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Access to Disparate Soft Matter Materials by Curing with Two Colors of Light
摘要： A platform technology for multimaterial photoresists that can be orthogonally cured by disparate colors of light is introduced. The resist’s photochemistry is designed such that one wavelength selectively activates the crosslinking of one set of macromolecules, while a different wavelength initiates network formation of a different set of chains. Each wavelength is thus highly selective towards a specific photoligation reaction within the resist. Critically, the shorter wavelength does not induce ligation of the longer wavelength selective species within the same resist mixture, defined as “wavelength orthogonality.” Uniquely, this dual-color addressable resist system allows generating spatially resolved soft matter materials by simply selecting the curing wavelength, thus constituting a wavelength-orthogonal multimaterial resist with applications ranging from coatings to 3D additive manufacturing of multimaterial architectures.
关键词： photochemistry,λ-orthogonal curing,photoresists,multimaterial coatings,photoligation
更新于2025-09-23 15:23:52
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Fundamental understanding of chemical processes in extreme ultraviolet resist materials
摘要： New photoresists are needed to advance extreme ultraviolet (EUV) lithography. The tailored design of efficient photoresists is enabled by a fundamental understanding of EUV induced chemistry. Processes that occur in the resist film after absorption of an EUV photon are discussed, and a new approach to study these processes on a fundamental level is described. The processes of photoabsorption, electron emission, and molecular fragmentation were studied experimentally in the gas-phase on analogs of the monomer units employed in chemically amplified EUV resists. To demonstrate the dependence of the EUV absorption cross section on selective light harvesting substituents, halogenated methylphenols were characterized employing the following techniques. Photoelectron spectroscopy was utilized to investigate kinetic energies and yield of electrons emitted by a molecule. The emission of Auger electrons was detected following photoionization in the case of iodo-methylphenol. Mass-spectrometry was used to deduce the molecular fragmentation pathways following electron emission and atomic relaxation. To gain insight on the interaction of emitted electrons with neutral molecules in a condensed film, the fragmentation pattern of neutral gas-phase molecules, interacting with an electron beam, was studied and observed to be similar to EUV photon fragmentation. Below the ionization threshold, electrons were confirmed to dissociate iodo-methylphenol by resonant electron attachment.
关键词： photoabsorption,molecular fragmentation,electron emission,photoresists,mass-spectrometry,Auger electrons,photoelectron spectroscopy,EUV lithography,resonant electron attachment,halogenated methylphenols
更新于2025-09-23 15:21:01
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Tuning photoionization mechanisms of molecular hybrid materials for EUV lithography applications
摘要： The investigation of the photoionization processes of a series of titanium oxo clusters evidenced that doping their organic shell with extended aromatic structures decreases their ionization energy and stabilises the resulting radical cations. Such tunability of their photochemistry arising from ligand exchange gives these hybrid compounds great potential as EUV photoresists.
关键词： photoionization,titanium oxo clusters,EUV lithography,ligand exchange,photoresists
更新于2025-09-23 15:19:57
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Analysis of Various Approaches for the Fabrication of Diffractive Optical Elements
摘要： Diffractive Optical Elements (DOEs) exist for a large range of applications. Usually DOEs are obtained by combining lithographic techniques and etching in order to achieve pre-determined phase patterns. That way, it is possible to shape or split laser beams with very high efficiencies. Indeed for binary element which consist of two phase levels (0 and π) the diffraction efficiency is around 75% and this efficiency can approach 100% for multilevel elements. Various illustrations of DOEs can be found in the literature for example using organic materials like photoresists or inorganic materials such as silica or chalcogenide layers. Recent work has shown that DOEs can also be recorded in the volume of photosensitive chalcogenide layers, but no precise comparison of this class of DOEs has ever been made with classical DOEs. In this paper we propose to study binary DOEs fabricated with conventional lithography (based on local control of the thickness) and similar one fabricated using photo-induced refractive index change in As2S3 layers.
关键词： etching,phase patterns,silica,laser beams,photo-induced refractive index change,photoresists,lithography,As2S3 layers,chalcogenide layers,Diffractive Optical Elements,diffraction efficiency
更新于2025-09-16 10:30:52
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Design Principle of Reactive Components for Dimethacrylatea??Terminated Quantum Dots: Preserved Photoluminescent Quantum Yield, Excellent Pattern Uniformity, and Suppression of Aggregation in the Matrix
摘要： With the advent of various quantum dot (QD)-based application technologies, the demand for low-cost, eco-friendly, high-performance nanocomposites (e.g., QD photoresist) is rapidly increasing. However, the aggregation phenomenon due to incompatibility between QDs and components is still a limitation in industrial use. Herein, the principle of selecting reactive components that inhibit aggregation and preserve photoluminescent properties is presented. For model QDs (bis[2-(methacryloyloxy)ethyl] phosphate/1-dodecanethiol [BMEP/DDT] capped QDs), BMEP allows copolymerization and coadded DDT minimizes the loss of absolute quantum yield during ligand exchange. Besides, bisphenol A ethoxylate dimethacrylate (Mn: ≈1700, polyethylene oxide) suppresses aggregation in the matrix and provide high solubility in alkaline solution. More specifically, the coated thin film (1.0 μm thick) containing up to 20.0 wt% QDs exhibits not only transmittance of more than 85% at 550 nm, but also excellent pattern uniformity at high resolution.
