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Effects of Annealing on Characteristics of Cu2ZnSnSe4/CH3NH3PbI3/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells
摘要： This paper presents new photovoltaic solar cells with Cu2ZnSnSe4/CH3NH3PbI3(MAPbI3)/ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glass-substrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu2ZnSnSe4, MAPbI3 perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI3 perovskite film was deposited on Cu2ZnSnSe4 hole-transporting layer that has been annealed at different temperatures. TheseCu2ZnSnSe4 filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu2ZnSnSe4 hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650°C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm2, and the device fill factor was elevated to 76.3%. In addition, the device power-conversion efficiency has been improved to 17.4%. The output power Pmax was as good as 1.74 mW and the device series-resistance was 17.1 ?.
关键词： IZO,hole-transporting material,perovskite,CZTSe,magnetron sputtering
更新于2025-09-23 15:19:57
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Effect of RF Power on the Properties of Sputtered-CuS Thin Films for Photovoltaic Applications
摘要： Copper sulfide (CuS) thin films were deposited on a glass substrate at room temperature using the radio-frequency (RF) magnetron-sputtering method at RF powers in the range of 40–100 W, and the structural and optical properties of the CuS thin film were investigated. The CuS thin films fabricated at varying deposition powers all exhibited hexagonal crystalline structures and preferred growth orientation of the (110) plane. Raman spectra revealed a primary sharp and intense peak at the 474 cm?1 frequency, and a relatively wide peak was found at 265 cm?1 frequency. In the CuS thin film deposited at an RF power of 40 W, relatively small dense particles with small void spacing formed a smooth thin-film surface. As the power increased, it was observed that grain size and grain-boundary spacing increased in order. The binding energy peaks of Cu 2p3/2 and Cu 2p1/2 were observed at 932.1 and 952.0 eV, respectively. Regardless of deposition power, the difference in the Cu2+ state binding energies for all the CuS thin films was equivalent at 19.9 eV. We observed the binding energy peaks of S 2p3/2 and S 2p1/2 corresponding to the S2? state at 162.2 and 163.2 eV, respectively. The transmittance and band-gap energy in the visible spectral range showed decreasing trends as deposition power increased. For the CuS/tin sulfide (SnS) absorber-layer-based solar cell (glass/Mo/absorber(CuS/SnS)/cadmium sulfide (CdS)/intrinsic zinc oxide (i-ZnO)/indium tin oxide (ITO)/aluminum (Al)) with a stacked structure of SnS thin films on top of the CuS layer deposited at 100 W RF power, an open-circuit voltage (Voc) of 115 mA, short circuit current density (Jsc) of 9.81 mA/cm2, fill factor (FF) of 35%, and highest power conversion efficiency (PCE) of 0.39% were recorded.
关键词： covellite,CuS/SnS absorber,CuS thin film,solar cell,RF magnetron sputtering
更新于2025-09-23 15:19:57
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Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications
摘要： F-and-Ga co-doped ZnO films were sputter-deposited on glass substrates by RF magnetron sputtering method. The fabricated films were characterized by different techniques. It was found that all the films were poly-crystalline with a hexagonal wurtzite structure with a c-axis preferred orientation of growth. The effect of the substrate temperature on the surface morphology, electrical and optical properties of the films was also investigated. The optimal growth temperature was found to be 440 oC which led to the optimal film with the resistivity of 6.81 × 10?4 Ωcm, carrier concentration of 2.61 × 1020 cm?3, mobility of 35.1 cm2/V, over-90% transmittance in the region of 400–1200 nm and a wide optical bandgap of 3.49 eV. This optimal film was employed in as the front contact in perovskite solar cells and resulted in a high power-conversion efficiency of 15.32%. This indicates that such a film can be promisingly useful for high-performance thin-film solar cells.
