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European Microscopy Congress 2016: Proceedings || Insight on the fine structure of semiconductor nanowires down to single atom detection: correlation to their physical properties
摘要： Nanotechnology allows modifying the structure of nanoobjects down to the atomic scale. Low dimensional quantum structures can be embedded in a nanowire system in order to modify its properties at will. Electronic and optoelectronic devices benefit from the new advances in growth methodologies, with a fine control of the elemental species locally deposited. In the present work, we will present how an accurate knowledge on the atomic positions, down to single atom detection, may help to deeply understand the improved properties of our complex nanowire heterostructures. We will show how from scanning transmission electron microscopy (STEM), it is possible to obtain precise 3D atomic models that can be used as input for the simulation of its physical properties. Finally, these theoretical properties will be cross-correlated to the experimental measurements obtained locally on our nanowire systems. Some of the presented works will include: the effect of the isotope distribution on the phononic behavior of nanowires, the measurement of the internal electric fields in quantum structures and the influence of doping on the compensation of the polarization field, or the influence of polarity and the atomic arrangement on the photonic and electronic properties of single heterostructured nanowires.
关键词： polarity,physical properties,atomic scale,non-planar nanostructures,Semiconductor Nanowires
更新于2025-09-10 09:29:36
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hybride nanowire networks prepared by electrospinning
摘要： We prepared La1.85Sr0.15CuO4/La0.7Sr0.3MnO3 nanowire network hybrid systems by means of electrospinning. From obervation by scanning electron microscopy, the average diameter of the nanowires is around 220 nm and the average length can reach over 50 μm. The randomly aligned La1.85Sr0.15CuO4 and La0.7Sr0.3MnO3 nanowires exhibit numerous interconnects among each other and form a complicated, non woven hybrid network system. The nanowires are polycrystalline with a grain size at around 30 nm as con?rmed by transmission electron microscopy. According to four-probe electrical transportation and magnetization measurements, superconductivity of the sample is suppressed and a positive magnetoresistance e?ect is observed. Measurements of M(T ) and M(H) were carried out as well, revealing the soft magnetic character of the hybrid nanowire network samples.
关键词： LSCO,electrospinning,nanowires,LSMO,magnetization,magnetoresistance,hybrid network
更新于2025-09-10 09:29:36
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Growth of ZnSe nanowires on quartz substrates and their photomodulated transmittance spectra
摘要： ZnSe nanowires were grown on fused quartz substrates by a vapor transport method in which the ZnSe powder is heated at 1100?C in a tube of the furnace. The scanning electron microscopy images showed that the nanowires have the average diameter of ～110 nm. The X-ray di?raction measurement indicates that the ZnSe nanowires were a single phase of zinc-blende ZnSe. The photomodulated transmittance (PT) measurements were performed for the ZnSe nanowires at temperatures between 15 and 300 K. The measured PT spectra revealed distinct structures of E0 critical point at ～2.6?2.8 eV. This E0 critical point structure was successfully explained by adding an excitonic line shape to a one-electron line shape. The temperature dependence of E0 energy was analyzed using an analytical formula that takes into account the band-gap shrinkage e?ect by the electron-phonon interaction in semiconductors. The exciton binding energy of ZnSe nanowires was determined to be 20 meV.
关键词： Photomodulated transmittance,Crystal growth,ZnSe nanowires
更新于2025-09-10 09:29:36
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A demonstration of the mechanical sensing capability of individually contacted vertical piezoelectric nanowires arranged in matrices
摘要： This paper reports the fabrication of arrays of vertical piezoelectric nanowires which are individually contacted at their base, and demonstrates that an electrical response to strain can be obtained from individual nanowires from the array, without external biasing exploiting the piezotronic effect. Such a technology could thus be used for the fabrication of self-powered sensors for mechanical strain mapping, where each individually contacted nanowire would act as the strain sensing equivalent of a pixel. Lateral mapping resolutions in the micrometer range can be obtained. Here, the hydrothermal method was used to grow vertical ZnO nanowires selectively between two electrodes that had been patterned beforehand. For the sake of demonstration, nanowires deflection was produced by subjecting the array of nanowires to an incident lateral gas flow of controlled rate, which was switched on and off repeatedly across the sample while electrical response was measured. Different experimental configurations were tested in terms of flow rate, flow orientation, or nanowire position with respect to tube outlet. Experiments were carried out with compressed nitrogen and air. The experimental results are fully consistent with the piezoelectric and piezotronic response which can be expected with this geometry. Moreover, it is shown that the electrical response under nitrogen flow is a linear function of flow rate and that its sign provides information about flow direction. These results demonstrate the very promising prospects of this new technology for high-resolution mapping, with potential applications in gas or liquid flow sensing, fingerprints detection or human-machine interfaces.
关键词： Mechanical sensor,Piezotronics,Microfabrication,Strain mapping,ZnO nanowires
更新于2025-09-10 09:29:36
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Assembly of β-SiC Nanowires film and humidity sensing performance
摘要： β‐SiC materials have been seen as the third‐generation semiconductor widely used in kinds of photoelectric device, high temperature electronics, and other fields. Compared with ordinary semiconductors, β‐SiC materials have huge potential application in replacing monocrystalline silicon in extreme environments because of their numerals extraordinary chemical and physical properties. Based on this, β‐SiC nanowires obviously are more desirable in any way. Here, we present a modified chemical vapor deposition (CVD) method to synthesis β‐SiC nanowires, which needs no protect gas, and transfer it to Si/SiO2 substrates equipped with Au electrodes. The microstructure of the as‐prepared samples is tested by field emission scanning electron microscopy (FESEM). The humidity sensing performance of electronic device is measured by electrochemical workstation test equipment. It shows that the resistance of β‐SiC nanowires increases with increasing environment humidity within very short response/recovery time‐0.5 seconds/0.5 seconds and also performs excellent cycling stability. Such advantage superiorities make it highly possible to apply β‐SiC nanowires into various environments.
