研究目的
Investigating the fabrication and performance of high-speed large-area silicon photodetectors on silicon-on-insulator (SOI) substrates for 850-nm optical receiver applications.
研究成果
The article presents the fabrication, measurement, and analysis of large-area coplanar interdigital PDs on an SOI platform. The optimized performance occurs in a device with a detector area of 2300 μm2, a dark current of 39 pA, and a 3-dB bandwidth of 14.1 GHz at ?10 V, making the proposed PD suitable for high-speed 850-nm optical receivers.
研究不足
The low level of responsivity is mainly due to the optical absorption depth of only 220 nm compared to the long penetration depth of 850-nm laser in crystalline Si, and the lack of effective antireflection coating. The measured results for the bandwidth are smaller than the theoretically calculated value because of some neglected impedance and the unavoidable diffusion mechanism.
