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Influence of substrate and substrate temperature on the structural, optical and surface properties of InGaN thin films prepared by RFMS method
摘要： In this work, the pure InGaN thin films were grown using n-type and p-type silicon substrates at varying substrate temperatures using the sputtering method. The effects of substrate and substrate temperature on the structural, morphological and optical properties of the thin films grown were investigated. X-ray diffraction (XRD) analyzes of the obtained films illustrates crystal structures at C substrate temperature, the films were found to be hexagonal. Scanning electron microscopy (SEM) was used to investigate the shape, size and surface distribution of the particles formed on film surfaces. The reflection and optical band gap (Eg) of the films were investigated from the optical analyzes taken with the UV-VIS spectrophotometer. As a result of these analyzes, it has been reached that the substrate and substrate temperature have a great influence on the structural, morphological and optical properties of the films. The experimental findings obtained in the study are compared with the studies given in the literature and the similarities and differences are discussed.
关键词： InGaN growth,silicon substrate,thin films,sputtering technique,substrate temperature
更新于2025-09-23 15:23:52
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Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence
摘要： Here, we demonstrate the growth of horizontal GaN NWs on silicon (111) by a surface-directed vapour–liquid–solid (SVLS) growth. The influence of the Au/Ni catalysts migration and coalescence on the growth of the NWs has been systematically studied. A 2-D root-like branched NWs were gown spontaneously through catalyst migration. Furthermore, a novel phenomenon that a catalyst particle is embedded in a horizontal NW was observed and attributed the destruction of growth steady state due to the catalysts coalescence. The transmission electron microscopy (TEM) and photoluminescence (PL), cathodoluminescence (CL) measurement demonstrated that the horizontal NWs exhibit single crystalline structures and good optical properties. Our work sheds light on the horizontal NWs growth and should facilitate the development of highly integrated III?V nanodevices on silicon.
关键词： GaN nanowires,silicon substrate,coalescence,catalyst migration,SVLS growth
更新于2025-09-23 15:21:21
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Prominent Heat Dissipation in Perovskite Light-Emitting Diodes with Reduced Efficiency Droop for Silicon-Based Display
摘要： Solution-processed perovskite light-emitting diodes (LEDs) possess outstanding optoelectronic properties for potential solid-state display applications. However, poor device stability results in significant efficiency droop partly being ascribed to Joule heating when LEDs are operated at high current densities. Herein, we used monocrystal silicon (c-Si) as substrate and charge injection layer to alleviate the thermal affection in perovskite LED (PeLED). By incorporating silicon oxide (SiOx) and poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4’-(N-(4-butylphenyl) (TFB) layer to tune the charge injection balance in c-Si-based device, a PeLED achieves an external quantum efficiency of 2.12% with a current efficiency of 6.06 cd A-1. Benefiting from excellent heat dissipation of c-Si, the PeLEDs display reduced efficiency droop and extended operational lifetime. Furthermore, both electroluminescent (EL) dynamic information display and static pattern displays of c-Si-based PeLED have been successfully demonstrated. These results reveal the feasibility of potential practical c-Si-based PeLEDs with reduced efficiency droop for EL display applications.
关键词： efficiency droop,silicon substrate,perovskite light-emitting diode,display application,heat dissipation
更新于2025-09-23 15:19:57
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Freestanding and supported processing of sub-70 μm kerfless epitaxial Si and thinned Cz/FZ Si foils into solar cells: An overview of recent progress and challenges
摘要： Utilisation of expensive silicon (Si) material in crystalline Si modules has come down to 4 g Si per watt-peak in 2018, mainly as a result of reduction in wafer thickness and kerf losses as well as increase in module efficiencies. With continued progress in conventional multi-wire sawing of ingots, wafers as thin as 100 μm could eventually be produced. Beyond this, kerfless lift-off technologies are being investigated which enable wafer thicknesses well below 100 μm with negligible Si kerf waste. Such thin Si wafers and foils would be much lighter in weight than today's standard 165-180 μm-thick wafers and would exhibit considerable flexibility and fragility. This necessitates a rethink about how to handle and process thin Si into solar devices in a manufacturing line with high mechanical yield and high throughput. This paper gives a broad overview of the different approaches for fabricating solar cells on thin Si foils. In particular, three routes are discussed in detail, namely (1) freestanding processing of thin Si, (2) processing of thin Si supported mechanically on a conductive low-cost Si substrate (“wafer-equivalent” approach) and (3) processing of thin Si bonded to a transparent glass superstrate. In each case, the main challenges are explained and the recent progress in addressing them are summarised. Kerfless 50 μm-thick epitaxial Si foils lifted-off using porous Si and thinned-down Si wafers (below 70 μm) are used as model substrates for this work.
