1：Experimental Design and Method Selection:

The study involved fabricating OFETs and metal-insulator-metal (MIM) capacitors using soluble PI gate dielectrics processed at low temperatures (25°C to 200°C). Methods included spin-coating, printing, thermal evaporation, and characterization techniques to assess dielectric properties, electrical characteristics, and crystallinity.

2：Sample Selection and Data Sources:

Samples included soluble PI thin films, TIPS-pentacene and TIPS-pentacene:PS blend thin films, fabricated on glass or parylene substrates. Data were sourced from electrical measurements, microscopy, spectroscopy, and diffraction analyses.

3：List of Experimental Equipment and Materials:

Equipment included a stylus surface profiler (DektakXT, Bruker), semiconductor parameter analyzer (4200-SCS, Keithley), precision LCR meter (ZM2376, NF Corporation), atomic force microscope (Veeco Dimension 3100 + Nanoscope V), FTIR spectroscopy (VERTEX 80, Bruker), high-resolution XRD (X’pert PRO MRD, Phillips), polarized optical microscope (Leica DM2700, Leica), and dispenser equipment (Musashi Engineering, Image Master 350 PC). Materials included parylene C (diX-C, Daisankasei Co., Ltd.), Cytop (CTL-809M, Asahi Glass), TIPS-pentacene (>99.9%, Ossila), polystyrene (MW ~280,000, Sigma-Aldrich), mesitylene (98%, Sigma-Aldrich), aluminum, silver, and solvents like γ-butyrolactone.

4：9%, Ossila), polystyrene (MW ~280,000, Sigma-Aldrich), mesitylene (98%, Sigma-Aldrich), aluminum, silver, and solvents like γ-butyrolactone. Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Fabrication steps involved depositing gate electrodes by thermal evaporation, spin-coating soluble PI gate dielectrics at varying annealing temperatures (25°C, 75°C, 150°C, 200°C), printing bank and semiconductor layers using dispenser equipment, annealing for crystallization, and evaporating source/drain electrodes. Electrical and material characterizations were performed under ambient or controlled conditions.

5：Data Analysis Methods:

Data analysis included extracting electrical parameters (e.g., threshold voltage, field-effect mobility) using standard equations, analyzing dielectric properties from capacitance and leakage current measurements, and evaluating crystallinity and morphology through AFM, FTIR, XRD, and POM.