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Industrial View of III-V Devices Compact Modeling for Circuit Design
摘要： This paper presents a commercial or industrial view of III–V compact models for circuit design. We contrast the requirements of III–V modeling to those of silicon. The differences in requirements are strongly rooted in the applications that III–V devices are used in the end user of III–V models and the differences in the “ecosystems” of the technologies. These differences create both challenges and opportunity for the III–V modeling community.
关键词： semiconductor device modeling,integrated circuit modeling,HEMTs,heterojunction bipolar transistor
更新于2025-09-04 15:30:14
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Application of kinetic flux vector splitting scheme for solving viscous quantum hydrodynamical model of semiconductor devices
摘要： In this article, one-dimensional viscous quantum hydrodynamical model of semiconductor devices is numerically investigated. The model treats the propagation of electrons in a semiconductor device as the flow of a charged compressible fluid. It plays an important role in predicting the behavior of electron flow in semiconductor devices. The nonlinear viscous quantum hydrodynamic models contain Euler-type equations for density and current, viscous and quantum correction terms, and a Poisson equation for electrostatic potential. Due to high nonlinearity of model equations, numerical solution techniques are applied to obtain their solutions. The proposed numerical scheme is a splitting scheme based on the kinetic flux-vector splitting (KFVS) method for the hyperbolic step, and a semi-implicit Runge-Kutta method for the relaxation step. The KFVS method is based on the direct splitting of macroscopic flux functions of the system on the cell interfaces. The second order accuracy of the scheme is achieved by using MUSCL-type initial reconstruction and Runge-Kutta time stepping method. Several case studies are considered. For validation, the results of current scheme are compared with those obtained from the splitting scheme based on the NT central scheme. The effects of various parameters such as device length, viscosities, different doping and voltage are analyzed. The accuracy, efficiency and simplicity of the proposed KFVS scheme validates its generic applicability to the given model equations.
关键词： Numerical simulation,Kinetic flux-vector splitting scheme,Semiconductor devices,Viscous quantum hydrodynamic model
更新于2025-09-04 15:30:14
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Visible light induced H2 evolution on the hetero-junction Ag/NiO prepared by nitrate route
摘要： The photo-electrochemical study of the hetero-junction Ag/NiO (5/95 wt%) prepared in situ by nitrate route was investigated to assess its photoactivity for the hydrogen production upon visible light. The X-ray diffraction pattern shows narrow peaks of Ag and NiO. The direct optical gap of the sensitizer NiO (1.51 eV) is well matched to the solar spectrum. It acts as n-type semiconductor and the potential of its conduction band (?0.35 VSCE), determined from the capacitance measurement, is more negative than the H2O/H2 level (～?0.3 VSCE), yielding water reduction under visible light; the photoactivity peaks at pH ～ 13. The excited electrons are transferred to Ag clusters, to reduce water into gaseous hydrogen owing to the low H2-over-voltage (～160 μmol). A quantum conversion efficiency of 0.11% is reported under visible light (3.42 × 1018 photons s?1) within ～10 min with an evolution rate of 96 μmol h?1 mg?1. The catalyst was tested for several successive photocatalytic cycles, a de-activation effect of ～7% per cycle is observed, thus proving its stability and repeatability. The heating of the catalyst under dynamic vacuum at 250 °C restores the initial photoactivity.
关键词： Hetero-junction Ag/NiO,Hydrogen,Semiconductor,Photo-electrochemical
更新于2025-09-04 15:30:14
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POLARIZATION TRANSFORMATION BY A HYPERBOLIC METAMATERIAL ON A METAL SUBSTRATE
摘要： In the present paper we focus on the study of polarization properties of biaxial metamaterial, which consist of alternate ferrite and semiconductor layers, located on an ideally conducted metal substrate. The system is placed into an external magnetic field along the boundaries of the layers. The effective medium theory is applied. Effective linear-to-elliptic polarization conversion has been shown, by means of physical and geometrical parameters of the system under consideration.
关键词： biaxial metamaterial,ferrite,linear-to-elliptic polarization conversion,metal substrate,polarization properties,semiconductor layers,external magnetic field,effective medium theory
更新于2025-09-04 15:30:14
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Estimate of Nonuniformity of Dose Distribution in Regime of Total Therapeutic Irradiation with In Vivo Dosimetry Using Semiconductor Detectors
摘要： We have estimated the nonuniformity of the dose distribution along the body of a patient using in vivo dosimetry by semiconductor detectors with total therapeutic irradiation of cancer patients before bone marrow transplantation. The method of in vivo dosimetry was developed and used at the Blokhin Oncology Center since 2007. Based on the results of the investigation of 35 patients, we determined a mean nonuniformity of 10–15% of the dose distribution along the body of the patient, which conforms to international recommendations. We show a linear dependence of the accumulated dose on the mass of the patient.
