- 标题
- 摘要
- 关键词
- 实验方案
- 产品
过滤筛选
- 2019
- 2018
- JBSFET
- Robustness
- MOSFET
- Reliability
- Silicon Carbide
- 4H-SiC
- Failure Mechanism
- Short Circuit
- Ruggedness
- silicon photonics
- Electrical Engineering and Automation
- Optoelectronic Information Science and Engineering
- Electronic Science and Technology
- North Carolina State University
- MediaTek, Inc.
- JCET STATS ChipPAC Pte. Ltd.
-
VO <i> <sub/>n</sub></i> Complexes in RTA Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy
摘要： Oxygen-vacancy complexes formed after rapid thermal annealing in silicon wafers were investigated by FTIR spectroscopy at 6 K. It was found that VO4 is the only detectable complex. The concentration of VO4 complexes increases with increasing temperature of RTA treatment in the temperature range between 1250?C and 1400?C. The concentration at maximal temperature is equal to 4.5 × 1013 cm?3. The experimental results were compared with concentrations of VOn complexes in silicon wafers obtained using ab-initio calculations combined with rate equation modelling. The simulated concentration of VO4 corresponds well to the measured concentration. The bulk microdefect density increases with increasing VO4 concentration. The vacancies stored in VOn complexes after RTA are slowly released during further annealing and enhance oxide precipitation.
关键词： VO4 complexes,silicon wafers,Rapid thermal annealing,FTIR spectroscopy,oxygen precipitation
更新于2025-09-09 09:28:46
-
Epitaxial Bonding and Transfer Processes for Large-Scale Heterogeneously Integrated Electronic-Photonic Circuitry
摘要： A process ?ow for the heterogeneous integration of III-V epitaxial material onto a silicon host wafer using CMOS-compatible materials and methods toward the goal of forming electronic-photonic circuitry is presented. Epitaxial structures for compound-semiconductor-based transistors are assembled on a silicon carrier wafer using a commercially-available polymer and then formed into distinct patterns for scalable processing. A CMOS-compatible metallization process is performed on the back side collector terminal of the aligned epitaxial structures, followed by a metal-eutectic bonding process that transfers the wafer-scale array of III-V material onto a separate silicon host wafer allowing the fabrication of both electronic and photonic devices on a single wafer. Characterization of the epitaxial bonding and transfer is performed to ensure material alignment is maintained without additional tooling and that the interconnect layer established between III-V collector and silicon host wafer performs as an ohmic contact, thermal path, and mechanical bond compatible with back-end-of-line (BEOL) integrated circuit processing. These processes are shown for GaAs-based light-emitting transistor (LET) epitaxial material to demonstrate that subsequent photonic devices and systems may be patterned into the integrated material allowing a direct electrical interconnect to embedded CMOS-based electronic systems for new functionalities as electronic-photonic integrated circuitry.
关键词： epitaxial bonding,silicon host wafer,metal-eutectic bonding,III-V epitaxial material,electronic-photonic circuitry,heterogeneous integration,CMOS-compatible
更新于2025-09-09 09:28:46
-
Determination of the Elastic Behavior of Silicon Nanowires within a Scanning Electron Microscope
摘要： Three-point bending tests were performed on double-anchored, ?110? silicon nanowire samples in the vacuum chamber of a scanning electron microscope (SEM) via a micromanipulator equipped with a piezoresistive force sensor. Nanowires with widths of 35 nm and 74 nm and a height of 168 nm were fabricated. The nanowires were obtained monolithically along with their 10 ??m tall supports through a top-down fabrication approach involving a series of etching processes. The exact dimension of wire cross sections was determined by transmission electron microscopy (TEM). Conducting the experiments in an SEM chamber further raised the opportunity of the direct observation of any deviation from ideal loading conditions such as twisting, which could then be taken into consideration in simulations. Measured force-displacement behavior was observed to exhibit close resemblance to simulation results obtained by finite element modeling, when the bulk value of 169 GPa was taken as the modulus of elasticity for ?110? silicon. Hence, test results neither show any size effect nor show evidence of residual stresses for the considered nanoscale objects. The increased effect of the native oxide with reduced nanowire dimensions was captured as well. The results demonstrate the potential of the developed nanowire fabrication approach for the incorporation in functional micromechanical devices.
