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Volatile Memory Characteristics of a Solution-Processed Tin Oxide Semiconductor
摘要： In this paper, we demonstrate and study volatile memory characteristics of the sol-gel SnOx semiconductor. The SnOx exhibits a significant self-rectifying behavior and high nonlinearity. Low reverse-biased currents and high forward-biased currents are observed in the positive and negative voltage regions, respectively. The rectifying ratio can reach 3.7 × 10^5, and the selection ratio (I@Vread/I@0.5Vread) is 10^2. A pinched current hysteresis is found in the forward-biased region, which indicates the volatile memory characteristics of the SnOx memory. The resistance ratio between the high-resistance state (HRS) and low-resistance state (LRS) is ~10^5. In addition, the stability test reveals that the memory can repeatedly operate for over 1.5 × 10^3 cycles.
关键词： Hysteresis,Solution process,Oxide semiconductor,Thin film,Electrical characteristics
更新于2025-09-23 15:22:29
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Nickel Doping on Cobalt Oxide Thin Film Using by Sputtering Process-a Route for Surface Modification for p-type Metal Oxide Gas Sensors
摘要： This study proposes a route for surface modification for p-type cobalt oxide-based gas sensors. We deposit a thin layer of Ni on the Co oxide film by sputtering process and annealed at 350 °C for 15 min in air, which changes a typical sputtered film surface into one interlaced with a high density of hemispherical nanoparticles. Our in-depth materials characterization using transmission electron microscopy discloses that the microstructure evolution is the result of an extensive inter-diffusion of Co and Ni, and that the nanoparticles are nickel oxide dissolving some Co. Sensor performance measurement unfolds that the surface modification results in a significant sensitivity enhancement, nearly 200% increase for toluene (at 250 °C) and CO (at 200 °C) gases in comparison with the undoped samples.
关键词： Toluene,Co oxide thin film,Ni-doped,Gas sensor,RF sputtering,CO
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE 13th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) - Singapore, Singapore (2018.4.22-2018.4.26)] 2018 IEEE 13th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) - Self-Powered, High-Sensitive Human Cutaneous Activities Sensor
摘要： A self-powered piezoelectric sensor based on lead-free (K,Na)NbO3 (KNN) thin film for human health monitoring is presented. The sensor is fabricated on a flexible substrate and exhibits high sensitivity and stability. It can detect various physiological signals such as pulse, respiration, and body movement. The results demonstrate its potential for wearable health monitoring applications.
关键词： piezoelectric sensor,KNN thin film,health monitoring,lead-free,flexible substrate,wearable
更新于2025-09-23 15:22:29
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Luminescent sensing film based on sulfosalicylic acid modified Tb(III)-doped yttrium hydroxide nanosheets
摘要： Sulfosalicylic acid (SSA) was used as an intercalation agent and an excellent antenna to synthesize layered rare-earth hydroxide (LRH) materials and directly obtain SSA-modified terbium-doped ytterbium hydroxide nanosheets by mechanical exfoliation. The crystal structure and morphologies of the LRHs and nanosheets were determined by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The particle size and zeta potential of the prepared nanosheets were also analyzed. The as-prepared nanosheets exhibited excellent luminescent properties. The positively charged nanosheets were electrophoretically deposited on a conductive glass to form a thin film. The luminescence of this thin film can be quenched by chromate (CrO4^2-) and bilirubin (BR), which shows good sensing properties. The quenching mechanism of the sensing film by CrO4^2- and BR was discussed based on the spectra and structure of the film.
关键词： chromate (CrO4^2-),thin-film sensor,nanosheets,bilirubin (BR),rare-earth hydroxide
更新于2025-09-23 15:22:29
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Solution-processed amorphous gallium-tin oxide thin film for low-voltage, high-performance transistors; 溶液法制备低电压及高性能非晶GaSnO薄膜晶体管;
摘要： Gallium-tin oxide (GTO) semiconductor thin films were prepared by spin-coating with 2-methoxyethanol as the solvent. Their crystal structures, optical transparency, chemical states and surface morphologies, along with the electrical properties, were dependent on Ga contents and annealing temperatures. The optimized GTO channel layer was applied in the high-k Al2O3 thin film transistor (TFT) with a low operation voltage of 2 V, a maximum field-effect mobility of 69 cm2 V?1 s?1, a subthreshold swing (SS) of 76 mV dec?1, a threshold voltage of 0.67 V and an on-off current ratio of 1.8×107. The solution-processed amorphous-GTO-TFTs would promote the development of low-consumption, low-cost and high performance In-free TFT devices.
