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High-efficiency CIGS solar cell by optimization of doping concentration, thickness and energy band gap
摘要： In this paper, the performance of copper-indium-gallium-diselenide Cu(In,Ga)Se2 solar cell, with ZnO window layer, ZnSe bu?er layer, CIGS absorber layer and InGaP re?ector layer was studied. The study was performed using the TCAD Silvaco simulator. The e?ects of grading the band gap of CIGS absorber layer, the various thicknesses and doping concentrations of di?erent layers have been investigated. By optimizing the solar cell structure, we have obtained a maximum open circuit voltage of 0.91901 V, a short circuit current density of 39.89910 mA/cm2, a ?ll factor (FF) of 86.67040% and an e?ciency of 31.78% which is much higher than the values for similar CIGS solar cells reported so far.
关键词： e?ciency,CIGS,optimization,TCAD Silvaco,Thin ?lm solar cells
更新于2025-09-16 10:30:52
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Coupling and Trapping of Light in Thin-Film Solar Cells Using Modulated Interface Textures
摘要： Increasing the e?ciency of solar cells relies on light management. This becomes increasingly important for thin-?lm technologies, but it is also relevant for poorly absorbing semiconductors like silicon. Exemplarily, the performance of a-Si:H/μc-Si:H tandem solar cells strongly depends on the texture of the front and rear contact surfaces. The rear contact interface texture usually results from the front surface texture and the subsequent absorber growth. A well-textured front contact facilitates light-coupling to the solar cell and light-trapping within the device. A variety of di?erently textured ZnO:Al front contacts were sputter deposited and subsequently texture etched. The optical performance of a-Si:H/μc-Si:H tandem solar cells were evaluated regarding the two e?ects: light-coupling and light-trapping. A connection between the front contact texture and the two optical e?ects is demonstrated, speci?cally, it is shown that both are induced by di?erent texture properties. These ?ndings can be transferred to any solar cell technologies, like copper indium gallium selenide (CIGS) or perovskites, where light management and modi?cations of surface textures by subsequent ?lm growth have to be considered. A modulated surface texture of the ZnO:Al front contact was realized using two etching steps. Improved light-coupling and light-trapping in silicon thin-?lm solar cells lead to 12.5% e?ciency.
关键词： thin-?lm solar cell,light-trapping,ZnO:Al,front contact,light-scattering,surface texture,light-coupling
更新于2025-09-16 10:30:52
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Engineering of effective back-contact barrier of CZTSe: Nanoscale Ge solar cells – MoSe2 defects implication
摘要： Using temperature-dependent measurements and device modeling, we systematically study the e?ective back-contact barrier of CZTSe devices to improve the property of the back-contact interface. By comparing with CZTSe devices with various nanoscale Ge con?gurations, CZTSe nanoscale Ge bi-layers devices show the improved power conversion e?ciency by 1.1%. DC magnetron sputtering is used to fabricate CZTSe: nanolayer Ge devices. Critical device parameters are characterized to understand the impact of nanoscale Ge ?lms on the back-contact device characteristics. Based on empirical results, modeling is performed for the in?uence of MoSe2 defects on the e?ective back-contact barrier. Analysis of experimental results of Ge bi-layers devices with the improved back-contact barrier makes a good agreement with modeling and Sentaurus TCAD simulation at the 95% con?dence-level. The conversion e?ciency of CZTSe: nanoscale Ge bi-layers devices is improved up to 8.3%.
关键词： Schottky barrier,Thin ?lm solar cells,CZTSe,Kesterite,Back-contact,Ge nanolayer
更新于2025-09-12 10:27:22
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Magnetron sputtered Sb2Se3-based thin films towards high performance quasi-homojunction thin film solar cells
摘要： Sb2Se3 is a promising candidate for environment-friendly and cost-e?ciently thin ?lm photovoltaics thanks to its material advantages and superior optoelectronic properties. However, it has intrinsically low electrical conductivity, which leads to unsatisfactory device performance and limited scope of applications. Herein, we demonstrated an e?ective strategy of electrical conductivity-induced Sb2Se3-based photovoltaic performance improvement. Three Sb2Se3-based targets with chemical composition of Sb2Se3, Sb2Se3.3 and Sb2(Se0.9I0.1)3 have been ?rstly prepared by using high-temperature melting technique. Then the high-quality thin ?lms can be obtained through an e?ective Radio Frequency (RF) magnetron sputtering process. A novel Sb2Se3 quasi-homojunction thin ?lm solar cell was fabricated for the ?rst time and the highest power conversion e?ciency reaches already a highly interesting 2.65%. The combined features of unique quasi-homojunction device structure and advantageous full-vacuum preparation process further demonstrated its attractive potential for thin ?lm photovoltaic applications.
