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Influence of diamond tool chamfer angle on surface integrity in ultra-precision turning of singe crystal silicon
摘要： Ultra precision diamond machining enables the economical production of freeform optics on infrared materials such as silicon. To produce optics with acceptable surface integrity, it is important to have a good understanding of process-work material interaction between diamond tool and brittle and hard single crystal IR materials. Chamfered cutting edges are known to have high strength, which makes them suitable for machining difficult-to-cut materials. This study investigates the influence of chamfer angle on the surface integrity of silicon. Diamond tool chamfer angles of ? 20°, ? 30°, and ? 45° are considered under practical diamond turning conditions of single crystal silicon. State-of-the-art techniques were used to investigate the surface integrity of the machined silicon surfaces. The results show that chamfer angle of 30° yields more favorable results compared to 20° and 45° under the conditions tested. The results indicate the complex interplay between tool geometry and process parameters in reaching an acceptable level of surface integrity. A machinability map indicating ductile and brittle machining conditions for 30° chamfered diamond tool has been presented which includes directly transferable knowledge to the precision machining industry.
关键词： Silicon,Surface integrity,Phase transformation,Diamond machining
更新于2025-09-23 15:21:21
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Investigation of hydrogen effect on phosphorus-doped polysilicon thin films
摘要： Polycrystalline silicon is widely used in microelectronic and photovoltaic applications. The main problem of this material is the recombination of charge carriers at the grain boundaries which affects the efficiency of the polycrystalline silicon solar cells. In order to improve the crystalline quality and the electrical properties of phosphorus-doped poly-silicon thin films, heat treatments under hydrogen were carried out. This allowed the occupation of the dangling bonds at the grain boundaries and made them inactive, which resulted in improved optoelectronic properties of the treated samples. It has been shown that the effect of hydrogen on the electrical characteristics is more pronounced for low doping concentrations where a 20% improvement of the free carrier concentration was obtained. In addition, the results have shown that the introduction of hydrogen in poly-silicon thin films reduces the density of trap states at the grain boundaries.
关键词： hydrogen,passivation,solar cells,grain boundaries,Polycrystalline silicon
更新于2025-09-23 15:21:21
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Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence
摘要： Here, we demonstrate the growth of horizontal GaN NWs on silicon (111) by a surface-directed vapour–liquid–solid (SVLS) growth. The influence of the Au/Ni catalysts migration and coalescence on the growth of the NWs has been systematically studied. A 2-D root-like branched NWs were gown spontaneously through catalyst migration. Furthermore, a novel phenomenon that a catalyst particle is embedded in a horizontal NW was observed and attributed the destruction of growth steady state due to the catalysts coalescence. The transmission electron microscopy (TEM) and photoluminescence (PL), cathodoluminescence (CL) measurement demonstrated that the horizontal NWs exhibit single crystalline structures and good optical properties. Our work sheds light on the horizontal NWs growth and should facilitate the development of highly integrated III?V nanodevices on silicon.
关键词： GaN nanowires,silicon substrate,coalescence,catalyst migration,SVLS growth
更新于2025-09-23 15:21:21
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Hybrid III-V/SiGe solar cells on Si substrates and porous Si substrates
摘要： A tandem GaAsP/SiGe solar cell has been developed employing group-IV reverse buffer layers grown on silicon substrates with a subsurface porous layer. Reverse buffer layers facilitate a reduction in the threading dislocation density with limited thicknesses, but ease the appearance of cracks, as observed in previous designs grown on regular Si substrates. In this new design, a porous silicon layer has been incorporated close to the substrate surface. The ductility of this layer helps repress the propagation of cracks, diminishing the problems of low shunt resistance and thus improving solar cell performance. The first results of this new architecture are presented here.
关键词： tandem on silicon,porous silicon,reverse buffer layers,III-V on silicon,GaAsP/SiGe
更新于2025-09-23 15:21:01
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Nanofabrication of SOI-Based Photonic Waveguide Resonators for Gravimetric Molecule Detection
摘要： A silicon photonic microresonator comprising two curved vertical grating couplers and a single suspended Si nanowaveguide (NWG) is developed to investigate the giant enhanced Brillouin scattering in subwavelength NWGs caused by photon-phonon interaction. Finite element modelling based on COMSOL Multiphysics is conducted to optimize the critical device parameters (e.g., waveguide width, height, and length). As the smallest structures that need to be resolved are down to ~15 nm in size, electron-beam nanolithography is employed. In this case, dosage tests are carried out to minimize proximity charging effects during the nanopatterning of the silicon-on-insulator (SOI) surface, resulting in appropriate adaptive current area dosage distributions for the periodic gratings, couplers peripheral areas, and NWG, respectively. Furthermore, an enhanced inductively coupled plasma dry reactive ion etching (ICP-DRIE) process at a cryogenic temperature is used to realize smooth vertical sidewalls. Finally, buffered hydrofluoric acid (BHF)-based wet chemical etching is carried out to remove the buried oxide resulting in a suspended Si waveguide.
