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Synthesis of Functionalized Polythiophene as a Potenial Organic Semi-Conductor
摘要： The synthesis Poly[1,5-naphthyridine-(3-hexylthiophene)] (PN3HTh) semi-conducting polymer has been accomplished by adopting both conventional and microwave-assisted Suzuki-Miyaura cross-coupling reaction between 3-hexylthiophene-2,5-diboronic ester and 2,6-dibromo-1,5-naphthyridine. The electrochemical and transport properties of PN3HTh were investigated both in the bulk as well as in thin film form. These properties can be further tuned by changing the solvent and the nature of the electrode used. Consequently, cyclic voltammetry (CV) measurements were conducted using a potentiostat coupled with an electrochemical cell. The CV results of PN3HTh as a bulk form in H2SO4 solution indicated that the concentration of the polymer in the solution is not well defined because of polymer poor solubility in aqueous solutions. On the other hand, the sulfur group which works as electron donating makes the system more electron-rich. This can explain by the absence of the reduction peak. For the thin film, two single oxidation peaks were obtained at around 0 V and 0.3 V for both cases. Different solvents can tune the transport properties of the polymer as can be seen from the two CVs where BF3 exhibited enhanced transport properties over ACN. The synthesized polymers were characterized by modern spectroscopic methods including IR and NMR.
关键词： Suzuki-Miyaura cross-coupling,Cyclic Voltammetry,Electrochemical Properties,Organic Semiconductor,Polythiophene
更新于2025-09-11 14:15:04
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A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study
摘要： Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction TFET. The CS TFET “line-tunneling” current increases significantly with the core diameter dC and outperforms the best III-V axial “point-tunneling” NW heterojunction TFET ION by up to 6× for dC = 6.6 nm. Reaching such a high level of current at low supply voltage, however, requires and involves specific and sometime unanticipated optimizations and physics that are thoroughly investigated here. In spite of the commonly accepted view, we also show and explain the weak gate-length dependency observed for the line-tunneling current in a III-V TFET. We further investigate the effect of electron-phonon scattering and discrete dopant impurity band tails on optimized CS NW TFETs. Including those non-idealities, the CS-TFET inverter performance significantly outperforms that of the axial TFETs. The low-power (LP) VDD = 0.35V CS-inverter delay is comparable to that of the high-performance (HP) Si CMOS using VDD = 0.55V, which shows promise for a LP TFET technology with HP speed.
关键词： Semiconductor device modeling,Quantum effect semiconductor devices,Semiconductor heterojunctions,Tunnel transistors,Quantum wires,Quantum theory
更新于2025-09-10 09:29:36
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Wavelength-Tunable Band-Edge Photoluminescence of Nonstoichiometric Ag–In–S Nanoparticles via Ga <sup>3+</sup> Doping
摘要： The nonstoichiometry of I?III?VI semiconductor nanoparticles, especially the ratio of group I to group III elements, has been utilized to control their physicochemical properties. We report the solution-phase synthesis of non-stoichiometric Ag?In?S and Ag?In?Ga?S nanoparticles and results of the investigation of their photoluminescence (PL) properties in relation to their chemical compositions. While stoichiometric AgInS2 nanoparticles simply exhibited only a broad PL band originating from defect sites in the particles, a narrow band edge PL peak newly appeared with a decrease in the Ag fraction in the nonstoichiometric Ag?In?S nanoparticles. The relative PL intensity of this band edge emission with respect to the defect-site emission was optimal at a Ag/(Ag + In) value of ca. 0.4. The peak wavelength of the band edge emission was tunable from 610 to 500 nm by increased doping with Ga3+ into Ag?In?S nanoparticles due to an increase of the energy gap. Furthermore, surface coating of Ga3+-doped Ag?In?S nanoparticles, that is, Ag?In?Ga?S nanoparticles, with a GaSx shell drastically and selectively suppressed the broad defect-site PL peak and, at the same time, led to an increase in the PL quantum yield (QY) of the band edge emission peak. The optimal PL QY was 28% for Ag?In?Ga?S@GaSx core?shell particles, with green band-edge emission at 530 nm and a full width at half-maximum of 181 meV (41 nm). The observed wavelength tunability of the band-edge PL peak will facilitate possible use of these toxic-element-free I?III?VI-based nanoparticles in a wide area of applications.
