研究目的
Investigating the electrical transport properties and breakdown behaviors of single n-i-n-nt GaN nanowires (NWs) through in-situ nanoprobing inside a scanning electron microscope (SEM).
研究成果
The study provides an experimental guideline on how to improve the electrical properties of GaN NWs grown on Si substrates for constructing high-performance electronics. By tuning the Si-doping concentration of the nt-GaN segment, a NW breakdown current density of 4.65 MA/cm2 and a breakdown power of 96.84 mW were achieved, both the highest among the previously reported results from GaN NWs.
研究不足
The study is limited to the electrical breakdown properties of single n-i-n-nt GaN NWs and does not explore the performance of GaN-NW-based devices under operational conditions.
1：Experimental Design and Method Selection:
In-situ nanoprobing inside a SEM was employed to investigate the electrical transport properties and breakdown behaviors of single n-i-n-nt GaN NWs.
2：Sample Selection and Data Sources:
Single n-i-n-nt GaN NWs grown on an n-Si substrate using a radio frequency plasma-assisted MBE system.
3：List of Experimental Equipment and Materials:
SEM (Quanta 450 FEG, FEI), nanomanipulator (LF-2000, Toronto Nanoinstrumentation Inc.), precision source meter (SMU 2400, Keithley), Pt-coated tungsten nanoprobe (ST-20–
4：5, GGB Industries). Experimental Procedures and Operational Workflow:
Two-point electrical in-situ nanoprobing of the as-grown single n-i-n-nt GaN NWs inside a SEM.
5：Data Analysis Methods:
The resistance values of individual GaN NW were calculated from the slopes of the linear regions of the I-V curves.
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