研究目的
To develop low-loss, broadband radio frequency (RF) interconnects for denser photonic integrated circuits (PICs) by enabling millimeter long interconnects and crossings.
研究成果
The feasibility study demonstrated the fabrication of low-loss RF interconnects on n-doped InP substrates, achieving a 3-dB bandwidth of up to 67 GHz and attenuation values as low as 0.5 dB/mm. The impedance could be engineered by adjusting the signal width.
研究不足
The study focuses on the feasibility of integrating low-loss RF lines and does not extensively cover the scalability or mass production challenges.
1：Experimental Design and Method Selection:
The study explores different configurations of RF lines, including CPW, CPWG, and CPWG with vias, to achieve low-loss RF interconnects.
2：Sample Selection and Data Sources:
Fabricated coplanar waveguides (CPW) on both n-doped and semi-insulating substrates.
3：List of Experimental Equipment and Materials:
Used a 67 GHz vector network analyzer for measurements, BCB3022 for the intermediate layer, and Ti-Au for metal layers.
4：Experimental Procedures and Operational Workflow:
Fabrication involved depositing metal layers, spinning and curing BCB, creating slopes in photoresist, and transferring them to BCB via RIE.
5：Data Analysis Methods:
Measured electrical S-parameters to evaluate the performance of the RF lines.
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