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[IEEE 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Chengdu, China (2018.5.7-2018.5.11)] 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - A Broadband 1-dB Noise Figure GaAs Low-Noise Amplifier for Millimeter-Wave 5G Base-Stations
摘要： A broadband low-noise amplifier (LNA) with sub-1 dB noise figure (NF), intended for use in millimeter-wave 5G base-stations, have been fabricated in 0.1-μm InGaAs pHEMT technology. Common-source topology with inductive source degeneration is utilized for simultaneous noise and input match. Measurement results show this LNA achieves a gain of 7.9 dB at 24-GHz and a -1 dB bandwidth of 5-GHz, while consuming 13 mW from a 1-V supply. The noise figure is below 1.5 dB from 21-GHz to 27-GHz, with a lowest noise figure of 0.7 dB at 26-GHz.
关键词： millimeter-wave,noise figure,pHEMT,5G,low-noise amplifier,GaAs
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE 5G World Forum (5GWF) - Silicon Valley, CA, USA (2018.7.9-2018.7.11)] 2018 IEEE 5G World Forum (5GWF) - Packaged High Power Frond-End Module for Broadband 24GHz & 28GHz 5G solutions
摘要： This paper presents realization and characteristics of broadband plastic low cost packaged 5G High Power Frond-End (HPFE) operating in 24-31GHz bandwidth. This demonstrator includes a Transmit and Receive paths realized on mixed technologies: 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC) and 150nm Gallium Arsenide (GaAs). Continuous Wave (CW) measured power results of the Transmit path (Tx) demonstrates a maximum output power (POUT,Tx) higher than 2W (33.5dBm) with 25% drain efficiency (DE), 24% power added efficiency (PAE), and 36dB of insertion gain (GI,Tx) in the 24-31GHz bandwidth. The receiver path (Rx) presents an maximum output power (POUT,Rx) of 30mW (15.5dBm) and an average Noise Figure (NF) of 3.6dB with an associated Insertion Gain (GI,Rx) of 20dB in the same bandwidth. The HPFE/Tx linearity has been investigated with several M-QAM modulation signals with 25/50 and 100MHz channel spacing and using Digital Pre-Distortion (DPD) leading to 48dBc Adjacent Channel Leakage Ratio (ACLR) and 40dB Mean Squared Error (MSE) for average output powers ranging from linearity performances have been 17dBm to 25dBm. The compared to the ones obtained with two other linear GaAs amplifiers to point telecommunications application: the HPFE presents similar linearity performances associated to a higher efficiency. Thanks to the mixed technologies approach, an optimized trade-off in terms of integration, electrical performances and cost has been demonstrated.
关键词： MMIC,PHEMT,Gallium Arsenide,Plastic packaging,Transmit/Receive path,Low Noise Amplifier,Gallium Nitride,Power Amplifier,Switch
更新于2025-09-23 15:21:01
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A broadband GaAs pHEMT low noise driving amplifier with current reuse and self-biasing technique
摘要： A K/Ka-band two-stage low noise driving ampli?er using a 0.15 lm GaAs pHEMT for low noise technology is designed and fabricated. In order to achieve broadband driving capability with low power consumption, current reuse technique is adopted to feed both transistors with the same DC power supply, which theoretically cuts the total current consumption in half. In addition, self-biasing technique is utilized to minimize both external power supply pads and chip footprint, which reduces the number of supply pads to a minimum of two (1 power pad and 1 ground pad). The circuit topology analysis and design procedures are also presented with an emphasis on noise ?gure and P1dB optimization. The low noise driving ampli?er demonstrates a - 3 dB bandwidth of wider than 11 GHz, a power gain of 17 dB, an in-band mean noise ?gure of 2.2 dB and an in-band mean output P1dB of 6 dBm. The DC power consumption is 9.1 mA@3.3 V power supply. The chip size is 1 mm 9 1.5 mm with only 1 external DC feed pad (3.3 V) and 1 ground pad (0 V). With the performance comparable to typical two-stage dual-bias low noise driving ampli?er counterparts, the proposed MMIC is more attractive to chip/system users in volume-limited and power-contrained applications.
