- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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P‐6.7: Investigation of Full‐Color Solutions for Micro‐LED Display
摘要： Micro-LED is considered as the next generation display technology and has got the attention of many research groups and companies in the world. It is a kind of display consists of microscopic LEDs integrated on driving circuit. And it has many advantages such as high brightness, low power consumption, quick response, wide viewing angle, self-emitting, long lifetime, good contrast, and due to its micro size, it has extremely high resolution which is really suitable for micro-display like VR and AR. However, there are still some problems need to be solved before it widely used in display market. In today's trend of pursuing colorization high resolution and high contrast ratio in display field, achieving high quality and high efficiency full- color display is one of the most important challenge for Micro- LED applications. In this paper, several feasible techniques of full-color Micro-LEDs are investigated.
关键词： quantum dot,micro-display,phosphor,Micro-LED,RGB,full-color display
更新于2025-09-11 14:15:04
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P‐4.5: The Applications of Micro‐LED Arrays in The Medical Field
摘要： With the continuous improvement of the quality of life of modern people, people's requirements for lighting continue to increase. In addition to working and living lighting, lighting plays a vital role in medical care. As a medical device, Micro-LED array has the advantages of small size, light weight, good monochromaticity, fast response, large light intensity and long lifetime. In this paper, the effects of different wavelengths of light on the human body are described respectively, and the application of Micro-LED arrays in acne treatment and blood oxygenation is proposed.
关键词： Blood oxygen detection,Phototherapy,LED array,Wavelength,acne treatment,Micro-LED
更新于2025-09-11 14:15:04
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P‐9.5: Homogenous Integration Methods for Micro‐LED and 2T1C Structure HEMT
摘要： The display is an essential part of our life, Micro-LED (Micro-Light Emitting Diode), as an emerging display technology, competes with OLED (Organic Light Emitting Diode) and QLED (Quantum-dot Light Emitting Diode) to become the mainstream technology of the next generation of display technology in the display industry. Due to its advantages such as high resolution, high brightness, high response frequency, high stability, low power consumption, Micro-LED has very big application prospect. GaN-based HEMT (High Electron Mobility Transistor) also is the research hot point due to its high electron mobility. Due to they are the same material, it is possible to combine two of them. In this paper, a homogenous integration method of HEMT driver circuit of 2T1C (2 transistors and 1 capacitor) structure with micro LEDs is proposed and simulated by Silvaco software.
关键词： 2T1C,homogenous integration,HEMT,HEMT-LED,display,Micro-LED
更新于2025-09-11 14:15:04
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23.2: <i>Invited Paper:</i> All silicon passive addressed micro‐LED displays with nanoporous Si/ITO‐free nanomesh layers as light emitting pixels
摘要： In this paper, we will concentrate on the usage of novel technologies and nanostructured materials to fabricate low cost high efficient micro LED displays with unique features.
关键词： nanoporous silicon,nanomesh films,micro-LED,passive addressing
更新于2025-09-11 14:15:04
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55.1: <i>Invited Paper:</i> Achieving high uniformity of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications
摘要： One of the big challenges of micro LED displays is to reduce cost/increase yield and establish excellent manufacturability. Galliumnitride on silicon (GaN-on-Si) LED epiwafers offer fundamental cost advantages to the entire process flow for micro LEDs compared with conventional GaN-on-sapphire LED epiwafers. However, due to the difficulties of epitaxial growth of GaN-on-Si, demonstration of such cost advantages in micro LED application is not wide-spread yet. In this presentation, we have demonstrated excellent emission uniformity with well- controlled strain by precise strain-engineering. This opens the way to use the advantages of GaN-on-Si LED epiwafers in the entire supply chain of micro LED making and thus reduce cost significantly and enable high yield manufacturing.
关键词： curvature,GaN-on-Si,200 mm epiwafer,reproducibility,micro LED,emission wavelength uniformity,strain-engineering
更新于2025-09-11 14:15:04
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P‐6.8: Study of Mass Transfer for Micro‐LED Manufacturing
摘要： Micro-LED is superior to LCD and OLED in terms of power consumption, light efficiency, contrast, response time, reliability, color gamut, lifetime, resolution and viewing angle, it is regarded as the most promising display technology in next generation. However, there are still many technical bottlenecks that hinder the development of Micro-LED display. One of the most important technical issues is mass transfer. Mass transfer is a technology aim to transferring millions or even tens of millions of Micro-LED pixels which grown on sapphire substrates to the glass substrates required for display devices quickly and correctly and providing good electrical and mechanical connections between the Micro-LED pixels and the drive circuits. There have been many companies that have been working to solve this problem and have come up with solutions from different technical aspects. In this paper, we will review several different technologies, classify them from the technical type, evaluate the maturity and achievability of the technology, and analyze the application fields of different technologies.
