研究目的
Investigating the performance of high-brightness tapered photonic crystal diode lasers with narrow-emitting aperture in the 980 nm range.
研究成果
The designed and fabricated narrow light-emitting aperture tapered PC diode lasers in the 980 nm range achieved high output power, narrow beam divergence, and high efficiency. The study demonstrates the potential for achieving high-brightness laser beams with careful design and optimization.
研究不足
The study is limited to the 980 nm range and the specific design of the tapered photonic crystal diode laser. The performance may vary with different designs or materials.
1：Experimental Design and Method Selection:
The study involves the design and fabrication of tapered photonic crystal diode lasers with a narrow-emitting aperture. The methodology includes the use of a photonic crystal structure to achieve high brightness and narrow beam divergence.
2：Sample Selection and Data Sources:
The epitaxial layer is grown on n-doped (001) oriented GaAs substrates using metal-organic chemical vapor deposition (MOCVD).
3：List of Experimental Equipment and Materials:
The device fabrication involves standard photolithography, inductively coupled plasma etching, and deposition of Ti/Pt/Au and AuGeNi/Au contact metals.
4：Experimental Procedures and Operational Workflow:
The device has a total cavity length of 4 mm, consisting of a 1 mm long ridge waveguide and a 3 mm long tapered waveguide with a 20 μm light-emitting aperture. The cleaved bars are processed with optimized facet passivation with Al2O3 for high power output.
5：Data Analysis Methods:
The beam quality factors M2 were measured by a commercial beam profile system employing the second moment method recommended by ISO 11146.
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