关键词： GTO semiconductor films,thin-film transistor,Al2O3 dielectric,stability
更新于2025-09-23 15:22:29
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The Implementation of Fundamental Digital Circuits With ITO-Stabilized ZnO TFTs for Transparent Electronics
摘要： In this paper, several fundamental pseudo-CMOS digital circuits with n-type indium tin oxide-stabilized ZnO thin-film transistors (TFTs) were implemented and investigated. The optical transmittance of circuits varied from 77% to 92% throughout the visible wavelength band. Electrically, the operation frequency of inverters, nor gates, nand gates, D latches, and D flip flops were all found to exceed 10 kHz with a supply voltage of 10 V. Besides, 13-stage ring oscillators could be operated at 42 kHz with a propagation delay time of 0.92 μs when the supply voltage was set as 20 V. Among the state-of-the-art transparent designs, these proposed circuits based on the ITO-stabilized ZnO TFTs exhibited high-speed performance, which were promising as building blocks for transparent electronics with moderate frequency requirements.
关键词： transparent electronics,Digital circuits,indium tin oxide-stabilized ZnO,thin-film transistors (TFTs),ring oscillator (RO)
更新于2025-09-23 15:22:29
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Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors
摘要： We investigated the chemical bonds in nitrogen-doped amorphous InGaZnO (a-IGZO:N) thin films with an X-ray photoelectron spectrometer (XPS). The doped nitrogen atoms preferentially combined with Ga cations and formed stable Ga-N bonds for low nitrogen-doping (N-doping), but additionally formed less stable In-N and Zn-N bonds for high N-doping. The stable Ga-N bonds and few defects made the variation in oxygen vacancy (VO) more difficult and hence achieved better stability of thin film transistors (TFTs) with low doped a-IGZO:N channel layers. Contrarily, the less stable In-N and Zn-N bonds as well as excess defects led to an easier change in VO and thus more unstable a-IGZO:N TFTs for high N-doping.
关键词： Amorphous InGaZnO (a-IGZO),Thin film transistors (TFTs),Nitrogen doping (N-doping),Chemical bonds
更新于2025-09-23 15:22:29
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Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication
摘要： Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm. The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to -60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate.
关键词： optical emission spectroscopy,Langmuir probe,thin film,magnetron sputtering,Copper oxide
更新于2025-09-23 15:22:29
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Samarium thin films molecular plated from <i>N</i> , <i>N</i> -dimethylformamide characterized by XPS
摘要： Characterization of samarium thin films molecular plated from N,N-dimethylformamide solutions onto stainless steel substrates, with either mirrorlike or brushed finishes, was carried out using a Thermo Scientific K-Alpha x-ray photoelectron spectrometer. Survey scans of the two specimens showed the presence of samarium, carbon, and oxygen with minor amounts of sodium. High-resolution spectra were then taken of the Sm 3d, O 1s, and C 1s regions. The chemical compositions of the two samples were found to be very similar, with the key difference being the relative amounts of two carbon species. Spectra from the survey and narrow high-resolution scans of the Sm 3d, O 1s, and C 1s regions are reported herein.
关键词： thin film,electrodeposition,samarium,molecular plating
更新于2025-09-23 15:22:29
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ENHANCED STRUCTURAL AND ELECTRICAL PROPERTIES OF LEAD-FREE Y-DOPED (K, Na) NbO3 THIN FILMS
摘要： Yttrium- doped KNN thin films were grown on Si substrates using the sol-gel technique. The profound effects of Yttrium with different content element (mol % = 0, 0.1, 0.3, 0.5, 0.7 and 0.9) on the structural and electrical properties of KNN films were analyzed. The doped samples demonstrated a mainly uniform and homogenous microstructure with grain size less than 100 nm. The existence of Y Kα line shown in EDX spectrum confirmed the presence of Y-dopant in KNN based-compound. Small shift position of the Raman peaks indicated that Y incorporated on the interstitial A-site while broaden FWHM ascribed that Y preferably enters B-site lattice at high dopant concentration. The enhanced electrical resistivity at 0.5 mol % Y suggested that more conduction electrons were formed in KNN lattice structure.
关键词： doped,rare-earth,KNN,thin film,yttrium
更新于2025-09-23 15:22:29