关键词： SEM,silicon nanowires,three-point bending tests,finite element modeling,elastic behavior
更新于2025-09-09 09:28:46
-
Simple Fabrication of Pillar Silicon Nanostructures by a Contact Block Copolymer Technique
摘要： In this study, silicon nanopillar structures were fabricated by a contact block copolymer (BCP) technique, which is a potential technique for the fabrication of self-aligned silicon nanoscale structures. For the contact BCP technique, a nanometer-scale BCP hole pattern was formed on the silicon surface and the silicon, masked with BCP, was exposed to a nitrogen ion beam for surface nitriding. Using the nitride surface as the etch mask, after the removal of the BCP silicon nanopillar structures could be successfully fabricated using a low-energy chlorine-based ion beam. By eliminating the additional steps of hard mask deposition and etching, this technique provided a simplified method of forming a silicon nanostructure. Especially, due to the extremely low thickness of the nitride mask layer, precise transfer of the mask dimension to the silicon was possible. The use of a low-energy ion beam could not only minimize the damage to the nanopillar silicon surface but could also increase the etch selectivity.
关键词： Block Copolymer,Inverted Ion Beam Etching,Pillar-Type Silicon Nanostructure,Surface Nitriding
更新于2025-09-09 09:28:46
-
Effect of CsI(Tl) micro-conical-frustums on the performance of the pixelated CsI(Tl) scintillation screen in X-ray imaging
摘要： The pixelated CsI(Tl) scintillation screen based on oxidized silicon micro-pore array template with CsI(Tl) micro-conical-frustums (CMCF) was proposed. The effect of the CMCF on the performance of the pixelated CsI(Tl) scintillation screen in X-ray imaging was studied by using Geant4 Monte Carlo simulation code. The variations of the light output (LO), modulation transfer function (MTF) and detective quantum efficiency (DQE) for the screen with the cone angle β of the CMCF in X-ray imaging were revealed. The results show that the LO of the pixelated scintillation screen with CMCF is superior to that of the screens with CsI(Tl) micro-cylinders (CMC) or with reversed CsI(Tl) micro-conical-frustums (RCMCF), but the spatial resolution of the X-ray imaging system by using the pixelated scintillation screen with RCMCF is better than that by using the screens with CMCF or with CMC. At low frequency, the cone angle β corresponding to DQEs from good to bad are 2.40°, 0.00° and -2.40°. But at high frequency, the cone angle β corresponding to DQEs from good to bad change to 2.40°, -2.40° and 0.00°. The reason is that, for a pixelated scintillation screen, the DQE for the screen not only depends on the efficiency of X-ray absorption, but also depends on the number of scintillation photons exiting the bottom the screen per interacting X-ray photon and its Poisson excess, and MTF. The simulated results of DQEs show that the comprehensive performance of the pixelated CsI(Tl) screen with CMCF in X-ray imaging is better than that of the screens with CMC or with CRMCF.
关键词： Shape of CsI(Tl) micro-conical-frustum,Performance in X-ray imaging,Oxidized silicon micro-pore array template,Pixelated CsI(Tl) scintillation screen
更新于2025-09-09 09:28:46
-
[IEEE 2018 IEEE Photonics Conference (IPC) - Reston, VA, USA (2018.9.30-2018.10.4)] 2018 IEEE Photonics Conference (IPC) - Dual-Mode Silicon Photonic Crystal Nanocavity Modulator with Indium Oxide Gate
摘要： We report an ultra-efficient indium oxide gated silicon photonic crystal nanocavity electro-optical modulator, which is based on a dual-mode operation of resonance tuning and electro-absorption. With only 0.35μm long electrode, we achieved a tuning efficiency of 250pm/V and a modulation strength of 4dB/V with 35% from electro-absorption.