关键词： band-edge photoluminescence,multinary semiconductor,quantum dots,nonstoichiometry,I?III?VI2 semiconductor,visible photoluminescence,wavelength tunability,semiconductor nanocrystals
更新于2025-09-10 09:29:36
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AIP Conference Proceedings [Author(s) INTERNATIONAL CONFERENCE ON CIVIL, MECHANICAL AND MATERIAL ENGINEERING: ICCMME 2018 - Jeju-do, Korea (16–18 March 2018)] - Experimental study on the monomer structure of solar semiconductor cold wall
摘要： In this paper, solar semiconductor cold wall structure was adopted in the net-zero energy buildings, NZEB for short. The heat transfer and refrigeration effect of the monomer structure of semiconductor cold wall were tested, we get that the monomer structure of semiconductor cold wall has certain cooling effect. However, the heat exchange effect is not good of the cold and hot aluminum plate only through natural convection and radiation heat transfer. It is necessary to further study the process of semiconductor refrigeration and heat transfer and the factors that affect the cooling effect. At the same time, it put forward a series of suggestions and improvement opinion for NZEB in hot summer and cold winter areas.
关键词： semiconductor refrigeration,refrigeration effect,heat transfer,net-zero energy buildings,solar semiconductor cold wall
更新于2025-09-10 09:29:36
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[Nanostructure Science and Technology] Nanowire Electronics || Metal-Semiconductor Compound Contacts to Nanowire Transistors
摘要： Semiconductor nanowires [1–4] are promising building blocks for next-generation ultrascaled devices for electronic [5–7] and optoelectronic [8–10] applications. An important aspect for the development, maturity, and ef?ciency of these ultrascaled devices is the detailed understanding of and control over the phase transformation that accompanies the formation of their compound contacts for lithography-free self-aligned gate design [11, 12]. The term “compound” here refers to the formed phases that have ?xed stoichiometry between metal and semiconductor elements, to be distinguished from the broader “alloy” term for phases that may include nonstoichiometric or amorphous structure. This distinction is important because the formation of a low resistance, crystalline, and thermally stable compound contact is most preferred for realizing reliable functionality in ultrascaled semiconductor transistors. Usually, the phase of compound contact and its interfacial property with semiconductor nanowire (NW) can largely affect the band alignment and charge injection in NW channels. This demands the detailed studies of the metal-semiconductor solid-state reactions, including the formed compound phases, reaction kinetics, and their correlation to the device performances. In this book chapter, we provide a thorough discussion of these three topics.
关键词： metal-semiconductor solid-state reactions,compound contacts,reaction kinetics,phase transformation,Semiconductor nanowires,device performances
更新于2025-09-10 09:29:36
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On the influence of dilute charged impurity and perpendicular electric field on the electronic phase of phosphorene: Band gap engineering
摘要： Tuning the band gap plays an important role for applicability of 2D materials in the semiconductor industry. The present paper is a theoretical study on the band gap engineering using the electronic density of states (DOS) of phosphorene in the presence of dilute charged impurity and of a perpendicular electric field. The electronic DOS is numerically calculated using a combination of the continuum model Hamiltonian and the Green’s function approach. Our findings show that the band gap of phosphorene in the absence and presence of the perpendicular electric field decreases with increasing impurity concentration and/or impurity scattering potential. Further, we found that in the presence of opposite perpendicular electric fields, the electronic DOS of disordered phosphorene shows different changing behaviors stemming from the Stark effect: in the positive case the band gap increases with increasing electric-field strength; whereas in the negative case the band gap disappears. The latter, in turn, leads to the semiconductor-to-semimetal and semiconductor-to-metal phase transition for the case of strong impurity concentrations and strong impurity scattering potentials, respectively. The results can serve as a base for future applications in logic electronic devices.
