研究目的
Demonstrating the possibility of incorporating plasmonic Au and Ag nanoinclusions in III-V nitrides with various geometries to achieve tunable optical properties for applications in infrared sensing or all optical based integrated circuits.
研究成果
The study successfully demonstrated the incorporation of plasmonic Au and Ag nanoinclusions in AlN, achieving tunable optical properties and enhanced optical anisotropy. This platform offers potential for applications in infrared sensing and all optical based integrated circuits.
研究不足
The complexity under different growth conditions of metal and III-V nitrides as well as their lattice compatibility presents challenges. The study focuses on AlN as a model system, and further research is needed to extend this approach to other III-V nitrides.
1：Experimental Design and Method Selection:
The study used a pulsed laser deposition (PLD) system for thin film growth, focusing on AlN-based nanocomposites with Au and Ag nanoinclusions. The growth conditions were carefully controlled to achieve various geometries of nanoinclusions.
2：Sample Selection and Data Sources:
Films were deposited on c-cut sapphire and (001) Si substrates under vacuum and N2 atmosphere conditions.
3：List of Experimental Equipment and Materials:
A KrF excimer laser (Lambda Physik Compex Pro 205, λ = 248 nm) was used for PLD. Characterization included XRD, TEM, HAADF-STEM, SAED, EDS, UV-Vis spectrophotometry, ellipsometry, and FTIR spectroscopy.
4：Experimental Procedures and Operational Workflow:
The films were deposited at 700°C, followed by cooling under vacuum. Microstructure and optical properties were characterized using various techniques.
5：Data Analysis Methods:
Optical and electrical properties were analyzed to determine bandgap tuning, plasmonic resonance, and dielectric function anisotropy.
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