研究目的
To review dynamical characteristics of Qdot lasers epitaxially grown on Ge or Si, in comparison with those of Qdot lasers on native GaAs substrate, and discuss properties of linewidth broadening factor, laser noise and its sensitivity to optical feedback, intensity modulation, as well as mode locking operation.
研究成果
The investigation of dynamical characteristics of Qdot lasers epitaxially grown on Ge or Si is beneficial for guiding the design of PICs in optical communications and optical computations. The paper provides an overview of recent progresses on the laser dynamics, including the LBF, the RIN and the FN, the modulation response, the sensitivity to optical feedback, and mode-locked performances.
研究不足
The paper does not explicitly mention specific limitations of the research.