关键词： total irradiation,in vivo dosimetry,semiconductor detectors,radiation therapy
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 2nd International Conference on Dielectrics (ICD) - Budapest (2018.7.1-2018.7.5)] 2018 IEEE 2nd International Conference on Dielectrics (ICD) - Investigation of the partial discharge inception voltage of semiconductor sensor packages at repetitive impulse stress under the variation of pulse steepness and temperature
摘要： In this paper a test and measuring system for partial discharge under impulse stress is described. Therefore a low noise impulse source with variable frequency and impulse steepness was designed. The base is a push-pull switch. The measurement was executed according to standard IEC 61934. For the present study, the measuring of the PD signals was performed with high-frequency current transformers (HFCT). The entire test set-up was optimized in several steps. The investigated components are magnetic field sensors, realized in specific semiconductor plastic packages. The application integrated circuit (ASIC) on the low voltage side is galvanically separated from a portion of the Cu leadframe, which is connected to the high voltage application circuit. Subsequently this requires a package intrinsic solid state insulation system which is reliably over the entire lifetime. The PD inception voltages of the sensor ICs were investigated in dependence of temperature and impulse steepness. The results show a clear dependency on the two parameters.
关键词： steep impulses,HFCT,plastic package,partial discharge,semiconductor
更新于2025-09-04 15:30:14
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Semiconductor Heterojunctions for Enhanced Visible Light Photocatalytic H2 Production
摘要： Semiconductor-based heterojunctions have been shown to be effective photocatalytic materials to overcome the drawbacks of low photocatalytic efficiency that results from a high rate of electron?hole recombination and narrow photo-response range. In this paper, we report on the study of heterojunctions made from visible light active, graphitic carbon nitride, g-C3N4), and UV light active, strontium pyroniobate, Sr2Nb2O7. Heterojunctions made from a combination of g-C3N4 and nitrogen-doped Sr2Nb2O7 obtained at different temperatures were also studied to determine the effect of N doping. The photocatalytic performance was evaluated by using photocatalytic hydrogen evolution reaction (HER)from water g under visible light irradiation. It was found that the photocatalytic activities of as prepared heterojunctions are significantly higher than that of individual components under similar conditions. Heterojunction formed from g-C3N4 and N-doped Sr2Nb2O7 at 700oC (CN/SNON-700) showed better performance than heterojunction made from g-C3N4 and Sr2Nb2O7 (CN/SNO). A plausible mechanism for the heterojunction enhanced photocatalytic activity is proposed based on, relative band positions, and photoluminescence data.
关键词： graphitic carbon nitride,visible light photocatalysis,strontium pyroniobate,Semiconductor heterojunctions,hydrogen production
更新于2025-09-04 15:30:14
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Fully Automated RF-Thermal Stress Workbench with S-Parameters Tracking for GaN Reliability Analysis
摘要： The rapid development of III-V technologies for telecommunication and radar markets need the meeting of performances (power, frequency) criteria as well as reliability assessment. Nitride HEMT technologies are known to reveal a large variety of failure electrical signatures, and it is also largely accepted that multi-tools (multi physics) approaches is the only suitable way to understand the failure mechanisms and to improve the technologies. Experimental stress workbenches usually allow to track a given number of static/dynamic parameters, but specific characterization are only performed at initial and final steps on the devices. This paper proposes a new approach with S-parameters measurement performed during RF stresses without removing the devices under test (in a thermally controlled oven). Then intermediate knowledge of the electrical (small signal) behavior of the devices can be assessed, and crossed with large-signal and static time-dependent signatures.
关键词： Microwave transistors,HEMTs,Gallium nitride,Life testing,C-band,Semiconductor device reliability
更新于2025-09-04 15:30:14
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P-1.13: Influence of the Source/Drain Material on Oxide Semiconductor Thin Film Transistors
摘要： With the progress of technology, to reduce the load of display panels, some researchers have been carried out to investigate the effects of source/drain electrodes on the performance of a-IGZO based TFTs. In this paper, indium gallium zinc oxide (IGZO) is chosen as the active layer material, and we use four different types of source/drain materials including indium-tin-oxide (ITO), Al, Al-doped zinc oxide (AZO) and Ga-doped zinc oxide (GZO) to explore the influence of different source/drain materials on the characteristics of oxide semiconductor thin film transistors (TFT). The results show that TFTs with AZO as source/drain electrodes exhibit good characteristics. After 200℃ annealing, the output characteristic of TFT with AZO as source/drain electrodes becomes better and its source/drain series resistance is low. From this study, AZO can be considered as a hopeful source/drain material which would be utilized in the future displays technology.
关键词： AZO,thin film transistors,IGZO,oxide semiconductor,source/drain material
更新于2025-09-04 15:30:14
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NONLINEAR CHARACTERISTICS OF P-I-N DIODE CIRCUITS ANALYZED BY A PHYSICALLY BASED SIMULATION METHOD
摘要： Nonlinear characteristics of semiconductor devices play a key role in the performances of circuits, but their modelling is still a big challenge in circuit simulations nowadays. This paper explores modelling nonlinear characteristics of circuits containing semiconductor devices by presenting a modified physically based simulation method. A p-i-n diode microstrip circuit is taken as a sample, and its nonlinear characteristics, such as the power limiting, bistability, and forward recovery characteristics, are simulated and analysed. The applied method demonstrates its good capability and accuracy of modelling the nonlinear characteristics in the simulation, and moreover clarifies the underlying physical mechanisms. In contrast, the Advanced Design System (ADS) software, a popular circuit simulation program based on the equivalent circuit model, fails to reveal some of those nonlinear characteristics.
关键词： Nonlinear characteristics,microstrip circuit,p-i-n diode,semiconductor devices,physically based simulation method
更新于2025-09-04 15:30:14