研究目的

Investigating the attosecond carrier dynamics induced by a resonant intense laser pulse in gallium arsenide (GaAs) to understand the dominating transition in the transient response and the influence of the non-linear interplay between inter- and intra-band transitions on the ultrafast electron injection from the valence into the conduction band.

研究成果

The attosecond dynamics induced by the IR pulse is dominated by intra-band motion, rather than by inter-band transitions. Intra-band motion assists the carrier injection induced by the inter-band transition significantly. The findings represent an important advance in understanding attosecond carrier injection in optical fields, which has implications for future devices.

研究不足

The study focuses on gallium arsenide (GaAs) and Al0.8Ga0.2As, and the findings may not be directly applicable to other materials. The experimental setup requires advanced equipment for generating intense few-cycle IR pump pulses and attosecond extreme-ultraviolet (XUV) probe pulses.