研究目的
Investigating the impact of random alloy fluctuations on the electron transmission probability in InGaN/GaN multi-quantum well systems.
研究成果
Random alloy fluctuations significantly affect the transmission probability in InGaN/GaN MQW systems, especially for the energetically lowest bound states in the quantum wells. This framework is a good starting point for future investigations into the transport properties of InGaN/GaN LEDs on an atomistic level.
研究不足
The study neglects built-in fields and local strain effects initially to concentrate on the impact of random alloy fluctuations.
1：Experimental Design and Method Selection:
The study uses a combination of tight-binding theory and Non-Equilibrium Green’s Function theories for a fully three-dimensional treatment of the system.
2：Sample Selection and Data Sources:
A MQW system consisting of two
3：6 nm In15Ga85N QWs separated by 6 nm wide GaN barriers is chosen. List of Experimental Equipment and Materials:
The calculations are performed using the NEGF solver OMEN.
4：Experimental Procedures and Operational Workflow:
The impact of random alloy fluctuations is studied by comparing results from a virtual crystal approximation with those accounting for random alloy fluctuations.
5：Data Analysis Methods:
The transmission probability for electrons through the MQW systems is analyzed.
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