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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices
摘要： We study the photocarrier lifetime evolution of n-Cz Si material throughout the processing sequence for polycrystalline passivated contact devices. We show that a high temperature annealing pretreatment (known as Tabula Rasa) has a clear effect on enhancing bulk lifetimes of n-Cz Si. We further this development by integrating such defect engineering into the lower-temperature annealing of passivated contact. By applying oxidizing ambient gases during these anneals we report a photocarrier lifetime enhancement over an N2 environment. This enhancement is exhibited in a 1-sun iVOC of 735 mV when annealed in O2 rather than 708 mV in N2.
关键词： monocrystalline silicon,intrinsic point defects,passivation,thermal processing,Czochralski,photocarrier lifetime
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Efficiency Improvement of Planar Silicon Solar Cells Utilizing Localized Surface Plasmon Resonance of Silver Nanoparticles
摘要： In this work we develop a time- and cost-effective method of fabricating an antireflection structure on Si solar cells utilizing the localized surface plasmon resonance (LSPR) of Ag nanoparticles (NPs). Covered with an Al2O3 layer to prevent degradation, the NP decorated Si solar cell exhibits a broadband light absorption enhancement, having a low weighted average spectral reflectance (Rave) value of 9.5%, and exhibits the highest absolute gain of 19.2% in external quantum efficiency (EQE) at 700 nm and an overall 20% relative increase in power efficiency (η) compared to the reference Si solar cell without NPs.
关键词： metal nanoparticles,localized surface plasmon resonance,antireflection coating,silicon
更新于2025-09-23 15:21:01
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Predicted CsSi Compound: A Promising Material for Photovoltaic Applications
摘要： Exploration of photovoltaics materials has received enormous interest in a wide range of both fundamental and applied research. Therefore, in this work, we identify a CsSi compound with a Zintl phase for a promising candidate of photovoltaic materials by using global structure prediction method. Electronic structure calculations indicate that this phase possesses a quasi-direct band gap of 1.45 eV, suggesting that its optical properties could be superior to diamond-Si for capturing sunlight from the visible to the ultraviolet range. In addition, a novel silicon allotrope is obtained by removing Cs atoms from this CsSi compound. The superconducting critical temperature of this phase was estimated as a Tc of 9 K in terms of a substantial density of states at the Fermi level. Our findings represent a new promising CsSi material for photovoltaic applications, as well as a potential precursor of a superconducting silicon allotrope.
关键词： Zintl phase,quasi-direct band gap,photovoltaics,superconducting silicon allotrope,CsSi compound
更新于2025-09-23 15:21:01
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27 GHz Silicon-contacted waveguide-coupled Ge/Si avalanche photodiode
摘要： We report a silicon-contacted Ge/Si avalanche photodiode with RF gain of 11 and a bandwidth of 27 GHz at -12 V operating at 1310 nm. The device is fabricated in an established Si photonics platform without additional process complexity and contacts only on Si. Wafer-scale performance data are presented confirming the reproducibility and the manufacturability of the device. Wide open eye diagrams are for 25, 40 and 50 Gbps data-rates. The demonstration of such avalanche photodiode shows great potential for improving optical link margins for optical transceivers operating at 400 Gb/s and beyond.
关键词： Silicon Photonics,Optical Interconnection,Germanium,Photodetectors
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE CPMT Symposium Japan (ICSJ) - Kyoto, Japan (2019.11.18-2019.11.20)] 2019 IEEE CPMT Symposium Japan (ICSJ) - Polymer Optical Coupling Device with Single Mode Fiber for Silicon Photonics
摘要： Optical interconnect has attracted much attention as a possible solution to solve the bottleneck of conventional electric interconnect for realizing high bit rate transmission network. The optical interconnect requires high efficiency and easy optical coupling between optical wiring and optical fibers. Especially in these days, expansion of single mode fiber in optical interconnect and silicon photonics (SiPh) devices requires new coupling scheme between these devices. In this paper, we propose a novel coupling device which is composed with a microlens and a pillar having about 10?m diameter on the end face of SMF. This is fabricated by using self-written waveguide (SWW) method with UV-curable resin.
关键词： Self-Written Waveguide,Microlens,Silicon Photonics,UV-curable resin,Pillar,Optical Interconnection
更新于2025-09-23 15:21:01
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Design of silicon waveguide polarization beam splitter based on reversed ?? <i>?2</i> directional coupler
摘要： We report a directional coupler type polarization beam splitter using silicon waveguides designed for 1550–1600 nm wavelengths. The device uses the coupling strength difference between the TE and TM modes. We use a reversed Δβ structure to achieve a wide operational wavelength range. The gap between the waveguides needs to be wide enough to attain a sufficient extinction ratio for the TE mode. Simulation results show that an over 100 nm operational 20 dB extinction ratio wavelength range can be attained at 1520–1620 nm wavelengths by this simple structure. The fabrication width tolerance exceeds 10 nm which is enough for foundry processes.
