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[IEEE 2018 IEEE Photonics Conference (IPC) - Reston, VA, USA (2018.9.30-2018.10.4)] 2018 IEEE Photonics Conference (IPC) - Crack-Free Silicon-Nitride-on-Insulator Nonlinear Circuits for Continuum Generation in the C-Band
摘要： We report on the fabrication and testing of silicon-nitride-on-insulator nonlinear photonic circuits for complementary metal–oxide–semiconductor (CMOS) compatible monolithic co-integration with silicon-based optoelectronics. In particular, a process has been developed to fabricate low-loss crack-free Si3N4 730-nm-thick ?lms for Kerr-based nonlinear functions featuring full process compatibility with existing silicon photonics and front-end Si optoelectronics. Experimental evidence shows that 2.1-cm-long nanowires based on such crack-free silicon nitride ?lms are capable of generating a frequency continuum spanning 1515–1575 nm via self-phase modulation. This work paves the way to time-stable power-ef?cient Kerr-based broad-band sources featuring full process compatibility with Si photonic integrated circuits on CMOS lines.
关键词： frequency continuum,photonic integrated circuits (PICs),Complementary metal–oxide–semiconductor (CMOS),nonlinear optics,silicon-nitride-on-insulator (SiNOI)
更新于2025-09-23 15:21:01
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Enhancing electrostatic coupling in silicon quantum dot array by dual gate oxide thickness for large-scale integration
摘要： We propose a structure with word/bit line control for a two-dimensional quantum dot array, which allows random access for arbitrary quantum dots with a small number of control signals. To control multiple quantum dots with a single signal, every quantum dot should have a wide operating voltage allowance to overcome the property variations. We fabricate two-dimensional quantum dot arrays using silicon-complementary-metal-oxide-semiconductor technology with an alternating dual-standard gate oxide thickness. The quantum dots are designed to have an allowable operating voltage window of 0.2 V to control the number of electrons, which is a window one order of magnitude wider than that of previous works. The proposed structure enables both easy fabrication and operation for multiple quantum dots and will pave the way for practical use of large-scale quantum computers.
关键词： electrostatic coupling,dual gate oxide thickness,quantum dot array,large-scale integration,silicon-complementary-metal-oxide-semiconductor technology
更新于2025-09-23 15:19:57
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Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique
摘要： This paper presents the interface analysis and band offset of Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterostructures with diffusion-controlled interface oxidation (DCIO) treatment. After conventional surface pre-treatment with wet cleaning and nitridation plasma, 1 nm Al2O3 was prepared with atomic layer deposition, followed by in situ plasma-assisted interface oxidation for 30 min. The interface oxidation process is limited by oxidant diffusion through the pre-deposited Al2O3 layer, contributing to the formation of high quality crystalline interfacial oxide layer. For MOS heterostructures with 24.1 nm Al2O3, a positive threshold voltage shift by 1.8 V was obtained by using DCIO technique. The energy band structures and band offset at Al2O3/AlGaN interface was investigated with X-ray photoelectron spectroscopy (XPS). XPS results show that DCIO treatment causes an increase in conduction band offset from 2.29±0.37 eV to 2.92±0.36 eV. There is also a decrease in Al2O3 band slope, indicating a decrease in internal electrical field strength and interface charges. The Al2O3 energy band for these two cases may also cross with each other at a certain point, defining the critical thickness of gate oxide. Generally, the decrease in interface charges by DCIO causes a positive voltage shift, while the voltage shit will change sign with Al2O3 thickness smaller than the critical value. The MOS heterostructures with and without DCIO exhibit very nice relations between threshold voltage and Al2O3 thickness, giving a critical oxide thickness about 1 nm. DCIO results in a decrease in the slope of linear function by about 0.08 V/nm, indicating the reduced interface charges by 3.96×1012 cm-2.
关键词： metal-oxide-semiconductor,GaN,interface oxidation
更新于2025-09-23 15:19:57
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Organic-inorganic hybrid heterostructures towards long-wavelength photodetectors based on InGaZnO-Polymer
摘要： Organic-inorganic hybrid heterostructures have attracted considerable attentions due to their wide application in electronics and optoelectronics. In this study, a high-performance red light photodetector based on organic-inorganic heterostructure was successfully fabricated after a systematical optimization in material and device constitution. The conjugated polymer (P(PDI-BDT-O)) with narrow band gap used as light absorber was combined with a layer of indium gallium zinc oxide (IGZO) to construct a bi-layered phototransistor achieving a high mobility as well as high photoresponsivity. Benefiting from both the high absorption coefficient of the polymer over a wide range of wavelength and the perfect matching of band level between polymer and IGZO, the device exhibits an ultrahigh photoresponsivity (212 A/W) and specfic detectivity (2 ? 1012 Jones) for red light at the wavelength of 633 nm. These results demonstrate the great potential of organic-inorganic heterostructures in the application of long-wavelength photodetectors.
关键词： Conjugated polymer,Oxide semiconductor,Organic-inorganic heterostructures,Red light photodetector
更新于2025-09-23 15:19:57
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Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications
摘要： The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec?1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.
