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Subchronic intravenous toxicity study of biofunctional ZnO and its application as a fluorescence probe for cell-specific targeting
摘要： Successful development of safe and highly effective nanoprobes for targeted imaging of in vivo early cancer is a great challenge. Herein, we choose the visible‐light emitting zinc oxide non–core/shell type nanoparticle (NP) fluorophores (ZHIE) as prototypical materials. We have reported on these materials previously. The results showed that the ZHIE NPs exhibited good water solubility and good biocompatibility. This study was conducted to investigate the toxicity of ZHIE NPs when intravenously administered to mice repeatedly at the dose required for successful tumor imaging in vivo. Anti‐macrophage‐1 antigen (Mac1), a macrophage differentiation antigen, antibody‐conjugated ZHIE NPs successfully realized targeted imaging of murine macrophage cell line Raw264.7 cells. In conclusion, ZHIE NPs are not toxic in vivo and antibody‐conjugated ZHIE NPs have great potential in applications, such as single cell labeling.
关键词： subchronic toxicity,zinc oxide (ZnO) nanoparticles,fluorescence probe
更新于2025-09-23 15:23:52
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Length-Dependent Electronic Transport Properties of the ZnO Nanorod
摘要： The two-probe device of nanorod-coupled gold electrodes is constructed based on the triangular zinc oxide (ZnO) nanorod. The length-dependent electronic transport properties of the ZnO nanorod was studied by density functional theory (DFT) with the non-equilibrium Green’s function (NEGF). Our results show that the current of devices decreases with increasing length of the ZnO nanorod at the same bias voltage. Metal-like behavior for the short nanorod was observed under small bias voltage due to the interface state between gold and the ZnO nanorod. However, the influence of the interface on the device was negligible under the condition that the length of the ZnO nanorod increases. Moreover, the rectification behavior was observed for the longer ZnO nanorod, which was analyzed from the transmission spectra and molecular-projected self-consistent Hamiltonian (MPSH) states. Our results indicate that the ZnO nanorod would have potential applications in electronic-integrated devices.
关键词： current–voltage (I–V) curves,molecular-projected self-consistent Hamiltonian (MPSH),transport properties,zinc oxide (ZnO) nanorod,transmission spectrum
更新于2025-09-23 15:23:52
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Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors
摘要： In this paper, we have investigated the effects of yttrium (Y) doping on the electrical performance and stability of ZnO thin film transistors (TFTs). Here, Y-doped ZnO TFTs were fabricated by using radio frequency magnetron sputtering at 150 °C. As a result, the 1% Y-doped ZnO TFT exhibits a small threshold voltage shifts of 2.5 V under positive bias stress and ?2.8 V under negative bias stress as well as desirable device performance with field effect mobility of 9.8 cm2/V s, a subthreshold swing of 320 mV/decade and on/off current ratio of 107, respectively. Based on the XPS analysis and electrical characterizations, the improvement in stability and electrical properties of ZnO TFTs were attributed to the appropriate Y doping concentration, which not only could control the carrier concentration and broaden the band gap of ZnO film, but also suppress the oxygen vacancy defects and passivate the trap density at the SiO2/ZnO interfaces. Consequently, the high stability and excellent electrical performances of Y-doped ZnO TFTs show great potential for use in flat panel displays.
关键词： Doping,Zinc oxide (ZnO),Thin film transistors (TFTs),Bias stress stability
更新于2025-09-23 15:22:29
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An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film with Radio Frequency Sputtered Gold Schottky Contacts
摘要： Electrical and hydrogen sensing characteristics of radio frequency sputtered Au/ZnO thin film Schottky diodes on n-silicon substrate have been investigated over a wide temperature range. Current-voltage characterizations of the device in the temperature range of 25°C to 200°C confirm its excellent rectifying property with forward to reverse current ratio of 1610 at an external bias of 5 V. Ideality factor in the range of 4.12 to 2.98 is obtained for Au/ZnO Schottky diode in the aforementioned temperature range, at atmospheric conditions. On exposing diode to hydrogen, a reduction in ideality factor is observed which makes thermionic emission more prominent. The proposed device has proven to be hydrogen sensitive, on account of the lateral shift observed in I ? V characteristics at different hydrogen concentrations (50 ppm-1000 ppm). Maximum barrier height variation of 99 meV and sensitivity of 144% have been observed at 1000 ppm hydrogen at 200°C. A Detailed perusal of the steady-state reaction kinetics of the sensor using I ? V characteristics affirmed that the atomistic hydrogen adsorption at Au/ZnO interface is accountable for the barrier height modulation. The studied sensor depicts remarkable performance for high-temperature detection.
关键词： Hydrogen sensing,Zinc oxide (ZnO) thin film,Electrical characteristics,Schottky diode,Metal-semiconductor interface,Palladium catalyst
更新于2025-09-23 15:22:29
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Analysis of the Value Proposition of High-efficiency, Multijunction Solar Modules for Residential Rooftop Installations
摘要： We report for the ?rst time on the impact of a printed indium tin oxide (ITO) layer inserted between a printed silver conductor and solution processed zinc oxide (ZnO) leading to an optimized semiconductor/contact scheme for full print integration. Introducing the ITO interlayer, the contact resistance is reduced by two orders of magnitude. Nanoparticle thin-?lm transistors (TFTs) in this Ag/ITO contact con?guration show improved saturation mobility of 0.53 cm V s with respect to 0.08 cm V s without ITO interlayer. The contact improvement can be attributed to either an increased charge carrier concentration or a reduction of band offsets at the ZnO/electrode interface.