关键词： polarization beam splitter,silicon waveguide,directional coupler,TE and TM modes,reversed Δβ structure
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Room Temperature Wet Chemical Growth of an Oxygen Enhanced Diffusion Oxide Utilized in a Boron Diffusion Process
摘要： Resonators fabricated in heavily doped silicon have been noted to have a reduced frequency-temperature dependence compared with lightly doped silicon. The resonant frequency of silicon microelectromechanical systems (MEMS) resonators is largely governed by the material’s elastic properties, which are known to depend on doping. In this paper, a suite of different types and orientations of resonators were used to extract the ?rst- and second-order temperature dependences of the elastic constants of p-doped silicon up to 1.7e20 cm?3 and n-doped up to 6.6e19 cm?3. It is shown that these temperature-dependent elastic constants may be used in ?nite element analysis to predict the frequency-temperature dependence of similarly doped silicon resonators.
关键词： temperature dependence,Doping,resonators,silicon
更新于2025-09-23 15:21:01
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An investigation on determinants of silver paste metallization contact performance on crystalline silicon solar cells
摘要： Since the application of silver (Ag) electrodes is of vital importance to the power output of crystalline silicon (c-Si) solar cells, the factors affecting Ag paste metallization contact performance on Si wafers need to get well understood. Herein, the correlation of Ag/Si contact resistivity and glasses used in Ag paste was studied comprehensively. Here taken for exemplification are three types of glass samples used in Ag paste, because the application of them can result in obvious differences in the contact interface characteristics as well as in the contact resistivity. It was found that the factors affecting contact resistivity include the formation of Ag colloids in the glass phase, the doping concentration in the contacted Si surface, and the fixed charge density and defect states density at the interface. In terms of these issues, the key functions and mechanisms of glasses used in Ag paste are elucidated, and also their effects on electrical performance of cells are discussed in this article.
关键词： glass frit,metallization contact,contact resistivity,crystalline silicon solar cells,silver paste
更新于2025-09-23 15:21:01
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Optimization of laser-patterning process and module design for transparent amorphous silicon thin-film module using thin OMO back electrode
摘要： Transparent hydrogenated amorphous silicon thin-film solar modules are fabricated using oxide-metal-oxide (OMO) electrodes as the back electrode for building-integrated photovoltaic applications. The outer aluminum-doped zinc oxide and inner silver layers constitute a thin OMO electrode (~110 nm thick), exhibiting a sheet resistance of 6.8 Ω/□ and an average transmittance of ~88% in the visible range of 400–800 nm. The external quantum efficiency and average transmittance of the cell were investigated for the absorber-layer thickness using the finite-difference time-domain method, and it was found that the optical loss in the cell was mainly due to the absorption of the front electrode in the ultra-violet region and free-carrier absorption of the OMO in the infrared region. Fabrication issues are introduced for a 532 nm short-pulse high-power laser patterning process for transparent modules with thin OMO electrodes. Optimization of the laser power for the P2 and P3 laser processes is demonstrated by observing the profiles and measuring the shunt resistance of the laser-patterned edges. Furthermore, the cell width is optimized based on an equivalent circuit model using PSpice simulation. The highest module efficiency and average transparency achieved in the range of 500–800 nm were 5.6% and 15.2%, respectively. The short-circuit current density, fill factor, and open-circuit voltage per cell of the module were found to be 10.8 mA/cm2, 62.7%, and 0.830 V, respectively.
关键词： Laser patterning,Transparent amorphous silicon photovoltaic,Equivalent circuit,Building integrated photovoltaic,Cell geometry,Oxide-metal-oxide electrode
更新于2025-09-23 15:21:01
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Stepped morphology on vicinal 3C- and 4H-SiC (0001) faces: A Kinetic Monte Carlo study
摘要： Stepped morphologies on vicinal 3C- and 4H-SiC (0001) surfaces with the miscut toward [1100] or [1120] directions have been studied with a three-dimensional kinetic Monte Carlo model. In the model, a three-dimensional lattice mesh was established based on the crystal lattice of 3C-and 4H-SiC to fix the positions of atoms and interatomic bonding. Periodic boundary conditions were applied in the lateral direction while helicoidal boundary conditions were used in the direction of crystal growth. Events, such as adatoms attachment, detachment and interlayer transport at the step edges, and adatoms adsorption and diffusion on the terraces were considered in the model. Effects of Ehrlich-Schwoebel barriers at downward step edges and incorporation barriers at upwards step edges were also considered. Moreover, the atoms of silicon and carbon were treated as the minimal diffusing species independently to achieve more elaborate information for the behavior of atoms in the crystal surface. The simulation results showed that multiple-height steps were formed on the vicinal 4H-SiC (0001) surfaces, whereas single bilayer-height stepped morphologies were observed on the vicinal 3C-SiC (0001) surfaces. Furthermore, zigzag shaped edges were observed for both of 3C- and 4H-SiC (0001) surfaces with the miscut toward [1120] direction. At last, the formation mechanism of the stepped morphology was also analyzed.
关键词： Computer simulation,Crystal morphology,Silicon Carbide,Surfaces,Kinetic Monte Carlo Model
更新于2025-09-23 15:21:01