摘要： This paper is concerned with the numerical modelling of a micromorph silicon tandem solar cell (a-Si:H/μc-Si:H), under series (two-terminal: 2T) and independent (four-terminal: 4T) electrical connection. The study is performed using the simulation software Silvaco TCAD. Both the initial (un-degraded or annealed) state, and the light induced degradation one (well-known Staebler–Wronski effect in a-Si:H) are considered for the studied solar cell, operating under the standard global solar spectrum (AM1.5G). The 2T- and 4T-device optimization is carried out under the effects of the intrinsic (i)-layer thickness of the two sub-cells, and the free carrier mobilities through these layers. By increasing the i-layer thickness of the two sub-cells, the 2T-micromorph tandem cell reveals an optimal conversion efficiency ?? of 10% and 7.77% corresponding, respectively, to the initial and degraded states. The 4T-configuration exhibits a relatively better ?? of 10.94% at initial state, reduced only to 9.59% at the degraded one. Further improvement of the 2T and 4T-cell output parameters is obtained by increasing the free carrier mobilities, particularly through the top-cell i-layer. By this way, the better ?? is also ensured by the 4T-device, which displays an initial state-?? of 12.31%, reduced only to 11.43% at the degraded state. However, the improved efficiencies reached by the 2T-configuration are 11.87% and 10.41% corresponding, respectively, to the initial and degraded states.