关键词： Fragility,Layer transfer,Breakage,Lift-off,Glass superstrate,Thin silicon foils,Supported processing,Epitaxial silicon,Bonding,Adhesive,Wafer-equivalent,Low-cost silicon substrate,Flexibility,Kerfless,Freestanding
更新于2025-09-16 10:30:52
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Influence of ZnTe separation layer thickness on optical properties in CdTe/ZnTe double quantum dots on Si substrates
摘要： We investigate the influence of the ZnTe separation layer thickness on the photoluminescence (PL) dynamics of CdTe/ZnTe double quantum dots (DQDs) on Si substrates. The results clarify that the DQD's structure effectively improves the limit of the carrier collection and the thermal stability of the corresponding single-layer QDs. The unusual temperature-dependent PL is explained using the single model for thermal redistribution of carrier states. This model indicates that the main nonradiative process at high temperatures is caused by scattering via multiphonons with longitudinal optical phonon energy of about 19–21.3 meV. The confinement-induced mixing and electron-carrier coupling effects cause blue-shift and enhanced PL intensity. We propose that the separation layer controls carrier dynamics in optoelectronic devices by modulating the thermal escape and e-h pairs in the intermixing layers.
关键词： Quantum dots,Silicon substrate,Cadmium telluride,Thermal escape,Carrier confinement
更新于2025-09-16 10:30:52
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Optical and Magneto-Optical Properties of Multilayer Nanosized [Co/TiO2]n Films
摘要： The optical and magneto-optical properties of the metal–dielectric multilayer [Co/TiO2]n structures with 2–4-nm-thick layers prepared on a silicon substrate Si(001) by ion-beam deposition have been studied. The complex permittivity of multilayer [Co/TiO2]n structures has been measured by the optical ellipsometry technique in the spectral range of 0.6–5.6 eV and analyzed using the optical reflection matrices for isotropic multilayer dielectric structures taking into account the optical losses and also using the method of anisotropic effective medium. The magneto-optical Kerr effect has been measured by the polarimetric technique in the spectral range of 1.2–4.5 eV in the polar and longitudinal geometries. The magnetic anisotropy type is determined on the base of the field dependences of the magneto-optical Kerr effect. It is found that the nanosized [Co/TiO2]n structures can be considered as artificial optically uniaxial media with a strong magnetic and optical anisotropy at room temperature.
关键词： silicon substrate,Co/TiO2,magneto-optical properties,multilayer nanosized films,optical properties,complex permittivity,magneto-optical Kerr effect,magnetic anisotropy,optical ellipsometry,ion-beam deposition
更新于2025-09-10 09:29:36
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Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1?0?0) substrate by molecular beam epitaxy
摘要： We grew a GaSb/Al0.3Ga0.7Sb multiple-quantum-well (MQW) structure on a two-inch Si(1 0 0) substrate using a 100-nm-thick heteroepitaxial GaSb thin-film buffer with a nucleation layer of GaSb dots by molecular beam epitaxy (MBE) and evaluated the surface morphology and the photoluminescence (PL) and X-ray diffraction spectra of the MQW structure. The full width at half maximum of the PL spectrum of the GaSb/Al0.3Ga0.7Sb MQW structure was very narrow, although the buffer thickness was much lower than those for previously reported GaSb-based QW structures on Si(1 0 0) substrates. This indicated that the surface of the 100-nm-thick GaSb thin-film buffer was sufficiently flat to form heterostructures and MQWs. The surface roughness and crystalline quality of the GaSb buffer and MQW structure were strongly dependent on the growth temperature; high-performance devices were realized by optimizing the growth temperature. These results showed the advantage and potential applicability of the GaSb/Al0.3Ga0.7Sb MQW structure and the GaSb thin-film buffer with GaSb dots as a nucleation layer grown on Si(1 0 0) substrates.
关键词： A1. Nucleation layer,B1. Gallium antimonide,A3. Quantum wells,B2. Semiconducting III–V materials,A3. Molecular beam epitaxy (MBE),B1. Silicon substrate
更新于2025-09-04 15:30:14