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Electrical and Photoelectrical Characteristics of с-Si/Porous–Si/CdS Heterojunctions
摘要： Depending on the sizes of the CdS crystallites and silicon pores, electrical and photoelectrical characteristics of c-Si/porous–Si/CdS heterojunctions prepared by electrochemical deposition and anodization, respectively, are studied. The optimal pore size (10–16 nm) is determined, which provides the maximum photoelectric conversion efficiency (7.71%) of heterojunctions.
关键词： porous silicon,heterojunction,anodization,electrochemical deposition
更新于2025-09-23 15:22:29
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - The Impact of Dopant Diffusion on Random Dopant Fluctuation in Si Nanowire FETs: A Quantum Transport Study
摘要： In this work, we perform statistical quantum transport simulations with 3×3 nm2 Si nanowire (NW) field-effect transistors (FETs) to investigate the impact of dopant diffusion on random dopant fluctuation. First, we use an effective mass Hamiltonian for the transport where the confinement and transport effective masses are extracted from the tight-binding band structure calculations. The dopant diffusion along the transport direction from the source/drain regions to the channel region is modeled by the Gaussian doping profile. To generate random discrete dopants, we adopt a rejection scheme considering the 3-dimensional atomic arrangement of the NW structures. Our statistical simulation results show that the diffused dopants into the channel region cause large variability problems in Si NW FETs.
关键词： non-equilibrium Green's function,tight-binding,dopant diffusion,random discrete dopants,silicon nanowire
更新于2025-09-23 15:22:29
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Corona assisted gallium oxide nanowire growth on silicon carbide
摘要： This article reports on the use of corona discharge to assist the vapor liquid solid growth of gallium oxide nanowires on silicon carbide substrates. The corona discharge increases the nucleation efficiency of the gold catalysts from 60 % to 98 % for 3C-SiC(111)/Si(111) Si-face substrates and from 15 % to 80 % for 6H-SiC(0001) substrates. The growth mode and crystal structure are not affected by the corona discharge. The gallium oxide growth starts with the formation of [-311] oriented laterally overgrown terrace like nucleation zones with the gold catalyst particles floating on top. With evolving process time, the growth proceeds in the faster [010] direction, resulting in nanowires with an inclination angle of 51° towards the substrate surface. On silicon and sapphire substrates, the nucleation and growth of gallium oxide nanowires are suppressed.
关键词： B2. Silicon carbide,B1. Gallium oxide,A1. Nanowire,A1. Corona discharge,A3. Vapor liquid solid,A3. Vapor phase epitaxy
更新于2025-09-23 15:22:29
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Reverse annealing studies of irradiated silicon by use of current–voltage measurements
摘要： The annealing behaviour of irradiated silicon p-i-n diodes has been investigated by use of I–V measurements. The radiation-induced damage is achieved by the use of 1 MeV neutrons. The results have been analysed and a striking feature is easily noticeable where defects that do not anneal out alter their activity and behave more as generation centres. This means that they are situated in the upper half of the band gap where they act to increase the carrier density and the measured current. The increase in current starts to occur at around 100 days and a change in trap activity at around 180 days after irradiation. The device behaviour, however, remains ohmic throughout indicating that a defect level that is responsible for relaxation behaviour is stable. This study would assist in demonstrating stability of silicon radiation detectors during their operational time.
关键词： Diode,Current,Radiation,Semiconductor,Silicon,Annealing
更新于2025-09-23 15:22:29
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Characterization of the morphology of titanium and titanium (IV) oxide nanolayers deposited on different substrates by application of grazing incidence X-ray diffraction and X-ray reflectometry techniques
摘要： X-ray diffraction (XRD), grazing incidence X-ray diffraction (GIXRD) and X-ray reflectometry (XRR) techniques were applied for analysis of titanium (Ti) and titanium (IV) oxide (TiO2) nanolayers with thickness of 25 nm, 50 nm and 75 nm deposited on silicon, quartz and BK7 glass substrates. The aim of studies was investigating the crystal structure and morphology of the nanolayers in dependence on the substrate type. The chemical phases of nanolayers and substrates were determined by using the XRD and GIXRD measurements. The benefits of applying low angle GIXRD and XRR analytical techniques, both for substrate and nanofilm analysis, is discussed based on theoretical calculations and simulations. Additional, analytical capabilities of the XRR technique to nanolayer and substrate morphology analysis are presented. Simulated XRR curves for titanium (Ti) and titanium (IV) oxide nanolayers are discussed depending on the substrate type as well as the substrate and nanolayer roughnesses. Experimental reflectometry curves are presented for all titanium and titanium (IV) oxide nanolayers deposited on the different substrates. As the result of the XRR analysis, the nanolayer thickness and roughness together with substrate roughness are estimated. The mean values of the Ti and TiO2 layer thickness and roughness are presented for all studied samples. The largest roughness, both for nanolayers and for substrates, is obtained for BK7 glass material. In the manuscript, sample properties, experimental setups and measurement conditions are presented in details.
