研究目的
To propose and simulate a homogenous integration method of HEMT driver circuit of 2T1C structure with micro LEDs.
研究成果
A new homogenous integration method of HEMT driver circuit of the 2T1C structure with micro LEDs is proposed, which can improve crystal quality and increase the light-emitting area. This method may solve the mass transfer problem and has potential for future display screen fabrication.
研究不足
The study is based on simulation, and actual fabrication and testing are needed to validate the proposed method. The integration process may face challenges in material growth and device fabrication.
1：Experimental Design and Method Selection:
The integration method involves growing gallium nitride on a sapphire substrate, making HEMT drive circuit by photolithography, etching, and other steps, and then integrating LED on the back.
2：Sample Selection and Data Sources:
GaN-based materials are used for both HEMT and LED.
3：List of Experimental Equipment and Materials:
Silvaco software for simulation, MOCVD for material growth, EBL and FIB for patterning and etching.
4：Experimental Procedures and Operational Workflow:
Growth of AlN buffer layer on sapphire substrate, followed by GaN and AlGaN for HEMT structure, patterning and etching, removal of sapphire substrate, and growth of LED structure on the back.
5：Data Analysis Methods:
Simulation results are analyzed to evaluate the integration method's feasibility.
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