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Composition and Strain Evolution of Undoped Si <sub/>0.8</sub> Ge <sub/>0.2</sub> Layers Submitted to UV-Nanosecond Laser Annealing
摘要： Ultraviolet Nanosecond Laser Annealing (UV-NLA, XeCl laser, 308 nm, 145 ns) was performed on 30 nm-thick Si0.8Ge0.2 epitaxial layers. The various regimes encountered after single pulse UV-NLA are described and discussed, including submelt, SiGe layer partial and total melt, as well as melt beyond the SiGe epi-layer. Energy densities around 2.00 J/cm2 and above led to the formation of pseudomorphic layers with strong Ge redistribution. Starting from uniform Si0.8Ge0.2 layers, Ge segregation towards the surface resulted in the formation of a Ge-rich surface layer with up to 55% Ge for 2.00 J/cm2. Such pseudomorphic SiGe layers with graded composition and a Ge-rich surface layer may find some promising applications such as contact resistance lowering in doped layers.
关键词： SiGe,pseudomorphic,contact resistance,Ge redistribution,Ultraviolet Nanosecond Laser Annealing
更新于2025-11-14 14:32:36
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Dopant Activation of In Situ Phosphorusa??Doped Silicon Using Multia??Pulse Nanosecond Laser Annealing
摘要： Nanosecond laser annealing was performed on ISPD silicon in single- and multi-pulse modes. the active phosphorus concentration was increased with the laser power density and number of laser pulses and more phosphorus was activated with nanosecond lasers than with millisecond lasers. Moreover, almost all the incorporated phosphorus atoms were activated by the nanosecond laser without major strain loss when ISPD silicon melt
关键词： phosphorus-doped silicon,nanosecond laser annealing,diffusion,dopant activation,strain
更新于2025-09-23 15:19:57
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Ultraviolet Nanosecond Laser Annealing for Low Temperature 3D-Sequential Integration Gate Stack
摘要： For the top tier in a 3D sequential integration, we propose a low temperature gate first approach in which an in-situ doped amorphous silicon layer is deposited at 475°C then subsequently converted into a polycrystalline film using ultraviolet nanosecond laser annealing. We demonstrate the ability to obtain a low resistance poly-Si gate for the top transistors within a thermal budget expected to preserve the bottom devices electrical performance.
关键词： Ultraviolet Nanosecond Laser Annealing,Polycrystalline Silicon,3D-Sequential Integration,Low Temperature Gate Stack
更新于2025-09-16 10:30:52
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Recrystallization and activation of ultra-high-dose phosphorus-implanted silicon using multi-pulse nanosecond laser annealing
摘要： Highly phosphorus-doped silicon source/drains are investigated to improve the performance of N-type metal-oxide-semiconductor field-effect transistors by decreasing their resistance and imparting strain to their channels. To find effective high temperature annealing for the activation of phosphorus in the source/drains, we apply single- and multi-pulse nanosecond laser annealing on highly phosphorus-doped silicon. The microstructure, strain, and electrical properties of highly phosphorus-doped silicon before and after laser annealing are analyzed. Our results demonstrate that the defects in both the recrystallized silicon and the end of range are decreased with 600 mJ cm?2 10-pulse annealing while considerable increase in phosphorus activation is achieved.
关键词： nanosecond laser annealing,strain engineering,activation,phosphorus-doped silicon,recrystallization
更新于2025-09-16 10:30:52