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Growth and Self-Assembly of Silicon–Silicon Carbide Nanoparticles into Hybrid Worm-Like Nanostructures at the Silicon Wafer Surface
摘要： This work describes the growth of silicon–silicon carbide nanoparticles (Si–SiC) and their self-assembly into worm-like 1D hybrid nanostructures at the interface of graphene oxide/silicon wafer (GO/Si) under Ar atmosphere at 1000 °C. Depending on GO film thickness, spread silicon nanoparticles apparently develop on GO layers, or GO-embedded Si–SiC nanoparticles self-assembled into some-micrometers-long worm-like nanowires. It was found that the nanoarrays show that carbon–silicon-based nanowires (CSNW) are standing on the Si wafer. It was assumed that Si nanoparticles originated from melted Si at the Si wafer surface and GO-induced nucleation. Additionally, a mechanism for the formation of CSNW is proposed.
关键词： nanoparticles,thermal reduction,silicon carbide,graphene oxide,self-assembly,silicon,nanowires
更新于2025-09-23 15:23:52
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Quasi-one-dimensional silicon nanostructures for gas molecule adsorption: a DFT investigation
摘要： Porous structures offer an enormous surface suitable for gas sensing, however, the effects of their quantum quasi-confinement on their molecular sensing capacities has been seldom studied. In this work the gas-sensing capability of silicon nanopores is investigated by comparing it to silicon nanowires using first principles calculations. In particular, the adsorption of toxic gas molecules CO, NO, SO2 and NO2 on both silicon nanopores and nanowires with the same cross sections was studied. Results show that sensing-related properties of silicon nanopores and nanowires are very similar, suggesting that surface effects are predominant over the confinement. However, there are certain cases where there are remarked differences between the nanowire and porous cases, for instance, CO-adsorbed nanoporous silicon shows a metallic band structure unlike its nanowire counterpart, which remains semiconducting, suggesting that quantum quasi-confinement may be playing an important role in this behaviour. These results are significant in the study of the quantum phenomena behind the adsorption of gas molecules on nanostructure’s surfaces, with possible applications in chemical detectors or catalysts.
关键词： Sensing,Chemical sensors,Silicon nanowires,Density functional theory,Molecule adsorption,Porous silicon
更新于2025-09-23 15:23:52
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Low-temperature dark anneal as pre-treatment for LeTID in multicrystalline silicon
摘要： Light and elevated temperature induced degradation (LeTID) is currently a severe issue in crystalline silicon photovoltaics, which has led to numerous efforts to both understand the mechanism and to mitigate it. Here we show that a low-temperature dark anneal performed as the last step in typical solar cell processing influences greatly LeTID characteristics, both the strength of the degradation and the degradation kinetics. While a relatively short anneal in the temperature range of 200–240 °C can be detrimental to LeTID by doubling the degradation intensity, an optimized anneal at 300 °C shows the opposite trend providing an efficient means to eliminate LeTID. Furthermore, we show that the simulated recombination activity of metal precipitation and dissolution during the dark anneal correlates with the experiments, suggesting a possible explanation for the LeTID mechanism.
关键词： PERC,Precipitation,Multicrystalline silicon,Minority-carrier lifetime,LeTID,Copper in silicon
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) - Saint Petersburg, Russia (2018.10.22-2018.10.23)] 2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) - Investigation of the Phase Composition and Morphology of Silicon Structures by Using the Raman Spectroscopy to Determine the Parameter of Crystallinity
摘要： This work aims to investigate the dependence of the phase composition of thin films of microcrystalline silicon deposition on process parameters. The films of microcrystalline silicon were obtained by plasma-chemical deposition method (PECVD). Phase composition and correlation between degree of crystallinity and structure of the obtained layers were analyzed by Raman Spectroscopy. The results show that the control of several technical parameters, e.g. pressure, discharge power and monosilane flow, allows to reach the crystallinity parameter in the range 50-70 %. Based on the conducted experiments, the recommendations for the control of the crystallinity parameter, which are planned to be implemented when working with silicon-based porous structures, were proposed.
