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- 2019
- low-temperature electronics
- junction field-effect transistors
- differential operational amplifier
- LTspice environment
- differential stage
- common-mode rejection ratio
- class AB operation
- optimization of analog electronic circuit
- operational amplifier
- LTspice environment
- Electronic Science and Technology
- Don State Technical University
- Southern Federal University
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Improvement of Ga distribution with Sb incorporation for two-step low-temperature processing of CIGSe thin film solar cells
摘要： In this study, the application of Sb incorporation for low-temperature (≤ 450 °C) processing of Cu(In,Ga)Se2 (CIGSe) solar cells is explored. At low reaction temperature, most Ga remains at the back of the ?lm adjacent to the Mo back contact. We observed that the incorporated Sb enhanced grain size and improved device performance compared with similarly processed CIGSe ?lms made without Sb. From the energy-dispersive spectroscopy analysis and secondary ion mass spectrometry results, it was determined that elemental Ga accumulation at the back of the reacted ?lm after the two-step selenization process was signi?cantly alleviated owing to Sb incorporation. Signi?cant Sb-induced grain size enhancement was con?rmed using cross-sectional scanning electron microscopy. The electronic and optical properties of the Sb incorporated CIGSe ?lms were examined with admittance spectroscopy and ?uorescence lifetime imaging techniques.
关键词： Ga distribution,Thin ?lm solar cell,Sb incorporation,Low temperature process
更新于2025-11-14 17:28:48
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The Preparation and Characterization of Fluorinated Graphene Oxide with Different Degrees of Oxidation
摘要： For many excellent graphene derivatives, tailoring the material properties is crucial to get a broader application. In the present work, a series of fluorinated graphene oxide (FGO) with various oxidation degree were synthesized using a modified Hummers method at different reaction temperatures. The structure and property of FGO were analyzed by X-ray diffraction (XRD), Fourier transform infra-red spectra (FT-IR), X-ray photoelectron spectra (XPS) and Zeta potential analysis. The results indicate that the oxygen contents range from 5.61 % to 21.96 % in FGO can be tuned by altering the reaction temperatures. The oxygen in FGO is presented mainly in the form of epoxide and carboxyl groups. With increasing reaction temperature from 50 °C to 90 °C, the oxygen content in FGO decreases and thicker multilayered FGO is formed with lower dispersibility.
关键词： Controllable oxidation,Fluorinated Graphene Oxide,Low temperature reaction
更新于2025-11-14 17:04:02
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Flexible and stable organic field-effect transistors using low-temperature solution-processed polyimide gate dielectrics
摘要： Polyimide (PI) has been widely used as a gate dielectric due to its remarkable thermal stability, chemical resistance, and mechanical flexibility. However, the high processing temperature and high surface energy of PI gate dielectrics hinder the realization of flexible and reliable electronic applications with low-cost manufacturing. Here, a low-temperature solution-processed organic field-effect transistor (OFET) is successfully demonstrated using a fully imidized soluble PI gate dielectric. The low temperature processability of soluble PI gate dielectrics is confirmed by investigating the effect of annealing temperature on the dielectric properties and electrical characteristics. By blending 6,13-Bis(triisopropylsilylethynyl)pentacene with polystyrene, the reliability of OFET is considerably enhanced while maintaining high device performance. As a result, OFETs exhibit excellent flexibility and can be integrated with ultrathin parylene substrates without degrading device performance. This work presents the steps to develop flexible and reliable electronic applications with low-cost manufacturing.