关键词： optical communication,integrated optics,silicon technology,nanowaveguide,silicon photonics
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Alleviating performance and cost constraints in silicon heterojunction cells with HJT 2.0
摘要： When considering silicon heterojunction technology (HJT) for mass production the most frequently expressed reservations are related to the performance and cost constraints the standard TCO on the cell front side namely thin indium tin oxide (ITO) constitutes. We address these concerns with our HJT 2.0 concept in which the front electrode is made of a bi-layer of ITO that is supplemented by a silicon nitride (SiN) layer. This cell concept was developed to yield an increase in efficiency of typically 0.2% absolute due to improved cell current and a cost saving in the range of 30-40% with respect to cost of ownership (CoO).
关键词： solar cell efficiency,silicon heterojunction technology,cost saving,silicon nitride,indium tin oxide,HJT 2.0
更新于2025-09-23 15:21:01
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Physical Separation and Beneficiation of End-of-Life Photovoltaic Panel Materials: Utilizing Temperature Swings and Particle Shape
摘要： One of the technical challenges with the recovery of valuable materials from end-of-life (EOL) photovoltaic (PV) modules for recycling is the liberation and separation of the materials. We present a potential method to liberate and separate shredded EOL PV panels for the recovery of Si wafer particles. The backing material is removed by submersion in liquid nitrogen, while the encapsulant is removed by pyrolysis. After pyrolysis, separation of the liberated particles (i.e., Si wafer and glass) is carried out by using particle size and shape with mechanical screening. Using this robust approach, a Si wafer grade of 86% and a recovery of 88% were achieved.
关键词： Recycling,Silicon,Particle shape,Photovoltaic panels,Silicon compounds,Temperature swings
更新于2025-09-23 15:21:01
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Transparent Thin-Film Silicon Solar Cells for Indoor Light Harvesting with Conversion Efficiencies of 36% without Photo-degradation
摘要： With the development of the Internet of Things (IoT), indoor photovoltaics are attracting considerable interest owing to their potential to benefit various IoT-related fields. Therefore, this study investigates the use of transparent hydrogenated amorphous silicon (a-Si:H) solar cells for a broad range of applications, including indoor light harvesting. High gap triple-layers were employed in the a-Si:H solar cells to obtain a high shunt resistance and high short-circuit current, JSC, and open-circuit voltage, VOC, under indoor illumination. Additionally, multiple color-adjusting layers were added without noticeable costs to the conversion efficiency. The maximum efficiency of 36.0% was obtained at a transmittance of 20.44% under white LED light (3,000 lx and 0.92 mW cm-2). Furthermore, the fabricated transparent solar cells show excellent long-term performance, sustaining over 99% of original efficiency under continuous indoor light illumination for 200 h. These cells could accelerate the progress of energy harvesting in IoT applications and facilitate the construction of integrated photovoltaics.
关键词： amorphous silicon solar cells,thin film silicon solar cells,transparent solar cells,indoor photovoltaics,colored solar cells
更新于2025-09-23 15:21:01
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Influence of DC electric and magnetic fields on silicon solar cells/modules
摘要： In this study, the impact of DC electric and magnetic fields on the output power, open-circuit voltage, and photocurrent density of a silicon photovoltaic (PV) cell/module is assessed. In this regard, the influence of DC electric and magnetic fields is first evaluated in theory by formulating and discussing related basis and concepts. Then, experimental measurements and data obtained from two different sets of experiments are given that verify theoretical results. In theory and practice, it is shown that depending on the direction of a DC electric field applied to a silicon PV cell/module, it causes an increase or reduction in the output power and open-circuit voltage of the PV cell/module. In detail, when the DC electric field points in the direction of the junction electric field of the PV cell(s), the output power and open-circuit voltage of the silicon PV cell/module increase, otherwise the output power and open-circuit voltage decrease. Regarding the magnetic field, it is proved that depending on the direction of a DC magnetic field applied to a silicon PV cell/module, different effects are observed. In detail, when the DC magnetic field points along the junction electric field of the PV cell(s), it has no effect on the output power and open-circuit voltage of the silicon PV cell/module. But, the output power and open-circuit voltage of the silicon PV cell/module decrease when the DC magnetic field points in the other directions. Moreover, the reduction in the output power and open-circuit voltage reaches its peak when the DC magnetic field is applied in the direction perpendicular to the junction electric field.
关键词： DC electric field,solar energy,silicon PV cell,silicon PV module,DC magnetic field
更新于2025-09-23 15:21:01
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Damp-Heat-Stable, High-Efficiency, Industrial-Size Silicon Heterojunction Solar Cells
摘要： Silicon heterojunction (SHJ) solar cells hold the power conversion efficiency (PCE) record among crystalline solar cells. However, amorphous silicon is a typical high-entropy metastable material. Damp-heat aging experiments unveil that the amorphous/crystalline silicon interface is susceptible to moisture, which is potentially the biggest stumbling block for mass production. By capping SiNx and SiOx dielectrics, the absolute PCE degradation is predicted to be only (cid:1)0.6% after a 30-year installation. This demonstrates the SHJ solar cell is a highly promising candidate for next-generation photovoltaics.
关键词： High efficiency,Amorphous silicon,Mass production,Damp-heat stability,Silicon heterojunction solar cells
更新于2025-09-23 15:21:01