关键词： Morphology,Semiconductors,Silicon,Por-silicon,Phase composition,Raman spectroscopy,Raman Crystallinity
更新于2025-09-23 15:23:52
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Low-loss and broadband non-volatile phase-change directional coupler switches
摘要： An optical equivalent of the field-programmable gate array (FPGA) is of great interest to large-scale photonic integrated circuits. Previous programmable photonic devices relying on the weak, volatile thermo-optic or electro-optic effect usually suffer from a large footprint and high energy consumption. Phase change materials (PCMs) offer a promising solution due to the large non-volatile change in the refractive index upon phase transition. However, the large optical loss in PCMs poses a serious problem. Here, by exploiting an asymmetric directional coupler design, we demonstrate non-volatile PCM-clad silicon photonic 1 × 2 and 2 × 2 switches with a low insertion loss of ~1 dB and a compact coupling length of ~30 μm while maintaining a small crosstalk less than ?10 dB over a bandwidth of 30 nm. The reported optical switches will function as the building blocks of the meshes in the optical FPGAs for applications such as optical interconnects, neuromorphic computing, quantum computing, and microwave photonics.
关键词： Silicon photonics,Non-volatile,Optical switches,Phase-change materials,Reconfigurable photonics,Integrated photonic devices
更新于2025-09-23 15:23:52
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NIR light-triggered gelling <i>in situ</i> of porous silicon nanoparticles/PEGDA hybrid hydrogels for localized combinatorial therapy of cancer cells
摘要： Porous silicon-based nanocomposite hydrogels were readily constructed with the gelation of poly(ethylene glycol) double acrylates (PEGDA) macromers, due to the initiation of singlet oxygen photosensitized with porous silicon nanoparticles (PSiNPs) under near-infrared (NIR) light irradiation. Multifunctional PSiNPs/PEGDA nanocomposite hydrogels showed strong ?uorescence, excellent biodegradability, signi?cant photothermal effect, and sustained drug release with high ef?ciency (>80%). Finally, in situ growth of PSiNPs/PEGDA hybrid hydrogels on cancer cells was also achieved by NIR light, and then their biodegradation, drug release and synergistic chemo-phototherapeutic ef?cacy were further demonstrated, which could provide a signi?cant localized inhibition for the viability, adherence, and migration of cancer cells in vitro. Thus, we suggested that these resultant hybrid hydrogels would have important potential on local cancer therapy in future clinical practice.
关键词： porous silicon nanoparticles,hybrid hydrogels,therapy,insitu gelation,localized cancer
更新于2025-09-23 15:23:52
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Determination of Selectivity Coefficients of Sodium and Potassium Ion-Selective Electrode Using Porous Silicon N-Type (100) Based Extended Gate Field Effect Transistor
摘要： Determination of Selectivity Coefficients of Sodium and Potassium Ion-Selective Electrode Using Porous Silicon N-Type (100) Based Extended Gate Field Effect Transistor
关键词： Sodium,Selectivity Coefficients,Porous Silicon,Extended Gate Field Effect Transistor,Ion-Selective Electrode,Potassium
更新于2025-09-23 15:23:52
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Single Flip-Chip Packaged Dielectric Resonator Antenna for CMOS Terahertz Antenna Array Gain Enhancement
摘要： A single dielectric resonator antenna (DRA) capable of enhancing the antenna gain of each element of a 2×2 THz antenna array realized in a 0.18-μm CMOS technology is proposed in this work. The DRA implemented in a low-cost integrated-passive-device (IPD) technology is flip-chip packaged onto the CMOS antenna array chip through low-loss gold bumps. By designing the DRA to work at the higher-order mode of TE3,δ,9, only single DRA instead of conventionally needing four DRAs is required to simultaneously improve the antenna gain of each element of the 2×2 antenna array. This not only simplifies the assembly process but it can also reduce the assembly cost. Moreover, the DRA can provide great antenna gain enhancement because of being made of high-resistivity silicon material and higher-order mode operation. The simulated antenna gain of each on-chip patch antenna of the 2×2 CMOS antenna array can be increased from 0.1 to 8.6 dBi at 339 GHz as the DRA is added. To characterize the proposed DRA, four identical power detectors (PDs) are designed and integrated with each element of the 2×2 THz antenna array, respectively. By measuring the voltage responsivity of each PD output, the characteristics of each antenna of the antenna array with the proposed DRA, including the gain enhancement level and radiation pattern, can be acquired. The measurement results follow well with the simulated ones, verifying the proposed DRA operation principle. The four PDs with the proposed DRA are also successfully employed to demonstrate a THz imaging system at 340 GHz. To the best of the authors’ knowledge, the proposed DRA is the one with the highest-order operation mode at THz frequencies reported thus far.
