研究目的
To explore proper model calibration of InGaAs/InP diode dark currents, which originate from space charge region generation via Shockley-Read-Hall (SRH), bulk diffusion from neutral InGaAs regions, and perimeter leakage.
研究成果
The perimeter contribution to the dark current is explored using a numerical model calibrated to experimental results. The importance of the guard ring is emphasized, including the impact of diffusion from the neutral regions of the InGaAs material.
研究不足
The perimeter leakage depends on the process used to fabricate the final devices, and can vary across the wafer as well as from wafer to wafer. Statistics are essential to assess the contributions of each, rather than the best device on the best wafer.
1：Experimental Design and Method Selection:
The study uses guarded test structures of various areas to investigate contributions to dark current.
2：Sample Selection and Data Sources:
Test structures included in Process Control Monitors (PCM) at various locations on the wafer.
3：List of Experimental Equipment and Materials:
A Keysight 4155 semiconductor parameter analyzer was used for electrical measurements.
4：Experimental Procedures and Operational Workflow:
The bias on the guard was equivalent to the diode bias, with triaxial cables connecting the source measure units (SMU) of the 4155 to the low noise contact probes.
5：Data Analysis Methods:
The dark current, scaled by the active diode area, results in a dark current density which can be plotted as a function of perimeter to area ratio (P/A).
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