关键词： silicon photonics,modulator,photonic crystal cavity,transparent conductive oxide
更新于2025-09-09 09:28:46
-
Optical Trapping, Optical Binding, and Rotational Dynamics of Silicon Nanowires in Counter-Propagating Beams
摘要： Silicon nanowires are held and manipulated in controlled optical traps based on counter-propagating beams focused by low numerical aperture lenses. The double-beam configuration compensates light scattering forces enabling an in-depth investigation of the rich dynamics of trapped nanowires that are prone to both optical and hydrodynamic interactions. Several polarization configurations are used, allowing the observation of optical binding with different stable structure as well as the transfer of spin and/or orbital momentum of light to the trapped silicon nanowires. Accurate modeling based on Brownian dynamics simulations with appropriate optical and hydrodynamic coupling confirms that this rich scenario is crucially dependent on the non-spherical shape of the nanowires. Such increased level of optical control of multi-particle structure and dynamics open perspectives for nanofluidics and multicomponent light-driven nanomachines.
关键词： optical binding,silicon nanowires,light-driven rotations,Optical trapping,light angular momentum
更新于2025-09-09 09:28:46
-
High-Q-factor nanobeam photonic crystal cavities in bulk silicon carbide
摘要： Silicon carbide (SiC) is a promising optical material for stable and broadband nanophotonics. To date, thin crystalline SiC layers for nanophotonic platforms have been created by ion implantation or growth on other materials, which may cause optical absorption in the SiC layer. We fabricated SiC nanobeam photonic crystal cavities directly from a crystalline (4H) SiC bulk wafer using oblique plasma etching to avoid material-based optical absorptions. The measured quality (Q) factor of the nanobeam photonic crystal cavity reaches 4 (cid:2) 104, which is the highest recorded Q factor in crystalline SiC cavities. Furthermore, we investigated theoretical Q factors by taking into account structural imperfections unique to this fabrication process and compared them with the experimental results.
关键词： oblique plasma etching,nanobeam photonic crystal cavities,structural imperfections,Silicon carbide,quality factor
更新于2025-09-09 09:28:46
-
Analysis of Forward Surge Performance of SiC Schottky Diodes
摘要： Silicon Carbide JBS diodes are capable, in forward bias, of carrying surge current of magnitude significantly higher than their rated current, for short periods. In this work, we examine the mechanisms of device failure due to excess surge current by analyzing variation of failure current with device current and voltage ratings, as well as duration of current surge. Physical failure analysis is carried out to correlate to electrical failure signature. We also quantify the impact, on surge current capability, of the resistance of the anode ohmic contact to the p-shielding region.
关键词： MPS,JBS,SiC,Diode,Surge,SBD,Silicon Carbide,Schottky,Reliability
更新于2025-09-09 09:28:46
-
[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Design and Fabrication of Silicon-cavity Band-pass Filters Based on MEMS Technology
摘要： Microwave filter is an important frequency selective component in communication, radar and other microwave systems, and its performance will directly affect the performance of the whole system. With the miniaturization, lightweight and intelligence of microwave systems, the miniaturization, integration and high performance of filters are the main development targets. This paper introduces the design and fabrication of C-band silicon cavity filters based on the interdigital resonant structure and Microelectromechanical systems (MEMS) fabrication technology. The silicon MEMS cavity filters, with 1/4 wave length interdigital resonators and tapped input and output lines, are designed and fabricated on high-resistivity silicon substrates. The filter is designed by formulas and HFSS simulation. Test results show that, the filter center frequency is 5.6 GHz, the relative bandwidth is 16%, the insertion loss is 2.04 dB, the inhibition at 4.0 GHz and 6.9 GHz is both greater than 40dB, the voltage standing wave ratio (VSWR) is less than 1.30, and the filter chip size is only 7.3 mm×6 mm×0.82 mm. Also, the test results have high consistency with simulation results.
关键词： Microelectromechanical systems (MEMS),Band-pass Filter,Silicon Cavity
更新于2025-09-09 09:28:46