关键词： tin oxide,thin-film transistor,aluminum doping,adhesive property,oxide semiconductor
更新于2025-09-19 17:15:36
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Carbon Nanotube Complementary Gigahertz Integrated Circuits and Their Applications on Wireless Sensor Interface Systems
摘要： Along with ultralow-energy delay products and symmetric complementary polarities, carbon nanotube field-effect transistors (CNT FETs) are expected to be promising building blocks for energy-efficient computing technology. However, the work frequencies of the existing CNT-based complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) are far below the requirement (850 MHz) in state-of-art wireless communication applications. In this work, we fabricated deep submicron CMOS FETs with considerably improved performance of n-type CNT FETs and hence significantly promoted the work frequency of CNT CMOS ICs to 1.98 GHz. Based on these high-speed and sensitive voltage-controlled oscillators, we then presented a wireless sensor interface circuit with working frequency up to 1.5 GHz spectrum. As a preliminary demonstration, an energy-efficient wireless temperature sensing interface system was realized combining a 150 mAh flexible Li-ion battery and a flexible antenna (center frequency of 915 MHz). In general, the CMOS-logic high-speed CNT ICs showed outstanding energy efficiency and thus may potentially advance the application of CNT-based electronics.
关键词： complementary metal-oxide semiconductor,sensor interface,voltage-controlled oscillators,field-effect transistors,carbon nanotube film
更新于2025-09-19 17:15:36
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Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
摘要： This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epitaxial layers. Samples were then characterized through micro-Raman spectroscopy, Photoluminescence (PL) and Transmission Electron Microscopy (TEM) and results were compared with those coming from P implanted thermally annealed samples at 1650–1700–1750 °C for 30 min. The activity outcome shows that laser annealing allows to achieve full crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Moreover, laser treated crystal shows an almost stress-free lattice with respect to thermally annealed samples that are characterized by high point and extended defects concentration. Laser annealing process, instead, allows to strongly reduce carbon vacancy (VC) concentration in the implanted area and to avoid intra-bandgap carrier recombination centres. Implanted area was almost preserved, except for some surface oxidation processes due to oxygen leakage inside the testing chamber. However, the results of this experimental activity gives way to laser annealing process viability for damage recovery and dopant activation inside the implanted area.
关键词： ion implantation,phosphorus,point defects,laser annealing,photoluminescence,aluminum,TEM,Metal Oxide Semiconductor Field Effect Transistor (MOSFET),SiC,Raman
更新于2025-09-19 17:13:59
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[IEEE 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Xiamen, China (2019.12.17-2019.12.20)] 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Plasmonic Band-pass/stop Filters Based on Metal-Insulator-Metal Slit Waveguides
摘要： Nanoelectronics comprises a variety of devices whose electrical properties are more complex as compared to CMOS, thus enabling new computational paradigms. The potentially large space for innovation has to be explored in the search for technologies that can support large-scale and high-performance circuit design. Within this space, we analyze a set of emerging technologies characterized by a similar computational abstraction at the design level, i.e., a binary comparator or a majority voter. We demonstrate that new logic synthesis techniques, natively supporting this abstraction, are the technology enablers. We describe models and data-structures for logic design using emerging technologies and we show results of applying new synthesis algorithms and tools. We conclude that new logic synthesis methods are required to both evaluate emerging technologies and to achieve the best results in terms of area, power and performance.
关键词： logic expressive power,nanotechnology,emerging devices,enhanced functionality,CMOS,Beyond-complementary metal-oxide semiconductor (CMOS),CAD for nanotechnology,logic synthesis
更新于2025-09-19 17:13:59
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[IEEE 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Rome, Italy (2019.6.17-2019.6.20)] 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Graphene Based Tunnel Field Effect Transistor for RF Applications
摘要： Nanoelectronics comprises a variety of devices whose electrical properties are more complex as compared to CMOS, thus enabling new computational paradigms. The potentially large space for innovation has to be explored in the search for technologies that can support large-scale and high-performance circuit design. Within this space, we analyze a set of emerging technologies characterized by a similar computational abstraction at the design level, i.e., a binary comparator or a majority voter. We demonstrate that new logic synthesis techniques, natively supporting this abstraction, are the technology enablers. We describe models and data-structures for logic design using emerging technologies and we show results of applying new synthesis algorithms and tools. We conclude that new logic synthesis methods are required to both evaluate emerging technologies and to achieve the best results in terms of area, power and performance.
关键词： logic expressive power,CMOS,CAD for nanotechnology,Beyond-complementary metal-oxide semiconductor (CMOS),enhanced functionality,nanotechnology,logic synthesis,emerging devices
更新于2025-09-19 17:13:59
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Morphology correlated efficiency of ZnO photoanode in dye sensitized solar cell
摘要： We synthesized facile novel morphology of ZnO as nanobeads and hierarchical nanosheet ball by chemical bath deposition method. The ZnO nanobeads and hierarchical nanosheet ball exhibited band gap of 3.12 and 3.23 eV, respectively. The X-ray diffraction patterns indicated crystal structure of ZnO nanobeads and hierarchical nanosheet ball are same however, sintering induced slight compressive stress on ZnO leads to small shift in diffraction angles. Four fold increase in ef?ciency was obtained with ZnO hierarchical nanosheet ball as photoanode in DSSC in comparison to ZnO nanobeads.
关键词： Chemical bath deposition method,morphology variation,metal oxide semiconductor
更新于2025-09-19 17:13:59