关键词： Sb2Se3,Quasi-homojunction,Magnetron sputtering,Thin ?lm solar cells,Electrical conductivity
更新于2025-09-12 10:27:22
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A resist-less patterning method of Al thin film on polycarbonate by F2 laser irradiation
摘要： In recent years, polycarbonate is gathering interests as light and strong material for smart windows. In this paper, a resist-less patterning method of Al thin ?lm on silicone hard-coated polycarbonate by 157 nm F2 laser irradiation is reported. A photomask placed on Al thin ?lm on polycarbonate and irradiated with F2 laser and the non-irradiated area was removed by KOH aq. The mechanism of the method was examined by XPS measurement and it represents that the surface of Al thin ?lm is modi?ed to Al2O3 by F2 laser irradiation and the Al2O3 surface prevents the chemical etching. The ATR-FTIR and XPS measurements of polycarbonate surface under Al thin ?lm imply that the silicone hard coat layer of polycarbonate was oxidized by F2 laser irradiation even under Al thin ?lm and Al-O-Si bonds might be formed between Al and silicone hard coat interface. The formation of Al2O3 at the surface of Al thin ?lm and Al-O-Si bonds at Al/silicone hard coat interface are expected to give abrasion resistance and strong adhesion for Al thin ?lm on silicone hard-coated polycarbonate. This patterned Al ?lm fabrication method contributes to the manufacturing of electrodes for smart polycarbonate windows.
关键词： Surface modi?cation,Metal thin ?lm,VUV laser,Patterning,Chemical etching
更新于2025-09-12 10:27:22
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Degradation of Mg-doped zinc oxide buffer layers in thin film CdTe solar cells
摘要： Cadmium Sulphide is the conventional n-type bu?er layer used in thin ?lm Cadmium Telluride solar cells. It is well known that Cadmium Sulphide causes optical losses and sulphur di?uses into the absorber during high temperature activation. Sputter-deposited Mg-doped ZnO (MZO) has been shown to be an attractive bu?er layer for Cadmium Telluride solar cells due to its transparency and tuneable band gap. It is also stable to high temperature processing and avoids di?usion of elements into the cadmium telluride absorber during the cadmium chloride activation treatment. However, degradation is observed in solar cells incorporating MZO bu?er layers. Analysis of the MZO ?lm surface potential has revealed signi?cant ?uctuations in the thin ?lm work function once the layer is exposed to the atmosphere following deposition. These ?uctuations are attributed to the high reactivity to water vapour of the MgO contained in the MZO ?lms. This has been analysed using X-ray Photoelectron Spectroscopy to determine corresponding changes in the surface chemistry. The Zinc Oxide component is relatively stable, but the analysis shows that MgO forms a Mg(OH)2 layer on the MZO surface which forms a secondary barrier at the MZO/CdTe interface and/or at the interface between MZO and the Fluorine-doped SnO2. This a?ects the Fill Factor and as a consequence it degrades the conversion e?ciency.
关键词： Surface contamination,Degradation,Thin ?lm solar cells,Cadmium telluride,Magnesium-doped zinc oxide,Hydroxide,Bu?er
更新于2025-09-11 14:15:04
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Titanium Dioxide Hole-Blocking Layer in Ultra-Thin-Film Crystalline Silicon Solar Cells
摘要： One of the remaining obstacles to achieving the theoretical ef?ciency limit of crystalline silicon (c-Si) solar cells is high interface recombination loss for minority carriers at the Ohmic contacts. The contact recombination loss of the ultra-thin-?lm c-Si solar cells is more severe than that of the state-of-art thick cells due to the smaller volume and higher minority carrier concentration. This paper presents a design of an electron passing (Ohmic) contact for n-type Si that is hole-blocking with signi?cantly reduced hole recombination. By depositing a thin titanium dioxide (TiO2) layer, we form a metal-insulator-semiconductor (MIS) contact for a 2 μm-thick Si cell to achieve an open circuit voltage (Voc) of 645 mV, which is 10 mV higher than that of an ultra-thin cell with a traditional metal contact. This TiO2 MIS contact constitutes a step towards high-ef?ciency ultra-thin-?lm c-Si solar cells.