关键词： High mobility,Thin-film solar cells,F-and-Ga co-doped ZnO films,Magnetron sputtering
更新于2025-09-23 15:19:57
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Controlled Sputtering Pressure on High-Quality Sb2Se3 Thin Film for Substrate Configurated Solar Cells
摘要： Magnetron sputtering has become an effective method in Sb2Se3 thin film photovoltaic. Research found that post-selenization treatments are essential to produce stoichiometric thin films with desired crystallinity and orientation for the sputtered Sb2Se3. However, the influence of the sputtering process on Sb2Se3 device performance has rarely been explored. In this work, the working pressure effect was thoroughly studied for the sputtered Sb2Se3 thin film solar cells. High-quality Sb2Se3 thin film was obtained when a bilayer structure was applied by sputtering the film at a high (1.5 Pa) and a low working pressure (1.0 Pa) subsequently. Such bilayer structure was found to be beneficial for both crystallization and preferred orientation of the Sb2Se3 thin film. Lastly, an interesting power conversion efficiency (PCE) of 5.5% was obtained for the champion device.
关键词： Sb2Se3,magnetron sputtering,substrate configuration,post-selenization,working pressure,thin film solar cell
更新于2025-09-23 15:19:57
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Characterization of sputtered MoOx thin films with different oxygen content and their application as back contact in CdTe solar cells
摘要： Transparent MoOx thin films with varied composition were successfully prepared by sputtering and the effects of oxygen contents on the composition stoichiometry, defect states, work functions, electrical and optical properties of MoOx films were systematically studied. These thin films were then utilized in cadmium telluride solar cells to act as back contact buffers. As compared with the CdTe solar cells with Au back contact, deteriorated performance was witnessed in those with MoOx buffers. The deterioration was demonstrated to be caused by the oxidation of CdTe surface, the large valence band offset and the insufficient work function. Finally, by optimizing the back contacts to form a CuCl/MoOx/ITO composite back contact, the efficiency was improved to 11.8%. This work demonstrates feasible approaches to prepare MoOx thin films with varied oxygen concentrations which could be easily applied to many other thin film solar cells and provide important indications in the preparation and optimization of the performance for bifacial devices.
关键词： Back contact,CdTe solar Cells,Molybdenum oxide,Magnetron sputtering
更新于2025-09-23 15:19:57
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Electrical characterization of two analogous Schottky contacts produced from <i>N</i> -substituted 1,8-naphthalimide
摘要： The aim of this study was to analyze the interface states (Nss) in pure Al//p-Si/Al, Al/N-F Nft/p-Si/Al and Al/N-T Nft/p-Si/Al Schottky barrier diodes (SBDs). N-Substituted 1,8-naphthalimide thin films were deposited on a p-Si substrate by spin coating and annealed at B200 1C for 60 s under an air atmosphere. Al contacts were obtained via reactive magnetron sputtering. The current voltage (I–V) characteristics of the SBDs were measured at room temperature. From the I–V characteristics, the SBDs ideality factor (n) and zero-bias barrier height values (Fb) of 1.27, 1.00, and 1.05 and 0.66 eV, 0.70 eV, and 0.64 eV were observed for the Al//p-Si/Al, Al/N-F Nft/p-Si/Al and Al/N-T Nft/p-Si/Al Schottky barrier diodes, respectively. The interface state density distribution profile (Nss) as a function of (Ess–Ev) was extracted from the forward-bias I–V measurements by considering the effective barrier height and (Fe) and series resistance (Rs) of the Schottky diode. The obtained Nss plot tendency showed that the existence of interface states has no significant effect on the rectifying and capacitance characteristics. The Nss values with the 1,8-naphthalimide layer were lower than that without it. This shows that naphthalimide exhibits a strong contribution by blocking the unwanted states and some traps in the conduction mechanism, which may cause possible cracks or deep paths for carriers to travel along the junction.
关键词： magnetron sputtering,interface states,Schottky barrier diodes,spin coating,1,8-naphthalimide
更新于2025-09-23 15:19:57
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Cu <sub/>2</sub> O porous nanostructured films fabricated by positive bias sputtering deposition
摘要： In this work, the authors fabricated Cu2O porous nanostructured films (PNFs) on glass slide substrates by the newly developed positive bias deposition approach in a balanced magnetron sputtering (MS) system. It was found that the surface morphology, crystal structure and optical property of the as-deposited products were greatly dependent on the applied positive substrate bias. In particular, when the substrate was biased at +50 and +150 V, both of the as-prepared Cu2O PNFs exhibited a unique triangular pyramids-like structure with obvious edges and corners and little gluing, a preferred orientation of (111) and a blue shift of energy band gap at 2.35 eV. Quantitative calculation results indicated that the traditional bombardment effects of electrons and sputtering argon ions were both negligible during the bias deposition in the balanced MS system. Instead, a new model of tip charging effect was further proposed to account for the controllable formation of PNFs by the balanced bias sputtering deposition.