关键词： indium–tin–oxide,zinc oxide (ZnO),thin-?lm transistors (TFTs),Contact resistance
更新于2025-09-23 15:19:57
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Dependance of Poly(acrylic acid) Interfacial Adhesion on the Nanostructure of Electrodeposited ZnO Films
摘要： Understanding the impact of the intricate morphology and surface chemistry of ZnO nanorod arrays on their interactions with polyelectrolyte polymers is crucial for the development of nascent ZnO-based adhesion-promoting materials. AFM based Single Molecule Force Spectroscopy (SMFS) was applied for the analysis of the adsorption of poly(acrylic acid) (PAA) on zinc oxide (ZnO) film covered stainless steel substrates in aqueous electrolytes at pH 7. Based on the electrodeposition process, the morphology of zinc oxide films could be varied ranging from platelet-like crystals to nanorods. This approach allowed for the morphology dependent analysis of macromolecular adsorption processes on complex ZnO nanostructures which have diverse applications in the field of adhesion-promoting thin films. The surface chemical composition, as determined by X-ray photoelectron spectroscopy, could be correlated to the AFM-based desorption studies. Only equilibrium desorption events (plateaus), centered at 42 pN, were observed on mirror polished, preconditioned stainless steel. However, for platelet-like ZnO films, the poly(acrylic acid) desorption showed a mixture of rupture events (mean rupture forces of about 350 pN) and equilibrium desorption, while ZnO nanorod structures showed solely rupture events with mean rupture forces of about 1300 pN. These results indicate that simultaneous multiple ruptures of carboxylate-zinc bonds occur due to the macromolecular coordination of poly(acrylic acid) to the ZnO nanorods. The analysis of the interfacial adhesion processes is further supported by the dwell time dependence of desorption processes.
关键词： poly(acrylic acid),Single Molecule Force Spectroscopy (SMFS),worm like chain (WLC) model,stainless steel,zinc oxide (ZnO),electrochemical deposition,molecular adhesion,adsorption free energy
更新于2025-09-19 17:15:36
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Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes
摘要： We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (～1-μm thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, Lh, coming from the p-contact. Moreover, the evaluation of Lh is not easy and generally requires the design and the fabrication of several LED test patterns. We propose a simple and effective method to calculate Lh, just based on simple considerations on I–V characteristics, and a way to improve the injection efficiency in the n region based on a noncircular electrode geometry. In particular, an interdigitated electrode structure is proved to be more efficient in terms of hole injection from n- to p-region.
关键词： zinc oxide (ZnO) nanorods,ZnO/GaN heterostructures,ZnO/GaN-based light-emitting diodes (LEDs),contact injection,current spreading length,Chemical-bath deposition (CBD)
更新于2025-09-16 10:30:52
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Properties of boron doped ZnO films prepared by reactive sputtering method: Application to amorphous silicon thin film solar cells
摘要： Reactive sputtered boron-doped zinc oxide (BZO) film was deposited from argon, hydrogen and boron gas mixture. The reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide target. Textured surface was obtained in the as-deposited films. The surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration ratio. By varying the gas concentration ratio, the best obtained resistivity ~ 6.51×10-4 Ω-cm, mobility ~ 19.05 cm2 V-1 s-1 and sheet resistance ~ 7.23 Ω/□ were obtained. At lower wavelength of light, the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are >85%. We also fabricated amorphous silicon (a-Si) thin film solar cell on the best obtained BZO layers. The overall efficiency of the a-Si solar cell is 8.14%, found on optimized BZO layer.
关键词： amorphous silicon,BZO,solar cells,Zinc oxide (ZnO),Magnetron reactive sputtering
更新于2025-09-12 10:27:22
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Electroluminescence of intrashell transitions in Eu doped single ZnO nanowires
摘要： Tunable nanoscale light emitters are essential to accomplish future multifunctional optoelectronic nano-devices. Here, we present an approach for achieving red electroluminescence from single ZnO nanowires implanted with Europium ions. The electroluminescence is emitted mainly from the end facets of ZnO nanowires at room temperature under the application of an AC voltage. The corresponding electroluminescence spectrum is attributed to the radiative intrashell transitions of the Eu ions, while contributions from near band edge or deep level emission of the ZnO remain absent. The total intensity of the electroluminescence is linearly proportional to the length of the nanowires, whereas there is no clear correlation with other morphology factors of the nanowire based device such as the diameter. Furthermore, the underlying excitation mechanism of the electroluminescence is proposed as direct-impact excitation of Eu ions by hot electrons in the ZnO nanowires.
关键词： electroluminescence,Zinc oxide (ZnO),Europium (Eu),nanowires,rare earth elements,ion beam doping
更新于2025-09-09 09:28:46