研究目的
To achieve simultaneously high power conversion efficiency (PCE) and good photoresponse switchability in ferroelectric photovoltaic (FEPV) devices by integrating narrow-gap semiconductor LaVO3 (LVO) with ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT).
研究成果
The integration of narrow-gap semiconductor LVO with ferroelectric PZT in perovskite heterostructures enables simultaneous enhancement of PCE and maintenance of good photoresponse switchability, offering a promising approach for high-efficiency and highly switchable FEPV devices.
研究不足
The achieved highest PCE (~0.01%) is still low, indicating room for improvement in semiconductor layer absorption and photoresponsivity, ferroelectric layer bandgap, and SEM/FE interface quality.
1：Experimental Design and Method Selection:
The study involves the fabrication of perovskite heterostructures comprising LVO and PZT layers, characterized by XRD, RSM, AFM, PFM, and TEM to analyze their structural and morphological properties. Electrical and optical measurements were conducted to evaluate the photovoltaic performance.
2：Sample Selection and Data Sources:
Samples were prepared using pulsed laser deposition (PLD) on STO substrates with SRO bottom electrodes. LVO and PZT layers of varying thicknesses were deposited, followed by Pt top electrodes.
3：List of Experimental Equipment and Materials:
Equipment includes PLD system, XRD, RSM, AFM, PFM, TEM, PPMS, ferroelectric workstation, source meter, UV/Vis spectrophotometers, and optical power meter. Materials include STO substrates, SRO, PZT, LVO, and Pt electrodes.
4：Experimental Procedures and Operational Workflow:
Sequential deposition of SRO, PZT, and LVO layers on STO substrates, followed by characterization of structural, electrical, and optical properties. Photovoltaic measurements were performed under AM1.5G illumination.
5：5G illumination. Data Analysis Methods:
5. Data Analysis Methods: Analysis of XRD, RSM, AFM, PFM, and TEM data for structural characterization. Electrical measurements analyzed for photovoltaic performance, including PCE and photoresponse switchability.
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X-ray Diffractometer
X’Pert PRO
PANalytical
Measurement of crystalline phases and lattice parameters
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Physical Property Measurement System
PPMS
Quantum Design
Measurement of resistivity and Hall effect
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Ferroelectric Workstation
Precision Multiferroic
Radiant
Recording of P-V hysteresis loops
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Source Meter
6430
Keithley
Measurement of I-V characteristics
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Pulsed Laser Deposition System
KrF excimer laser
Deposition of SRO, PZT, and LVO thin films
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Atomic Force Microscope
Cypher
Asylum Research
Characterization of film morphology, domain switching, and surface potential
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Transmission Electron Microscope
Tecnai G2-F20
Study of microstructures of the films
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UV/Vis Spectrophotometer
UV1800
Shanghai Jinghua
Characterization of optical transmission properties
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Xenon Lamp
CEL-HXUV300
Beijing Zhongjiaojinyuan
Light source for photovoltaic measurements
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Optical Power Meter
CEL-NP2000
Beijing Zhongjiaojinyuan
Calibration of light intensity
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