关键词： Stark effect,perpendicular electric field,semiconductor-to-semimetal transition,phosphorene,band gap engineering,electronic density of states,semiconductor-to-metal transition,dilute charged impurity
更新于2025-09-10 09:29:36
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[IEEE 2018 International Conference on Smart City and Emerging Technology (ICSCET) - Mumbai, India (2018.1.5-2018.1.5)] 2018 International Conference on Smart City and Emerging Technology (ICSCET) - I. Simulation of bi-directional WDM-TDM PON with 5 Gb/s downstream and 2.5 Gb/s Upstream re-modulated Data based on RSOA
摘要： Paper present a simulation of bi-directional WDM-TDM PON with upstream re-modulation based on RSOA for 64 ONUs at 60 Km reach with 5 Gb/s downstream and 2.5 Gb/s upstream bit rate. A 1:16 splitter is used as a PON element which creates communication between central office and different users. The effectiveness of this design depends on the ability of the RSOA to re-modulate the received downstream signal with the new upstream signal. This architecture is investigated for different RSOA power, downstream receiver power and extinction ratio in terms of BER. The result shows that as the RSOA input power decreases and the device operating regime becomes increasingly linear, the BER performance of the upstream signal deteriorates and that of downstream signal improves. Also it is observed that greater the extinction ratio the harder is for the RSOA to overwrite the downstream signal
关键词： (RSOA),division multiplexing (TDM),(PON),Reflective,Wavelength division multiplexing(WDM),optical network,time-,unit(ONU),semiconductor optical amplifier,Passive optical network
更新于2025-09-10 09:29:36
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Interaction-induced photon blockade using an atomically thin mirror embedded in a microcavity
摘要： Narrow bright or dark resonances associated with electromagnetically induced transparency play a key role in enhancing photon-photon interactions. The schemes realized to date relied on the existence of long-lived atomic states with strong van der Waals interactions. Here, we show that by placing an atomically thin semiconductor with ultrafast radiative decay rate inside a microcavity, it is possible to obtain extremely narrow dark or bright resonances in transmission. While breaking of translational invariance sets a limit on the width of the dark resonance width, it is possible to obtain a narrow bright resonance that is much narrower than the cavity and bare exciton decay rates and is protected against disorder by tuning the cavity away from the excitonic transition. Resonant excitation of this bright resonance yields strong photon antibunching even in the limit where the interaction strength is arbitrarily smaller than the non-Markovian disorder broadening and the radiative linewidth of the bare exciton. Our findings suggest that atomically thin semiconductors which exhibit large exciton-cavity coupling and small nonradiative line broadening could pave the way for the realization of strongly interacting photonic systems in the solid state.
关键词： electromagnetically induced transparency,photon blockade,photon-photon interactions,microcavity,atomically thin semiconductor
更新于2025-09-10 09:29:36
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Uniform Insulating Properties of Low-Temperature Curable Gate Dielectric for Organic Thin-Film Transistor Arrays on Plastic Substrate
摘要： Achieving a high-resolution display on a plastic substrate requires a to ensure dimensional stability during fabrication process, including the deposition of gate dielectrics. Evaluation platform to confirm the uniform insulating properties of organic dielectric material prior to actual application to organic thin-film transistor (OTFT) arrays was proposed. This test method enabled verification of the suitability of the low-temperature curable dielectric and chemical resistance during fabrication process. A cross-linked poly(hydroxy imide) (PHI) that can be cured at a low temperature of 130°C exhibited stable insulating properties in a large area that sudden breakdown was not observed in an electric field up to 4 MV/cm. Thiophene-thiazole-based copolymer semiconductor was used as an active layer and inkjet-printed. In all the processes, the temperature of the substrate was kept below 130°C, and 4.8-inch electrophoretic display panels on a polyethylene naphthalate (PEN) substrate with a resolution of 98 dpi was demonstrated.
关键词： Organic thin-film transistors,Organic gate dielectric,Plastic substrates,Low-temperature process,Polymer semiconductor,Flexible displays,Inkjet printing
更新于2025-09-10 09:29:36
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Diode characteristics and metal ion sensing features of a conjugated macromolecular system based on indolocarbazole-thiophene
摘要： A poly(indolocarbazole-thiophene) based high molecular weight polymer (ICZP3) was synthesized by Sonogashira coupling reaction and characterized by FTIR, 1H NMR, 13C NMR analysis. An enhanced solubility for it in organic solvents was achieved by the incorporation of alkyl chains on to the nitrogen atom of the backbone unit. It exhibits good thermal stability with interesting photonic performance, and processability. The incorporation of electron-transporting monomer moieties has been found to induce a balanced charge density in it, suitable for diode applications. Its conduction mechanism has been found to resemble well with the space charge limited current model, and involves Schottky type behaviour when assembled into an ITO/ICZP3/Al device fabricated. An interesting additional feature observed for ICZP3 is its very high Hg2+ sensing. The ICZP3 system is found to be a promising candidate for semiconductor applications and sensing.
关键词： Schottky diode,Metal sensing,Organic semiconductor,Poly(indolocarbazole-thiophene)
更新于2025-09-10 09:29:36