关键词： organic field-effect transistors,solution-processed,polyimides,low-temperature,operational stability
更新于2025-11-14 15:19:41
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A simple, low cost ink system for Drop-On-Demand printing high performance metal oxide dielectric film at low temperature
摘要： We have successfully developed an ink system containing cheap raw materials through a simple process and have printed ZrOx dielectric film at a relatively low annealing temperature of 250 °C. The ZrOx dielectric film afforded a leakage current density of 5.4×10-6 A/cm2 at 1 MV/cm and a dielectric constant of 10, which shows promising future for flexible electronics. The ink system shows a temperature-induced gelation behavior and gel network is formed when temperature rises. A high concentration of oxide precursors is obtained near the network area through the absorption function of polymer groups, and thus oxide structure can be formed at a relatively low temperature due to the shorter diffusion path of precursor polymerization. The microstructure of printed ZrOx film was investigated by High Resolution Transmission Electron Microscope (HRTEM), Fourier-transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS), and the effect of annealing temperature on film structure was studied.
关键词： dielectric film,low temperature,Low cost,ink system,Drop-On-Demand printing
更新于2025-09-23 15:23:52
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High performance, low temperature processed Hf-In-Zn-O/HfO2 thin film transistors, using PMMA as etch-stop and passivation layer
摘要： High performance, low operating voltage and low temperature processed Hf-In-Zn-O/HfO2 thin film transistors (HIZO/HfO2 TFTs), using spin-coated polymethyl-methacrylate (PMMA) as passivation and etch-stop layer (ESL), were fabricated and characterized. Devices showed an average field-effect mobility of 15 cm2/Vs and threshold voltage (VT) of 0.2 V, working in the operating voltage range below 2 V. The Ion/off ratio was 104. Device parameters remained without significant change after months of fabrication. Stability of PMMA passivated devices, after gate and gate-drain bias stress is compared with data reported for other materials used as ESL or passivation layer, showing similar or better performance in preventing threshold voltage shifts, hump, reduction of mobility or of the on/off current ratio.
关键词： Low temperature HfO2/HIZO TFTs,Low operation voltage TFTs,PMMA passivated HIZO TFTs,Stability HfO2/HIZO TFTs
更新于2025-09-23 15:23:52
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Low-Temperature Graphene Growth by Forced Convection of Plasma-Excited Radicals
摘要： We developed the forced convection (FC)-PECVD method for the synthesis of graphene in which a specially designed blowing plasma source is used at moderate gas pressure (1-10 Torr) and the distribution of reactive radicals reaching the substrate surface can be controlled by forced convection. Self-limiting growth of graphene occurs on copper foil and monolayer graphene growth with few defects is achieved even at low temperature (<400 °C). We also demonstrated the enlargement of growth area using the scalable blowing plasma source. We expect that the FC-PECVD method overcomes the limitations of conventional low-temperature PECVD and provides a breakthrough for the achievement of industrial applications based on graphene.
关键词： low temperature growth,self-limiting growth,Graphene,forced-convection plasma CVD
更新于2025-09-23 15:23:52
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Normally-off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors with Gate-First Process
摘要： In this study, AlGaN/GaN heterojunction metal-insulator-semiconductor field-effect transistors with gate-first process were developed for normally-off operation with p-GaN cap layers and SiNx dielectrics. To avoid the effect of the annealing process on the gate, a low-temperature ohmic contact technique was developed at an annealing temperature of about 500 oC for 20 min in N2 ambient. With the assistance of inductively coupled plasma dry etching, a contact resistance of 1.45 Ω·mm and sheet resistance of 1080.1 Ω/□ were obtained in the recessed region. Owing to the inset of the SiNx layer, the threshold voltage of fabricated device was enhanced to approximately 2 V, and good pinch-off was observed with the gate voltage up to 16 V. Compared with the conventional high-temperature ohmic annealing process, the gate leakage current was suppressed significantly in both reverse and forward directions. Good device performance was confirmed with a maximum channel electron field-effect mobility of 1500 cm2V-1s-1.