关键词： Ka-band,Pseudomorphic high electron mobility transistor (pHEMT),GaAs,Low noise driving ampli?er,Monolithic microwave integrated circuit (MMIC)
更新于2025-09-19 17:15:36
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[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - A 1.2-dB Noise Figure Broadband GaAs Low-Noise Amplifier with 17-dB Gain for Millimeter-Wave 5G Base-Station
摘要： A 24-30GHz low-noise amplifier (LNA) with 1.2-dB noise figure (NF) is designed for millimeter-wave 5G stations. The LNA has 2 stages, 1st stage utilizes source degeneration inductor for simultaneous noise and input match. 2nd stage uses the same structure for staging match and the trade-off between gain and noise optimization. A structure of parallel resistor and capacitor is utilized for bandwidth and stability. Simulation result shows that the LNA achieves peak gain of 17.8-dB, and the 1-dB bandwidth is over 6-GHz. NF is below 1.35-dB in the bandwidth.
关键词： low-noise amplifier,pHEMT,millimeter-wave,5G,GaAs,noise figure
更新于2025-09-19 17:15:36
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[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - f <sub/>max</sub> =800 GHz with 75 nm gate length and asymmetric gate recess for InGaAs/InAlAs PHEMT
摘要： In This paper, we present a high maximum frequency of oscillation (fmax) and a current-gain cutoff frequency (fT) of 800 GHz and 260 GHz respectively with pseudomorphic high-electron mobility transistor (PHEMT), using a composite, InGaAs/InAs/InGaAs channel and an asymmetric gate recess. This result was achieved with long gate length LG = 75 nm. The noise performance has been explored until 110 GHz, and gives a minimum noise figure NFmin = 0.8 dB (1.8 dB) with associated gain Gass = 16 dB (11.6 dB) at 40 GHz (94 GHz). Moreover extending the drain recess length to 225 nm and reducing the gate to source distance by 200 nm allows a fmax = 1.2 THz.
关键词： noise performance,InGaAs/InAs/InGaAs channel,asymmetric gate recess,PHEMT,high frequency
更新于2025-09-16 10:30:52
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Microwave Linear Characterization Procedures of On-Wafer Scaled GaAs pHEMTs for Low-Noise Applications
摘要： This contribution deals with the microwave linear characterization and noise figure measurement of four on-wafer GaAs pseudomorphic high-electron mobility transistors having scaled gate widths. The proposed measurement campaign has been fulfilled in two different laboratories: The University of Messina, Italy and US Naval Research Laboratory, Washington, DC, USA. Two equivalent approaches have been straightforwardly employed: a standard tuner-based technique and a novel tuner-less technique. The effectiveness of the novel technique has been confirmed as carried out independently by the two laboratories, evidencing the benefits of both techniques. The proposed experimental activity highlights the applicability of the tunerless technique for the noise characterization of advanced on-wafer devices without the constraint imposed by the addition of a source tuner to the standard measurement setup.
关键词： on-wafer GaAs pHEMT,noise figure,microwave,low-noise characterization
更新于2025-09-11 14:15:04
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[IEEE 2018 Iranian Conference on Electrical Engineering (ICEE) - Mashhad (2018.5.8-2018.5.10)] Electrical Engineering (ICEE), Iranian Conference on - Investigating a Novel Normally-On AlGaN/GaN Capped PHEMT and the Effects of Cap Layers Thickness on its Gate Leakage Current
摘要： In this paper the effects of cap layers thickness in the AlGaN/GaN capped pseudomorphic high electron mobility transistor (PHEMT) are investigated using Atlas/Silvaco Simulator. The proposed structure improves the prior AlGaN/GaN capped HEMT reported in the literature by insertion of an In0.15Ga0.85N layer between the AlN spacer and the GaN buffer layers and optimization of the different layers dimensions, in order to minimize gate leakage current. Simulation results demonstrate a gate leakage current of 10-14 (A) and an Ion/Ioff of higher than 11 orders of magnitude, so that it is 3 orders of magnitude higher than that of the prior non-optimal structure.
