修车大队一品楼qm论坛51一品茶楼论坛,栖凤楼品茶全国楼凤app软件 ,栖凤阁全国论坛入口,广州百花丛bhc论坛杭州百花坊妃子阁

oe1(光电查) - 科学论文

过滤筛选

出版时间
  • 2018
研究主题
  • Schottky diodes
  • frequency multipliers
  • submillimeter-wave technology
  • terahertz technology.
  • Submillimeter-wave sources
应用领域
  • Optoelectronic Information Science and Engineering
机构单位
  • California Institute of Technology
201 条数据
?? 中文（中国） ▾

  • [IEEE 2018 11th Global Symposium on Millimeter Waves (GSMM) - Boulder, CO, USA (2018.5.22-2018.5.24)] 2018 11th Global Symposium on Millimeter Waves (GSMM) - High-Resolution Antenna Near-Field Imaging and Sub-THz Measurements with a Small Atomic Vapor-Cell Sensing Element

    摘要： Atomic sensing and measurement of millimeter-wave (mmW) and THz electric fields using quantum-optical EIT spectroscopy of Rydberg states in atomic vapors has garnered significant interest in recent years towards the development of atomic electric-field standards and sensor technologies. Here we describe recent work employing small atomic vapor cell sensing elements for near-field imaging of the radiation pattern of a Ku-band horn antenna at 13.49 GHz. We image fields at a spatial resolution of λ/10 and measure over a 72 to 240 V/m field range using off-resonance AC-Stark shifts of a Rydberg resonance. The same atomic sensing element is used to measure sub-THz electric fields at 255 GHz, an increase in mmW-frequency by more than one order of magnitude. The sub-THz field is measured over a continuous ±100 MHz frequency band using a near-resonant mmW atomic transition.

    关键词： atom,microwave,electric field,metrology,quantum sensing,millimeter-wave,THz,antenna,mmW,Rydberg,terahertz,Atomic sensors,antenna characterization

    更新于2025-09-19 17:15:36

  • [IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - A 1.2-dB Noise Figure Broadband GaAs Low-Noise Amplifier with 17-dB Gain for Millimeter-Wave 5G Base-Station

    摘要： A 24-30GHz low-noise amplifier (LNA) with 1.2-dB noise figure (NF) is designed for millimeter-wave 5G stations. The LNA has 2 stages, 1st stage utilizes source degeneration inductor for simultaneous noise and input match. 2nd stage uses the same structure for staging match and the trade-off between gain and noise optimization. A structure of parallel resistor and capacitor is utilized for bandwidth and stability. Simulation result shows that the LNA achieves peak gain of 17.8-dB, and the 1-dB bandwidth is over 6-GHz. NF is below 1.35-dB in the bandwidth.

    关键词： low-noise amplifier,pHEMT,millimeter-wave,5G,GaAs,noise figure

    更新于2025-09-19 17:15:36

  • Performance improved tunable millimeter-wave signal generation employing UFBG based AOTF with bit walk-off effect compensation

    摘要： A scheme for the generation of mm-wave signals at different frequencies with improved performance is proposed and demonstrated by employing a uniform fiber Bragg grating based acousto-optic tunable filter (UFBG-AOTF). The different frequencies carry different information at a required data rate according to their application. This method reduces the complexity of the system by alleviating the cascaded Mach-Zehnder modulators (MZM) and a good transmission performance can be achieved by the FBG. In the previous system, the distance of transmission is reduced to 15 km due to bit walk-off effect and it also reduces the BER values at larger distances. In the proposed system, the bit walk-off effect is discussed and compensated to increase the transmission distance up to 60 km. The simulation results along with clear eye-diagrams show that the BER values are improved at larger distances than the previous system which proves the performance improvement of the proposed system.

    关键词： optical millimeter-wave,radio-over-fiber,bit walk-off effect,acousto-optic tunable filter,uniform fiber Bragg grating

    更新于2025-09-19 17:15:36

  • User scheduling for capacity-Jain’s fairness tradeoff in millimeter-wave MIMO systems

    摘要： This paper investigates user scheduling in millimeter-wave multiple-input multiple-output systems that can achieve a tradeoff between capacity and Jain’s fairness index. By decomposing the original problem into digital beamforming design, duration allocation, and analog beamforming design, each subproblem is solvable. It is proved that the duration allocation problem possesses a property such that the convex optimization algorithm can be employed for the near optimal result. Moreover, the analog beamforming vectors and the user grouping are designed to avoid interference caused by the reuse of the same subspace. Finally, the computational complexity of the proposed approach is analyzed and is compared with that of other approaches. The simulations verify that the proposed approach can achieve the highest fairness and a higher capacity than approaches of close fairness.