关键词： low-temperature ohmic contact,normally-off,gate-first,metal-insulator-semiconductor,AlGaN/GaN HFET
更新于2025-09-23 15:23:52
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Definition of design guidelines, construction, and performance of an ultra-stable scanning tunneling microscope for spectroscopic imaging
摘要： Spectroscopic-imaging scanning tunneling microscopy is a powerful technique to study quantum materials, with the ability to provide information about the local electronic structure with subatomic resolution. However, as most spectroscopic measurements are conducted without feedback to the tip, it is extremely sensitive to vibrations coming from the environment. This requires the use of laboratories with low-vibration facilities combined with a very rigid microscope construction. In this article, we report on the design and fabrication of an ultra-stable scanning tunneling microscope (STM) for spectroscopic-imaging measurements that operates in ultra-high vacuum and at low temperatures (4 K). We start from existing designs with sapphire as the main material and improve the stiffness further by performing finite element analysis calculations for the main components of the microscope to guide design choices on the geometry of the parts. With this strategy, we construct a STM head with measured lowest resonant frequencies above f0 = 13 kHz for the coarse approach mechanism, a value three times higher than what has been previously reported and in good agreement with the calculations. This allows us to achieve an average vibration level of ～6 fm/√Hz, without a dedicated low-vibration lab. We demonstrate the microscope’s performance with topographic and spectroscopic measurements on the correlated metal Sr2RhO4, showing the quasiparticle interference pattern in real and reciprocal space with high signal-to-noise ratio.
关键词： ultra-high vacuum,low temperature,spectroscopic imaging,finite element analysis,ultra-stable,scanning tunneling microscopy
更新于2025-09-23 15:23:52
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A lithium aluminium borate composite microwave dielectric ceramic with low permittivity, near-zero shrinkage, and low sintering temperature
摘要： A low temperature co-fired dielectric material with low shrinkage during the sintering process can enhance the circuit design of electronic devices. Lithium aluminium borate composite ceramic with a composition of Li2O:Al2O3:B2O3=1:1:2 (abbreviated: LAB) was prepared by a traditional solid-state reaction method. These ceramics have a low sintering temperature (675–750 °C), low permittivity, and near-zero shrinkage. When the sintering temperature was 725 °C, the LAB ceramics exhibited a small shrinkage of ~2.4% and the best microwave dielectric properties with εr = 3.9, Q × f = 35?500 GHz, and τ? = -64 ppm/°C. The LAB ceramics sintered at 700 °C have near-zero shrinkage of ~ 0.4% and good microwave dielectric properties. The ceramics transformed from (Li2B4O7 and Al2O3) to (Li2Al2B4O10 and Li4Al4B6O17) phases with increasing the sintering temperature, which may be the reason why they show marginal shrinkage. In addition, the ceramics could be co-fired with Ag, indicating that this material is a good candidate for low-temperature co-fired ceramic devices.
关键词： Low temperature co-fired ceramic,Lithium aluminium borate composite,Near-zero shrinkage
更新于2025-09-23 15:23:52
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Low-temperature red long-persistent luminescence of Pr3+ doped NaNbO3 with a perovskite structure
摘要： Long persistent luminescence (LPL) phosphors can keep emitting light after the removal of excitation sources under thermal disturbances at room temperature, which provides a wide application from emergency signs to in vivo biological imaging. Unfortunately, these phosphors will exhibit poor LPL performance once the thermal activation energy is not sufficient to release the captured carriers from the traps at low-temperature. Herein, a red phosphor of Pr3+ doped NaNbO3 with a perovskite structure is designed, which realizes a low-temperature LPL. The red emission (λem=612 nm) is ascribed to the 1D2→3H4 transition of Pr3+ ions, and LPL can be visually recognized over 16 hours after the removal of the excitation source at 200 K. Low-temperature thermoluminescence curves, temperature-dependent photoluminescence spectra indicate that abundant traps (≤ 0.6 eV) exist in NaNbO3: Pr3+, which is critical for ensuring the low-temperature LPL. The investigation on low-temperature LPL properties of NaNbO3: Pr3+ helps us to reveal the importance of defects structure, and provides new opportunities in exploring luminescence materials applied in an extreme conditions.
关键词： low-temperature,persistent luminescence,defects structure,phosphors
更新于2025-09-23 15:23:52