关键词： titanium dioxide,Silicon photovoltaic,ultra-thin-?lm,selective contact
更新于2025-09-11 14:15:04
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Performance Investigation of Mott-Insulator LaVO3 as a Photovoltaic Absorber Material
摘要： Mott insulators have recently been identi?ed as potential solar energy conversion material due to their favorable parameters. In this paper, we have investigated the cell performance by exploring the photovoltaic properties of Mott Insulator LaVO3 (LVO). The LVO thin ?lms were grown by the sol–gel technique followed by a sintering pathway under various processing conditions. We investigated the in?uence of processing parameters on the structural, optical and electrical properties of the ?lms through different characterization techniques. A correlation between the material parameters with the device performance has been established to ensure LVO perovskite for photovoltaic applications. This analysis will aid researchers to realize Mott insulators as light absorber material.
关键词： photovoltaic material,Mott insulator,Thin ?lm solar cell,oxide perovskites
更新于2025-09-11 14:15:04
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Dependence of Photovoltaic Properties of Spray-Pyrolyzed F-Doped SnO2 Thin Film on Spray Solution Preparation Method
摘要： Spray pyrolysis deposition of SnCl2.2H2O- and NH4F-containing solution is an appropriate method for deposition of ?uorine-doped tin oxide (FTO), which has extensive applications in photovoltaic devices. According to a literature review, several spray preparation methods have been studied. These methods lead to both precipitated and unprecipitated spray solutions. Precipitated and unprecipitated solutions were used for deposition of FTO thin ?lms. FTO obtained from unprecipitated solution yielded the lowest sheet resistance and resistivity, which was due to its highest electron concentration (ne). However, precipitation had no in?uence on electron mobility. The x-ray diffraction patterns of precipitates showed the presence of Sn- and F-containing compounds, which implied partial depletion of F and Sn from solutions. As a result, a lower amount of F(cid:2) ions was incorporated into FTO, which led to lower ne. In addition, partial depletion of Sn led to slightly smaller FTO thickness. Finally, FTO thin ?lm deposited from unprecipitated solution gave the highest ?gure of merit. This means that precipitation in the precursor solution has deleterious effects on electrical and optical properties.
关键词： Fluorine-doped tin oxide,spray pyrolysis deposition,transparent conducting oxide,thin ?lm
更新于2025-09-11 14:15:04
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Correlation between composition, microstructure, and emission properties in Nd-doped Si-rich Si oxynitride films: investigation into the nature of the sensitizer
摘要： Rare earth (RE) ions doped in Si-based materials, compatible with Si technology, are promising compounds with regards to optical communication and energy conversion. In this article, we show the emission properties of Nd-doped Si-rich Si oxynitride (Nd-SRSON) ?lms, and their dependence on the dangling bond density and the nature of the sensitizer. These ?lms were prepared by reactive magnetron sputtering and post-annealing. The ?lm composition, microstructure, and emission properties were investigated as a function of deposition parameters and annealing temperatures. Both Fourier transform infrared (FTIR) and ellipsometry spectroscopy measurements have con?rmed that the sample composition (Si/N ratio) can be carefully tuned by varying the ratio of reactive nitrogen to argon in the sputtering plasma. Moreover, FTIR and x-ray photoelectron spectroscopy measurements demonstrate the existence of both nitrogen and oxygen dangling bonds (N? and O?) in as-deposited samples. These dangling bonds were passivated during annealing. Under non-resonant excitation at 488 nm, the ?lms exhibit a signi?cant photoluminescence (PL) signal from Nd3+ ions demonstrating the occurrence of an effective sensitization of Nd3+ ions in the host matrix. Both PL excitation and ellipsometry results (the energy band gap from new amorphous model) exclude the sensitization by an exciton with energy over the band gap, whereas the presence of Si agglomerates, at the atomic scale, have been identi?ed as effective sensitizers towards Nd3+ ions. This work not only provides knowledge to optimize Si-based materials for favorable emission properties, but also, presents a universal methodology to investigate the nature of sensitizers for RE emitters. This allows one to ?nd correlations between composition, microstructure, and emission properties.
关键词： photoluminescence,rare earth,neodymium,non-resonant excitation,thin ?lm,Si-rich Si oxynitride
更新于2025-09-10 09:29:36