关键词： β-SiC nanowires,CVD,electrodes,humidity sensing
更新于2025-09-10 09:29:36
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Characterizing the electrical breakdown properties of single n-i-n-n <sup>+</sup> :GaN nanowires
摘要： The electrical transport properties and breakdown behaviors of single n-i-n-nt GaN nanowires (NWs) are investigated through in-situ nanoprobing inside a scanning electron microscope (SEM). The nanoprobing contact resistance is dramatically reduced by increasing the Si-doping concentration of the top nt-GaN segment of the NW. The dependence of the NW breakdown parameters (i.e., breakdown voltage, power, and current density) on the nt-GaN Si-doping concentration and the NW diameter is experimentally quanti?ed and explained by the localized thermal decomposition mechanism of the NW. Enabled by the low NW-nanoprobe contact resistance, a breakdown current density of 4.65 MA/cm2 and a breakdown power of 96.84 mW are achieved, both the highest among the previously reported results measured on GaN NWs.
关键词： Si-doping,electrical breakdown,GaN nanowires,thermal decomposition,nanoprobing
更新于2025-09-10 09:29:36
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Fabrication and Properties of Silver Nanowire Flexible Transparent Electrode
摘要： Transparent electrodes with high transmittance and high conductivity are important components in display devices. Silver nanowires (AgNWs) are considered as the most promising new electrode materials because of the low cost and high conductivity, especially in flexible displays. In this paper, we first synthesized silver nanowires as electrode materials using the polyol method. Secondly, the silver nanowires were spin-coated on glass substrates and nanopaper to produce transparent electrodes. Finally, the properties of two types of transparent electrodes were investigated, including surface morphology, UV spectrum, square resistance, and light transmittance.
关键词： silver nanowires,nanopaper,transparent electrode,flexible
更新于2025-09-10 09:29:36
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Synthesis of copper oxide nanowires with an emphasis on analyzing the effect of oxidation time on the growth of nanowires
摘要： Copper nanowires offers a wide variety of applications in domains like electronics, energy harvesting and heat transfer. Here, spherical copper has been thermally oxidized to produce nano-wired particles. The length and diameter of these CuO nanowires are in the range of approximately 3–15 μm and 100–300 nm respectively. SEM images of the oxidized copper particles were examined to understand the effect of oxidation time on the length and population density of the nanowire. Oxidation times were set from 15 min to 4 h. We report a direct relation between oxidation time and the population density of the nanowires. An increase in length of the wires was observed up to an oxidation time of 3 h, however, further increase in oxidation time did not signi?cantly contribute to an increased length of nanowires. XRD and TGA was performed to identify the phases of CuO and oxidation rate of Cu respectively.
关键词： thermal oxidation,copper nanowires,metal oxides,copper oxide nanowires
更新于2025-09-09 09:28:46
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[Nanostructure Science and Technology] Nanowire Electronics || Properties Engineering of III–V Nanowires for Electronic Application
摘要： Semiconductors have been the core materials of many technological advances in recent years. Silicon, the most studied and used semiconducting material, has been the center of semiconductor industry for decades because it is available abundantly and easy to dope, and silicon dioxide is a superior dielectric material in microelectronic industry. This material can be used to make computer chips, optoelectronics devices, and solar cell. Silicon reshapes the way we live and is unarguably one of the most important materials in modern society. Through its dominant role in the semiconductor industry for now, the search for alternatives is fueled by the unstoppable demand for high-performance and low-power electronics. Among different kinds of semiconductors, III–V semiconductor holds promising properties for replacing silicon, and in particular, the NW structure of III–V semiconductor has been studied extensively.
关键词： nanowire field-effect transistor,semiconductors,contact engineering,crystal engineering,III–V nanowires,surface modification,electronic application
更新于2025-09-09 09:28:46
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Charge transport in GaAs nanowires: Interplay between conductivity through the interior and surface conductivity
摘要： The charge transport through GaAs nanowires, partially p-doped and partially intrinsic, is analyzed by four-point resistance profiling along freestanding nanowires using a multip-STM. The charge transport channel in the undoped segment is assigned to the surface conductivity, while the interior of the nanowire is the conductance channel in the p-doped segment. The convoluted interplay between conduction through the interior of the nanowire and surface state conduction is studied in detail. Measurements of the I-V curves along the nanowires provide the experimental basis for the proposed charge transport model for the transition of the conduction from the interior to the surface of the nanowire. A voltage drop along the surface state conduction channel leads to an upward shift of the band edges at the surface. This results, for higher applied voltages, in the removal of the depletion layer and an opening of a conductance channel between the interior of the nanowire and the surface states.
关键词： GaAs nanowires,surface conductivity,multip-STM,charge transport,four-point resistance profiling
更新于2025-09-09 09:28:46