1：Experimental Design and Method Selection:

UV-Nanosecond Laser Annealing (UV-NLA) was performed on 30 nm-thick Si0.8Ge0.2 epitaxial layers using a XeCl laser (308 nm wavelength and ~145 ns Full Width at Half Maximum pulse duration).

2：8Ge2 epitaxial layers using a XeCl laser (308 nm wavelength and ~145 ns Full Width at Half Maximum pulse duration). Sample Selection and Data Sources:

2. Sample Selection and Data Sources: 30 nm-thick pseudomorphic Si0.8Ge0.2 layers were grown on n-type Si (100) substrates by Reduced Pressure Chemical Vapor Deposition (RPCVD).

3：8Ge2 layers were grown on n-type Si (100) substrates by Reduced Pressure Chemical Vapor Deposition (RPCVD). List of Experimental Equipment and Materials:

3. List of Experimental Equipment and Materials: SCREEN-LT3100 system based on a XeCl laser, ASM Epsilon 3200 reactor, SP2 tool from KLA Tencor, Dimension FastScan system from Bruker, X’Pert Pro PANalytical tool, ION TOF ToF-SIMS 5 system, TECNAI OSIRIS.

4：Experimental Procedures and Operational Workflow:

Samples underwent pulsed laser annealing at various energy density values, ranging from 1.40 to 2.40 J/cm2. In-situ Time-Resolved Reflectivity (TRR) was used to detect the melt threshold and melt duration. Surface roughness and strain were studied by Haze measurements, AFM, HR-XRD, and ToF-SIMS.

5：40 to 40 J/cm2. In-situ Time-Resolved Reflectivity (TRR) was used to detect the melt threshold and melt duration. Surface roughness and strain were studied by Haze measurements, AFM, HR-XRD, and ToF-SIMS. Data Analysis Methods:

5. Data Analysis Methods: Data were analyzed using statistical techniques and software tools for HR-XRD, ToF-SIMS, and TEM observations.