研究目的
To investigate the effects of Yttrium doping on the structural and electrical properties of lead-free (K, Na)NbO3 thin films synthesized using the sol-gel technique, aiming to enhance their properties as an alternative to lead-based piezoelectric materials.
研究成果
Y doping enhances the structural and electrical properties of KNN thin films, with optimal performance at 0.5 mol % Y. It promotes densification and fine microstructure, influences lattice site occupancy (A-site at low concentrations, B-site at high concentrations), and improves electrical resistivity due to increased conduction electrons. This provides a viable approach for developing lead-free piezoelectric materials, with future work needed to explore broader doping ranges and applications.
研究不足
The study is limited to thin films on Si substrates using the sol-gel method; other substrates or synthesis methods were not explored. The range of Y doping concentrations (up to 0.9 mol %) may not cover all possible effects, and the focus is on room temperature measurements, potentially missing temperature-dependent behaviors. The mechanisms of dopant incorporation and electrical properties are inferred from structural changes, requiring further validation.
1：Experimental Design and Method Selection:
The study used the sol-gel technique to synthesize Y-doped KNN thin films on Si substrates, with varying Y content (0 to 0.9 mol %). The method was chosen for its ability to produce homogeneous films and control dopant concentration.
2：9 mol %). The method was chosen for its ability to produce homogeneous films and control dopant concentration.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: Samples were prepared with different Y concentrations (0, 0.1, 0.3, 0.5, 0.7, 0.9 mol %) added to KNN precursor solutions. Data were obtained from structural and electrical analyses.
3：1, 3, 5, 7, 9 mol %) added to KNN precursor solutions. Data were obtained from structural and electrical analyses.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included a spin coater for deposition, furnace for annealing and pyrolysis, Field Emission Scanning Electron Microscopy (FE-SEM) for microstructure analysis, Raman scattering spectrometer for vibration properties, and equipment for resistivity measurements. Materials included potassium acetate, sodium acetate, niobium ethoxide, acetylacetone, 2-methoxyethanol, and Yttrium dopant.
4：Experimental Procedures and Operational Workflow:
Precursor solutions were prepared by dissolving chemicals in 2-methoxyethanol, stirred for 1 hour, deposited on Si substrates via spin coating at 2000-3000 rpm for 60 seconds, followed by pyrolysis at 300°C and annealing at 650°C. The coating/heat treatment cycle was repeated to achieve a film thickness of approximately 200 nm. Structural analysis (FE-SEM, EDX, Raman spectroscopy) and electrical resistivity measurements at room temperature with 1 kHz frequency were performed.
5：Data Analysis Methods:
EDX spectra were used for chemical composition confirmation, FE-SEM for grain morphology, Raman spectra analyzed for peak shifts and FWHM using Lorentzian fitting, and resistivity data were plotted against Y content.
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