关键词： Titanium nanolayers,Titanium (IV) oxide nanolayers,Layer ion modification,X-ray reflectometry,Grazing incidence X-ray diffraction,Silicon, quartz substrates
更新于2025-09-23 15:22:29
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High-Temperature Filter Based on Silicon Carbide for Aggressive Fluids and Gases
摘要： In this paper, we developed a production method for items based on mesh silicon carbide that are suitable for cleaning aggressive fluids, melts, and gases from foreign inclusions at high operating temperatures. The resulting products can also be used for filtering fuel mixtures.
关键词： carbon fibers,silicization,silicon carbide,microstructure,composite filter
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Cancun (2018.8.29-2018.8.31)] 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Widely Tunable Ce:YIG on Si Microring Isolators for TE Mode Operation
摘要： We demonstrate fully integrated optical isolators using bonded Ce:YIG on silicon microrings with an integrated electromagnet. The isolator operates for TE mode input light and can be tuned between 1540 to 1580nm with >20dB isolation.
关键词： microring,isolator,silicon photonics
更新于2025-09-23 15:22:29
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Fabrication of Nano-Structured V-Shaped Grooves on B-Si Wafer for On-Board Spaceborne Blackbody System
摘要： Nano-structured V-shaped grooves on the black-silicon (B-Si) was fabricated to improve the optical emissivity for on-board spaceborne blackbody system. The deep reactive ion etching (DRIE) process was used to fabricate the V-shaped grooves on the B-Si wafer according to the etching conditions. The scanning electron microscopy (SEM) and infrared (IR) spectroscopy were used to evaluate the morphology, aspect ratio, and reflectance of the fabricated B-Si specimen. The surface of the B-Si was successfully structured with the nano-scale V-shaped grooves of which the height and diameter were approximately 670 nm and 200 nm, respectively. The reflectance of the B-Si was close to zero in a wavelength less than 1 μm. As a result, the fabricated B-Si with the nano-structured V-shaped grooves was suitable to the blackbody target for on-board spaceborne blackbody system.
关键词： On-Board Calibration,V-Shaped Groove,DRIE Process,Blackbody,Black Silicon
更新于2025-09-23 15:22:29
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Selective Gas Sensor Using Porous Silicon
摘要： The effect of polar and non-polar vapors, like ethanol, methanol, acetonitrile, chloroform and toluene vapors on porous silicon gas sensor was studied. We demonstrated that the selectivity of a single sensor can be achieved by the impedance measurements within the frequency range 103–105 Hz. It is shown that the capacitance of the structure and its frequency dispersion are different under influence of different gases providing an unique signature of an agent. A set of parameters is proposed in order to numerically characterize the response to different gases. The characteristic time of response to different vapors gives an additional parameter to sense gases selectively.
关键词： Organic Vapors,Gas Sensor,Porous Silicon,Selectivity
更新于2025-09-23 15:22:29
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Properties of Porous Silicon Precipitated with Nickel for Gas Sensors
摘要： The preparation and properties of modified porous silicon is discussed and a proposal of a sensitive layer for a gas detector is presented. The modification is done by precipitation and electrochemical deposition of nickel. The morphology of sample surfaces is examined by atomic force microscopy and scanning electron microscopy (SEM). SEM-coupled energy dispersive spectroscopy is used to analyse the chemical composition of the samples. Magnetic response is measured with a SQUID magnetometer. Electrochemical impedance spectroscopy is used to study the sensitivity of the samples to isopropanol vapour in the presence of alternating electric current. A series of samples prepared with a higher anodic current density show higher sensitivity to isopropanol vapours in comparison to a lower anodic current.
关键词： Electrochemical Impedance Spectroscopy,Porous Silicon,Gas Sensors,SQUID,Electroless Nickel Deposition,Atomic Force Microscopy
更新于2025-09-23 15:22:29