研究目的
To obtain narrow linewidth semiconductor laser around 1564 nm using a simple method for large-scale production.
研究成果
A narrow linewidth DBR semiconductor laser based on HOBGs structure was developed, achieving a wavelength peak of 1564nm, output power of 9.9 mW, SMSR more than 30 dB, and a linewidth of 70 KHz. The method avoids the high cost and low yield problem of complex lithography technologies, providing a simple solution for large-scale production.
研究不足
The high-order scattering loss due to HOBGs structure increases the threshold current and reduces the output power and slope efficiency. The grating trench cannot be over-etched to avoid high order scattering enhancement.
1：Experimental Design and Method Selection:
The DBR laser with high-order Bragg gratings (HOBGs) was designed using the commercial software COMSOL Multiphysics. The grating parameters were calculated to achieve narrow linewidth emission.
2：Sample Selection and Data Sources:
The laser was fabricated on a n-InP substrate with a vertical structure consisting of various layers grown by metal-organic chemical vapor deposition (MOCVD).
3：List of Experimental Equipment and Materials:
i-line lithography technology was used for grating definition, inductively coupled plasma etching (ICP) for grating etching, and plasma enhanced chemical vapor deposition (PECVD) for silica layer deposition.
4：Experimental Procedures and Operational Workflow:
The process included grating definition, etching, ridge waveguide creation, passivation, metallization, and chip cleaving. The laser was then packaged into a temperature control module for testing.
5：Data Analysis Methods:
The spectral linewidth was characterized using the power spectral density method, and the frequency noise was measured by an OE4000 cross-correlation homodyne phase/frequency noise automatic test system.
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