研究目的
Investigating the effects of nanosecond laser annealing on the activation efficiency of phosphorus in in situ phosphorus-doped (ISPD) silicon films, including diffusion, strain, microstructure, and electrical properties.
研究成果
Nanosecond laser annealing increased the active phosphorus concentration in ISPD silicon without significant diffusion or strain loss. The active concentration was higher than that achieved with millisecond laser annealing, especially in the partial-melting region. Almost all incorporated phosphorus atoms were activated in the total-melting region.
研究不足
The study is limited to ISPD silicon films grown on (100) silicon wafers. The effects on ISPD layers grown from (111) surfaces, as in real 3D devices, were not investigated.
1：Experimental Design and Method Selection:
Nanosecond laser annealing was performed on ISPD silicon films with varying phosphorus concentrations using single- and multi-pulse modes. The effects on diffusion, strain, microstructure, and electrical properties were examined.
2：Sample Selection and Data Sources:
ISPD silicon layers were epitaxially deposited on silicon wafers with phosphorus concentrations of 0.5%, 3.5%, and 6%.
3：5%, 5%, and 6%.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: A krypton fluoride (KrF) pulsed laser (Coherent COMPEX205, 248-nm wavelength, 24-ns pulse width) was used for annealing. Secondary-ion mass spectrometry (SIMS), X-ray diffractometry (XRD), transmission electron microscopy (TEM), and Hall effect measurements were used for analysis.
4：Experimental Procedures and Operational Workflow:
Laser annealing was performed at energy densities of 300–700 mJ?cm?2. The samples were analyzed for phosphorus distribution, strain, microstructure, and electrical properties.
5：The samples were analyzed for phosphorus distribution, strain, microstructure, and electrical properties.
Data Analysis Methods:
5. Data Analysis Methods: The melting depth was simulated using ANSYS software. Phosphorus profiles were analyzed via SIMS, strain via XRD, microstructure via TEM, and electrical properties via Hall effect measurements.
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