关键词： magnetic Stamp,fluidic assembly,static electricity,Van der Waals force,laser release,Mass transfer,roll printing,Micro-LED
更新于2025-09-11 14:15:04
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P‐7.4: Thermal Stability Analysis of Micro‐LED arrays
摘要： This paper reported the design and fabrication of an unpackaged, fine pitch, flexible and transparent micro-light-emitting diode (Micro-LED) array with a blue emission wavelength. The resolution of the array was 32 × 32. The temperature distribution of the LED array is measured for analyzing the LED array. The temperature uniformity of this array with regular brightness and that whether the temperature change satisfies the requirement of good temperature uniformity with different brightness are analyzed.
关键词： Thermal Stability,Micro-LED
更新于2025-09-11 14:15:04
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P‐9.4: Hybrid Full Color Micro‐LED Displays with Quantum Dots
摘要： We propose a full color displays with high brightness blue Micro-LED array, using red and green photoluminescence quantum dot as the color conversion material, and successfully begin this study with using a Mini-LED array to excite red and green quantum dot to form a red and green picture.
关键词： Full Color Displays,Quantum Dot,Blue Micro–LED Array
更新于2025-09-11 14:15:04
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16.3: <i>Invited Paper:</i> New development in Red Light‐emitting Diodes (LEDs) using Eu‐doped GaN for Monolithic Micro‐LED Displays
摘要： There has been a strong demand to develop red light-emitting nitride semiconductors for the monolithic integration of the three primary colors (RGB) and the development of a high-resolution display. Such a display is a key device for 'a smart society', in which cyberspace (information processing) and physical space (things) interactively fuse. The ongoing search for an efficient red LED based on GaN is pivotal to those efforts. In blue and green LEDs, InxGa1-xN /GaN multi-quantum wells are used as an active layer. Emission wavelength is determined by In composition in the InGaN. A simple way to realize the red LED is to increase In composition to 0.5. However, lattice mismatch between InGaN and GaN becomes large in InGaN with high In composition, which leads to severe degradation of crystalline quality of InGaN quantum wells. Furthermore, lattice mismatch also induces huge piezoelectric field, resulting in poor radiative recombination due to quantum-confined Stark effects. We have worked on the development of semiconductors intra-center photonics. This novel photonics uses the intra-4f shell transitions of rare-earth ions doped in semiconductors. In 2009, we invented a narrow-band red LED using Eu-doped GaN (GaN:Eu). A main emission line with a half width of less than 1 nm is observed at 621 nm, which can be assigned to the 5D0–7F2 transition of Eu3+ ions. The wavelength is extremely stable against the ambient temperature. Due to optimization of the device processing, the output power of the LED has been increasing steadily to over 1 mW. Utilizing this red LED, small nitride-based monolithic high-resolution optical devices that comprise RGB GaN-based LEDs can be realized for micro-LED displays and/or lighting technology. One of limiting factors for more enhanced light output power is a relatively long radiative lifetime of the Eu emission in GaN:Eu (～300 μs). According to the Fermi’s golden rule, modifying the spontaneous emission rate of Eu ions can be achieved by increasing the photonic density of states at the frequency of spontaneous emission, as already demonstrated with a planar Fabry-Perot cavity. We have boosted the output power by actively manipulating radiative recombination probability at the atomic level of the Eu ions, which can be achieved through control of their photon fields in micro- and nano-cavities. In a GaN:Eu layer embedded in a microcavity consisting of an AlGaN/GaN distributed Bragg reflector (DBR) and a Ag reflecting mirror, a 21-fold increase of the Eu emission intensity was obtained under optical pumping at room temperature. Furthermore, in a preliminary LED with a microcavity consisting of ZrO2/SiO2 and AlInN/GaN DBRs, the output power was enhanced by 10 times. In the talk, current status of the LED and strategies for more improved output power will be presented.
关键词： Monolithic Micro-LED Displays,Eu-doped GaN,Intra-center photonics,Red Light-emitting Diodes,Nitride semiconductors
更新于2025-09-11 14:15:04
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[IEEE 2019 IEEE Photonics Conference (IPC) - San Antonio, TX, USA (2019.9.29-2019.10.3)] 2019 IEEE Photonics Conference (IPC) - Underwater Wireless Optical Communications at 100 Mb/s using Integrated Dual-Color Micro-LEDs
摘要： Integrated blue-violet and blue-green micro-LED arrays, fabricated via a transfer printing method, were employed to demonstrate wavelength division multiplexing underwater data transmission at 100 Mb/s over up to 9 attenuation lengths in a 1.5 m long water tank.
关键词： UWOC,VLC,micro-LED,WDM,transfer printing,turbid
更新于2025-09-11 14:15:04