectric substrate for graphene, enabling devices with ultralow disorder that allow access to the intrinsic physics of graphene, such as the integer and fractional quantum Hall effects. Additionally, under certain circumstances, hexagonal boron nitride can modify the optical and electronic properties of graphene in new ways, inducing the appearance of secondary Dirac points or driving new plasmonic states. Integrating other vdW materials into these heterostructures and tuning their new degrees of freedom, such as the relative rotation between crystals and their interlayer spacing, provide a path for engineering and manipulating nearly limitless new physics and device properties.
关键词： quantum Hall effect,graphene,moiré superlattices,polaritons,hexagonal boron nitride,van der Waals heterostructures
更新于2025-09-19 17:15:36
-
Structural, electrical and mechanical properties of ВС films prepared by pulsed laser deposition from mixed and dual boron-diamond/graphite targets
摘要： Relatively low and high deposition rates of BCх films were realized by pulsed laser ablation of mixed B–diamond and dual B–graphite targets, respectively. Deposition was performed at 500 °C and the rate of film deposition was determined with respect to the number of atomic monolayers (obviously less or more than one monolayer) grown for one laser pulse. In the case of BCх films formation with a low deposition rate, doping with B facilitated the growth of the nanocomposite structure, which possessed an increased fraction of sp3 bonds, a very low electrical resistance, and an improved mechanical performance. The change of the sheet resistance of these films as the temperature was reduced from 300 to 65 K had a metallic character. For about 95-nm-thick films with bulk compositions of BC1.7 and BC0.6, the resistivity at room temperature were approximately equal to 1.5 mΩ·cm, and the lowest resistivity of 0.23 mΩ·cm was detected for B-enriched film at 85 K. With an increase in the B atom concentration in such films, the charge carrier (holes) concentration decreased, and their mobility increased from 180 to 10,500 cm2·V?1·s?1 due to samples cooling. The application of a higher deposition rate from the dual B–graphite target activated surface migration of condensed atoms, which caused the development of granular morphology, the B segregation and the reduction of the sp3 bond fraction. The hardness and electrical conductivity of such films were obviously inferior to those of the films obtained by PLD with a low deposition rate.
关键词： Hardness,Thin films,Resistivity,Pulsed laser deposition,Boron,Diamond-like carbon
更新于2025-09-19 17:15:36
-
Amorphous Boron Suboxide
摘要： We study the atomic structure and the electronic and mechanical properties of amorphous boron suboxide (B6O) using an ab initio molecular dynamic technique. The amorphous network is attained from the rapid solidification of the melt and found to consist of boron and oxygen rich regions. In the boron rich regions, boron atoms form mostly perfect or imperfect pentagonal pyramid like configurations that normally yield the construction of ideal and incomplete B12 molecules in the model. In addition to the B12 molecules, we also observe the development of a pentagonal bipyramid (B7) molecule in the noncrystalline structure. In the oxygen rich regions, on the other hand, boron and oxygen atoms form threefold and twofold coordinated motifs, respectively. The boron rich and oxygen rich regions indeed represent structurally the characteristic of amorphous boron and boron trioxide (B2O3). The amorphous phase possess a small band gap energy with respect to the crystal. On the bases of the localization of the tail states, we suggest that the p-type doping might be more convenient than the n-type doping in amorphous B6O. Bulk modulus and Vickers hardness of the non-crystalline configuration is estimated to be 106 and 13-18 GPa, respectively, which are noticeably less than those of the crystalline structure. Such a noticeable decrease in the mechanical properties is attributed to the presence of open structured B2O3 glassy domains in the amorphous model.
关键词： hardness,amorphous,boron suboxide
更新于2025-09-19 17:15:36
-
Thickness-tunable growth of ultra-large, continuous and high-dielectric h-BN thin films
摘要： The outstanding thermal properties, mechanical properties and large optical bandgap of hexagonal boron nitride (h-BN) make it very attractive for various applications in ultrathin 2D microelectronics. However, the synthesis of large lateral size and uniform h-BN thin films with a high breakdown strength still remains a great challenge. Here, we comprehensively investigated the effect of growth conditions on the thickness of h-BN films via low pressure chemical vapor deposition (LPCVD). By optimizing the LPCVD growth parameters with electropolished Cu foils as the deposition substrates and developing customized "enclosure" quartz-boat reactors, we achieved thickness-tunable (1.50–10.30 nm) growth of h-BN thin films with a smooth surface (RMS roughness is 0.26 nm) and an ultra-large area (1.0 cm × 1.0 cm), meanwhile, the as-grown h-BN films exhibited an ultra-high breakdown strength of ~10.0 MV cm?1, which is highly promising for the development of electrically reliable 2D microelectronic devices with an ultrathin feature.
关键词： dielectric breakdown strength,h-BN,thin films,LPCVD,2D microelectronics,hexagonal boron nitride
更新于2025-09-19 17:15:36
-
Time-resolved photoluminescence spectral analysis of phonon-assisted DAP and e-A recombination in N+B-doped <i>n</i> -type 4H-SiC epilayers
摘要： It is crucial to clarify the roles of phonon-assisted donor-acceptor pairs (DAPs) and free-to-acceptor (e-A) emissions in n-type 4H-SiC doped with nitrogen (N) and boron (B), where N and B induce the shallow donor and the D center (deep B) acceptor levels, respectively, in order to understand the complicated carrier recombination mechanism, as well as developing fluorescent SiC with a high color rendering index by controlling the ratio of the two overlapped emissions. Here, time-resolved photoluminescence (TRPL) spectral analyses were performed, in which phonon-assisted DAPs and e-A components were individually recognized. The D center-related green luminescence (1.6–2.8 eV) shows a non-exponential decay followed by a very slow decay in TRPL measurements at room temperature (RT). It emerges that most of the DAP emission intensities decay much faster than e-A emissions and contribute to what is initially fast and non-exponential decay at low temperatures, while the slow decay at RT is mainly from e-A emissions. At a much higher temperature, such as 473 K, only the e-A emission remains and the decay transforms from non-exponential to exponential behavior. High-temperature thermal quenching of e-A emissions exhibits different behaviors for samples with differing B doping concentrations. An activation energy of 0.6 eV was estimated from the Arrhenius plot of e-A emission intensity from a B-doped sample, which matches the D center level. This indicates that the hole thermal emission rate is greatly enhanced at a high temperature, which accelerates the decay of e-A emission intensity at high temperatures.
关键词： donor-acceptor pair,time-resolved photoluminescence,silicon carbide,D center,boron doping
更新于2025-09-19 17:15:36
-
Aggregation-Induced Electrochemiluminescence of Carboranyl Carbazoles in Aqueous Media
摘要： The aggregation-induced electrochemiluminescence (AIECL) of carboranyl carbazoles in aqueous media was investigated for the first time. Quantum yields, morphologies, and particle sizes were observed to determine the electrochemiluminescence (ECL) performance of these aggregated organic dots (ODs). All compounds exhibit much higher ECL stability and intensity than the carborane-free compound, demonstrating the essential role of the carboranyl motif. Moreover, the results of cyclic voltammetry (CV) suggest that redox take place at the carboranyl motif. The excited states of ODs were proposed to be generated by the mechanism of surface state transitions. More importantly, these compounds with reductive-oxidative mechanism is exclusive from other organic materials with oxidative-reductive mechanism. Our experiments and data have established the relation between AIE organic structures and ECL properties that has a strong potential for biological and diagnostic applications.
关键词： aggregation induced emission,boron cluster,organic dots,carborane,electrochemiluminescence
更新于2025-09-19 17:15:36