关键词： AlGaN/GaN capped PHEMT,In0.15Ga0.85N layer,spacer layer,Ion/Ioff ratio
更新于2025-09-10 09:29:36
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An Accurate Experimental Investigation of an Optical Sensing Microwave Amplifier
摘要： This paper deals with an accurate experimental investigation of the optical sensing behavior of a microwave low-noise amplifier (LNA). The tested amplifier, employing a commercial InGaAs pHEMT has been analyzed in terms of the scattering parameters and the noise figure. The analysis has been carried out by observing how the device behavior is influenced by a continuous wave laser illumination for different optical wavelengths, power levels, and bias conditions. It has been assessed that the LNA performance is significantly influenced by the light exposure with optical effects more pronounced at higher wavelengths for a fixed incident power. Upon applying the recommended bias conditions of the sensing amplifier, the main changes consist of a degradation of the noise figure and gain. As opposite to this, an overall performance enhancement is clearly recognizable with the amplifier biased at the transistor pinch-off. The results obtained in the present work fully confirm a theoretical analysis previously carried out by employing different devices and LNA design.
关键词： low-noise amplifier,noise and scattering parameters,InGaAs pHEMT,Optical sensing
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Melbourne, Australia (2018.8.15-2018.8.17)] 2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - A Fully-Integrated <tex>$S$</tex>-Band Differential LNA in <tex>$0.15-\mu \mathrm{m}$</tex> GaAs pHEMT for Radio Astronomical Receiver
摘要： A fully-integrated S-band high-gain MMIC low noise amplifier (LNA) with differential input and single-ended output is presented and implemented in 0.15-μm GaAs pHEMT for Square Kilometre Array (SKA) astronomical receiver. The low-loss input noise matching network is designed, and the fully on-chip LC balun is introduced between the first stage LNA core and the second stage amplifier to improve overall system noise figure. The 1-dB bandwidth of the LNA covers from 1.5 to 3.7 GHz. The measurement results demonstrate 31.8-dB gain, average in-band noise figure of 0.73 dB with DC power con- sumption of 25 mW. The chip area is 2.5 x 2 mm2. Also, a noise figure measurement method for the 3-port differential-input-to- single-ended-output amplifiers is introduced in this paper.
关键词： differential low noise amplifier,GaAs pHEMT,Square Kilometre Array (SKA),fully- integrated,balun,broadband,S-band
更新于2025-09-04 15:30:14
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Design and Implementation of an Encapsulated GaN X-Band Power Amplifier Family
摘要： This paper describes the design and verification results of two wideband class AB High Power Amplifiers (PA), encapsulated in commercial packages. Both amplifiers designed on WIN Semiconductors’ 0.25 μm GaN on SiC technology. The selected GaN process features compact common-source (CS) transistor layouts with individual source grounding vias. The family spans the whole X-band frequency with the first design tuned between 7-11 GHz and the second design tuned between 10-12 GHz. Both designs have saturated power output greater than 25 W throughout the whole bandwidth with peak power added efficiency at 30%. A multistage power combining matching strategy to achieve a tradeoff in wideband performance and power output is given. In depth discussion of the MMIC design of the PAs is supported by a discussion of the thermal management of the packages, including the PCB design and active cooling methodology, in order to present a fully functional PA family.
关键词： pseudomorphic high electron mobility transistor (pHEMT),X-Band,wideband amplifiers,high efficiency,Power Amplifier (PA),thermal analysis,EM simulation,monolithic microwave integrated circuit (MMIC)
更新于2025-09-04 15:30:14