关键词： positive bias deposition,balanced magnetron sputtering,Cu2O,porous nanostructured films
更新于2025-09-19 17:15:36
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Optical, electrical and microstructural properties of SiC thin films deposited by reactive dc magnetron sputtering
摘要： In this study, amorphous silicon carbide (SiC) thin films of variable compositions were deposited on Si (100) and glass substrates by reactive direct current magnetron sputtering of high purity silicon target, using CH4 as reactive gas. The composition and the properties of the coatings have been modified by the change in the reactive gas flow rate from 5% to 50%. Spectrophotometer has been used to measure the optical transmittance and reflectance of silicon carbide thin films over the spectral range from 280 to 1000 nm. The optical constants such as refractive indices and the extinction coefficients of the films were calculated. The band gap values of the deposited films were further evaluated with respect to the gas flow rate. Transmittance values of SiC films changed from 85% to almost 0% in the visible light range. The optical band gap values of the films were altered from 1.7 to 2.7 eV. The activation energy was found to increase from 0.16 eV up to 1 eV and dark conductivity decreased from 7.42x10-4 to 1.06x10-9 Ω-1cm-1 while carbon concentration in the films increased. The results demonstrated that the optical and electrical properties of SiC films could easily be tailored by modifying Si and C concentrations in the coating composition, for the same film thicknesses.
关键词： optical properties,microstructural properties,Silicon carbide thin films,electrical properties,reactive direct current magnetron sputtering
更新于2025-09-19 17:15:36
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Studying the influence of deposition temperature and nitrogen contents on the structural, optical, and electrical properties of N-doped SnO2 films prepared by direct current magnetron sputtering
摘要： This report focuses on studying and investigating in detail the structural, electrical, and optical properties of p-type N-doped SnO2 (NTO) versus the deposition temperature and nitrogen content. P-type transparent conductive NTO films were deposited on quartz glass substrates using a direct current (DC) magnetron sputtering method. The substitution of oxygen by nitrogen in the SnO2 host lattice was verified using measurements such as X-ray photoelectron spectroscopy. The position of the N3? defect state in the band gap was determined using photoluminescence and ultra-violet-visible spectroscopy measurements. The data for the (110) to (101) rutile lattice planes changed, and the rutile (plane (101)) to cubic (plane (111)) SnO2 phase transition indicated the substitution of oxygen by nitrogen in the SnO2 host lattice. The best p-type conductive properties achieved were 8 × 10?2 Ω cm, 1.36 × 1019 cm?3, and 6.75 cm2 V?1 s?1 for the resistivity, hole concentration, and hole mobility, respectively, for film deposited at the optimum substrate temperature of 300 °C in a gas mixture of Ar and 50% N2.
关键词： deposition temperature,nitrogen content,p-type N-doped SnO2 thin film,X-ray photoelectron spectroscopy,DC magnetron sputtering,X-ray diffraction
更新于2025-09-19 17:15:36
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Nanostructure and Optical Property Investigations of SrTiO3 Films Deposited by Magnetron Sputtering
摘要： Strontium titanate thin films were deposited on a silicon substrate by radio-frequency magnetron sputtering. The structural and optical properties of these films were characterized by X-ray diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and spectroscopic ellipsometry, respectively. After annealing at 600–800 °C, the as-deposited films changed from amorphous to polycrystalline. It was found that an amorphous interfacial layer appeared between the SrTiO3 layer and Si substrate in each as-deposited film, which grew thicker after annealing. The optical parameters of the SrTiO3 film samples were acquired from ellipsometry spectra by fitting with a Lorentz oscillator model. Moreover, we found that the band gap energy of the samples diminished after thermal treatment.
关键词： thermal treatment,strontium titanate film,optical properties,magnetron sputtering
更新于2025-09-19 17:15:36