    关键词： Scheduling,MIMO systems,Millimeter-wave communication,Beams

    更新于2025-09-19 17:15:36

  • [IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Nanoscale Transfer Printing for the Heterogeneous Integration of Semiconductor Nanowire Lasers

    摘要： InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.

    关键词： millimeter wave photonics,frequency conversion,FETs,millimeter wave communication,InP,graphene,HEMTs,radio access networks

    更新于2025-09-19 17:13:59

  • Facile enhancement of optical sensitivity in GaN ultraviolet photodetectors by using in-situ plano-convex polymer lens

    摘要： InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.

    关键词： millimeter wave photonics,frequency conversion,FETs,millimeter wave communication,InP,graphene,HEMTs,radio access networks

    更新于2025-09-19 17:13:59

  • [IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Solution-processed ultrathin SnO <sub/>2</sub> passivation of Absorber/Buffer Heterointerface and Grain Boundaries for High Efficiency Kesterite Cu <sub/>2</sub> ZnSnS <sub/>4</sub> Solar Cells

    摘要： InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.

    关键词： millimeter wave photonics,radio access networks,graphene,FETs,HEMTs,InP,millimeter wave communication,frequency conversion

    更新于2025-09-19 17:13:59

  • [IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Numerical modeling and experimental realization of wide bandgap ZnTe-based solar cells for semi-transparent PV application

    摘要： InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.

    关键词： millimeter wave photonics,radio access networks,graphene,FETs,HEMTs,InP,millimeter wave communication,frequency conversion

    更新于2025-09-19 17:13:59

  • [IEEE 2019 International Vacuum Electronics Conference (IVEC) - Busan, Korea (South) (2019.4.28-2019.5.1)] 2019 International Vacuum Electronics Conference (IVEC) - Design of D-band Double Corrugated Waveguide TWT for Wireless Communications

    摘要： The European Commission Horizon 2020 ULTRAWAVE, “Ultra capacity wireless layer beyond 100 GHz based on millimeter wave Traveling Wave Tubes”, aims to exploit portions of two frequency bands in the millimetre wave spectrum, the D-band (141 – 148.5 GHz) and the G-band (275 – 305 GHz) for creating a very high capacity layer. Due to the high atmosphere and rain attenuation, high transmission power is needed to provide a useful transmission range. Traveling Wave Tubes are the only devices that can provide the multi-Watt transmission power above 100 GHz. In this paper, the design of the Double Corrugated Waveguide (DCW), as slow wave structure, for a novel D-band TWT, for wireless communications, will be described.

    关键词： Double corrugated waveguide,traveling wave tube,5G,Millimeter wave networks

    更新于2025-09-19 17:13:59

  • Real‐Time Three‐Dimensional Imaging of Dielectric Bodies Using Microwave/Millimeter‐Wave Holography || Microwave/Millimeter Wave Holography Based on the Concepts of Optical Holography

    摘要： Holographic imaging was first introduced in the field of optics in the late forties, when Gabor aimed at improving the quality of the images in electron microscopy. He proposed an approach to capture the magnitude and phase of a wave by means of an interference pattern formed by that wave and a known reference wave. He also developed the mathematical approach to the image reconstruction from such interference patterns. Later, in the early sixties, Leith and Upatnieks improved Gabor’s experimental setup. In their method, the reference wave is a distinct beam separated from the illuminating beam by using a beam splitter. The reference beam travels at a substantial angle to the illuminating beam and is so inclined as to never illuminate the object. This new method of providing the reference wave led to separation of the overlapping images originally produced in Gabor’s experimental setup in which the reference and object waves were nearly parallel. As a result of the work of Leith and Upatnieks, higher quality images were obtained. Since then the holography method has significantly influenced optics. In general, since optical recording media such as photographic films only respond to intensity, optical holography is applied as an indirect means of capturing the phase information of the optical wave fronts. It is implemented in two steps. The first step is the hologram formation step and the second step is the wave front reconstruction step.

    关键词： optical holography,microwave holography,holography,wave front reconstruction,millimeter wave holography

    更新于2025-09-19 17:13:59