研究目的
Investigating the structural, electronic, and optical properties of Cu2SnS3 (CTS) thin films for potential solar cell applications.
研究成果
The study demonstrates that CTS is a direct band gap semiconductor with a large absorption coefficient, making it a potential alternative absorber material for thin-film solar cells. The monoclinic phase of CTS, obtained at higher annealing temperatures, is most suitable for photovoltaic applications due to its favorable electronic and optical properties.
研究不足
The study is limited to the characterization of CTS thin films and does not explore the fabrication of complete solar cell devices. The computational study does not include spin-orbit coupling effect and large dense k-mash due to higher computational cost.
1：Experimental Design and Method Selection:
CTS thin films were grown using pulsed laser deposition (PLD) method and characterized using XRD, Raman, UV–Vis-NIR spectroscopy, and SEM. Theoretical analysis was performed using DFT.
2：Sample Selection and Data Sources:
CTS pellet was prepared by mixing CuS and SnS powders in a 2:1 stoichiometric ratio, pressed into a pellet, and sintered at 700 °C for 12 hours.
3：List of Experimental Equipment and Materials:
Nd-YAG laser (266 nm, 9 ns pulse width, 5 Hz repetition rate), Philips X'pert PRO-PW XRD, RENISHAW in Via confocal Raman microscope, PerkinElmer Lambda 1050 UV–Vis-NIR spectrophotometer, FEI Quanta FEG 200 SEM, Dektak XT optical profilometer.
4：Experimental Procedures and Operational Workflow:
The pellet was ablated using a laser beam focused onto the pellet at an incident angle of 45° through a lens. The deposited films were annealed in argon atmosphere at different temperatures.
5：Data Analysis Methods:
The optical absorption coefficient and band gaps were calculated using transmittance spectra. DFT calculations were performed using VASP code with HSE functional.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