关键词： Silicon,Flip-chip packaging,Terahertz,CMOS,Terahertz imaging system,Antenna,Higher-order mode,Power detector,Dielectric resonator antenna
更新于2025-09-23 15:23:52
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Nanoparticle Emissions from Metal-Assisted Chemical Etching of Silicon Nanowires for Lithium Ion Batteries
摘要： As one of the most promising anode materials for high-capacity lithium ion batteries (LIBs), silicon nanowires (SiNWs) have been studied extensively. The metal-assisted chemical etching (MACE) is a low-cost and scalable method for SiNWs synthesis. Nanoparticle emissions from the MACE process, however, are of grave concerns due to their hazardous effects on both occupational and public health. In this study, both airborne and aqueous nanoparticle emissions from the MACE process for SiNWs with three sizes of 90 nm, 120 nm, and 140 nm are experimentally investigated. The prepared SiNWs are used as anodes of LIB coin cells, and the experimental results reveal that the initial discharge and charge capacities of LIB electrodes are 3636 and 2721 mAh g-1 with 90 nm SiNWs, 3779 and 2712 mAh g-1 with 120 nm SiNWs, and 3611 and 2539 mAh g-1 with 140 nm SiNWs. It is found that, for 1 kW h of LIB electrodes, the MACE process for 140 nm SiNWs produces a high concentration of airborne nanoparticle emissions of 2.48 × 109 particles/cm3; the process for 120 nm SiNWs produces a high mass concentration of aqueous particle emissions, with a value of 9.95 × 105 mg/L. The findings in this study can provide experimental data of nanoparticle emissions from the MACE process for SiNWs for LIB applications, and can help the environmental impact assessment and life cycle assessment of the technology in the future.
关键词： Lithium ion batteries (LIBs),Metal-assisted chemical etching (MACE),Nanoparticle emissions,Silicon nanowires (SiNWs)
更新于2025-09-23 15:23:52
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Investigation of Strongly Hydrophobic and Thick Porous Silicon Stain Films Properties
摘要： Porous silicon (PSi) structures with strong hydrophobicity have been achieved by chemical etching of p-type silicon substrates in a solution based on hydrofluoric acid solution (HF) and vanadium oxide (V2O5). The surface morphology and microstructure of the elaborated structured silicon surfaces were investigated using Scanning Electron Microscope (SEM), contact angle and Fourier Transform Infrared spectroscopy (FTIR). The results show that the obtained structures exhibit hierarchically porous surfaces with porous pillars of silicon (PPSi) and an important hydrophobicity of the surface. The electrical properties of those PPSi structures were investigated in presence of 10 ppm of NO2 gas. The response time was about 30s at room temperature. Our results demonstrate that PPSi/Si are highly hydrophobic for long time and suitable for applications in the field of self-cleaning and may be a good candidate in elaborating practical NO2 sensors.
关键词： Porous silicon,Hydrophobicity,Gas sensing applications,Pillars structures
更新于2025-09-23 15:23:52