研究目的
To fabricate Cu2O porous nanostructured films (PNFs) with tunable building nanostructures and study their properties using a newly developed positive bias deposition approach in a balanced magnetron sputtering system, and to propose a new mechanism (tip charging effect) for their formation.
研究成果
Cu2O PNFs were successfully fabricated with morphology, structure, and optical properties dependent on positive substrate bias. A new tip charging effect model explains the formation, as traditional bombardment effects are negligible. This approach allows for tunable PNFs with potential improved performances.
研究不足
The study is limited to Cu2O films and specific bias voltages in a balanced MS system; the tip charging effect model is qualitative and not fully quantified, and the influence mechanisms on optical properties are not entirely clear.
1：Experimental Design and Method Selection:
The experiment used a balanced magnetron sputtering system with a positive bias deposition approach to fabricate Cu2O PNFs on glass slide substrates. The rationale was to overcome limitations of traditional methods and achieve flexible preparation of PNFs without impurities.
2：Sample Selection and Data Sources:
Glass slide substrates were used, selected for their suitability in thin film deposition. Data sources included FESEM for morphology, XRD for crystal structure, and UV-vis spectrophotometer for optical properties.
3：List of Experimental Equipment and Materials:
Equipment included a JGP500A radio-frequency balanced MS system, Cu target (
4：99% purity), direct-current power supply for biasing, quartz crystal oscillator for thickness monitoring, Veeco Dektak 150 surface profile measuring equipment, ZEISS SUPRA 55 FESEM, RIGAKU D/Max 2500 PC XRD, and SHIMADZU UV-2450 UV-vis spectrophotometer. Materials included high pure Ar gas (999%). Experimental Procedures and Operational Workflow:
The chamber was evacuated to
5：0×10^-4 Pa, back-filled with Ar at 15 sccm to maintain 10 Pa pressure. Pre-sputtering for 10 min was done to remove oxide layer. Deposition was at 80 W RF power, with substrate bias voltages of 0 V, +50 V, +100 V, +150 V, and +200 V. Film thickness was controlled to ~240 nm. Data Analysis Methods:
Data were analyzed using Scherrer Formula for grain size from XRD, and linear extrapolation from (Ahv)^2 vs. hv curves for band gap calculation.
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field-emission scanning electron microscope
ZEISS SUPRA 55
ZEISS
Used to characterize the surface morphology of the deposited films.
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powder x-ray diffractometer
RIGAKU D/Max 2500 PC
RIGAKU
Used to analyze the crystal structure of the films.
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ultraviolet-visible spectrophotometer
SHIMADZU UV-2450
SHIMADZU
Used to measure the optical properties and band gap of the films.
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surface profile measuring equipment
Veeco Dektak 150
Veeco
Used to confirm the thickness of the deposited films.
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balanced magnetron sputtering system
JGP500A
Used for depositing Cu2O films on substrates with controlled parameters.
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quartz crystal oscillator
Used to monitor the film thickness during deposition.
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direct-current power supply
Used to apply bias voltage to the substrate.
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Cu target
Sputtering target for depositing copper, which oxidizes to form Cu2O.
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