关键词： photoresists,direct patterning,reactive monomers,quantum dots
更新于2025-09-16 10:30:52
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Fluorinated polycarbonate photoresists with adjustable double bond density for electro-optic switch applications by directly written method
摘要： A series of fluorinated polycarbonates (AF-3OH-PC MAs) terminated by different proportions of acrylate group were synthesized and directly used as photoresist materials. The materials can directly form a cross-linked film under UV light and initiator conditions without the addition of small molecular crosslinkers. The thermal stability (Td up to 416 ?C), the absorption at 1550 nm is almost zero and electro-optical stabilities ( after 80 °C for 200 h, the r33 remains 91% of the initial value) are significantly improved since the small molecular crosslinkers were not added. The propagation and insertion loss of the device were measured by a cut-back method to be only 0.66 dB/cm and 1 dB, respectively. It may be possible to have an enlightening effect on preparing electro-optical switches with better performance.
关键词： Directly Written Method,Electro-optic Switch,Double Bond Density,Photoresists,Fluorinated Polycarbonate
更新于2025-09-11 14:15:04
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Fundamental investigation on interaction between hexafluoroisopropylalcohol-containing styrene and photochemical acid generator for rationale design of photoresist system
摘要： This article presents the effect of some ionic photochemical acid generators (PAGs) to inhibit the dissolution of hexafluoroisopropylalcohol (HFA)-containing polystyrene to an aqueous alkaline developer, which is a highly important effect in photoresist application to enhance resolution of patterning. The dissolution inhibiting factors and mechanisms were investigated by evaluating the solubility and the 1H-NMR analysis of OH proton in HFA moiety. The dissolution inhibition effect was enhanced when the structures of PAGs fulfill some requirements: (a) their anions should have higher basicity and smaller van der Waals volume; (b) their cations should be stabilized by conjugation with electron-rich aromatics. In the dissolution inhibition, the HFA moiety interacts with the anionic part of PAGs liberated from the electrostatic interaction with the counter cation. These interactions were predicted and quantified by DFT calculations using Gaussian 09, leading to the rational designs of PAGs with higher dissolution inhibiting effect in photoresist systems.
关键词： fluoropolymers,photochemical acid generator,calculations,dissolution inhibition effect,photoresists
更新于2025-09-09 09:28:46
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Relationship between C=C double bond conversion and dissolution kinetics in cross-linking-type photoresists for display manufacture, studied by real-time Fourier transform infrared spectroscopy and quartz crystal microbalance methods
摘要： Photoresists are an indispensable technology used for manufacturing electronic devices such as displays and semiconductors. In this study, we investigated the relationship between C=C double bond conversion and dissolution kinetics in cross-linking-type photoresists used for display manufacture using real-time Fourier transform infrared spectroscopy (FTIR) and quartz crystal microbalance (QCM) methods. To improve photoresist performance, it is important to understand the development mechanism of photoresists. Two kinds of polymers (a polymer with peeling-type dissolution and a polymer with a dissolution type with Case II diffusion) were used. 1,2-Octanedione-1-[4-(phenylthio)-2-(O-benzoyloxime)] and bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide were used as photoinitiators. The dissolution was of the peeling type when the polymers were formulated as a typical cross-linking-type photoresist. With increasing conversion ratio of C=C double bonds, the rate of developer intake decreased and the impregnation threshold before the onset of peeling increased and then decreased. It was also found that the dissolution kinetics were affected by the radicals generated upon the decomposition of photoinitiators.
关键词： C=C double bond conversion,dissolution kinetics,quartz crystal microbalance,Photoresists,real-time Fourier transform infrared spectroscopy
更新于2025-09-04 15:30:14
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Progress in metal organic cluster EUV photoresists
摘要： Most advanced microelectronic devices are made by using 193 nm immersion lithography systems, but it is difficult to follow the rapid development of semiconductors due to their approaching physical limits. Extreme ultraviolet (EUV) lithography which uses a shorter wavelength (i.e., 13.5 nm) light source can offer a way to print features under a 20 nm HP. EUV lithography requires photoresists that utilize EUV photons because photons generated by EUV exposure are fewer than photons generated by 193 nm light exposure. In this paper, our recent progress in metal oxide photoresist research will be discussed.
关键词： nanotechnology,lithography,semiconductor,EUV photoresists,metal organic cluster
更新于2025-09-04 15:30:14