研究目的
To assess the physics and fundamental-performance potential of various scaled mono-layer transition-metal-dichalcogenides and black-phosphorus (BP) MOSFETs down to a gate length of 5 nm, including the effect of electron-phonon scattering.
研究成果
The study concludes that HfS2 MOSFETs show good scalability down to a gate length of 5 nm with promising high on-current levels, while BP MOSFETs suffer from severe degradation due to strong optical-phonon coupling. The findings suggest potential for HfS2 in ultra-scaled CMOS applications but highlight the need for substrates that can mitigate the detrimental effects of optical-phonon scattering in BP.
研究不足
The study is limited by the computational complexity and the need for high-performance computing resources. Additionally, the impact of electron-phonon scattering on device performance may vary with material and device geometry.
1：Experimental Design and Method Selection:
The study employs a DFT-NEGF based ATOmistic-MOdelling Solver (ATOMOS) for quantum transport simulations, including electron-phonon scattering effects.
2：Sample Selection and Data Sources:
Mono-layer transition-metal-dichalcogenides and black-phosphorus (BP) MOSFETs are selected for study.
3：List of Experimental Equipment and Materials:
The study uses computational tools and software including QUANTUM ESSPRESSO for DFT calculations and wannier90 for Wannier function transformations.
4：Experimental Procedures and Operational Workflow:
The workflow involves DFT Hamiltonian computation, Wannierization, and NEGF transport simulations including electron-phonon scattering.
5：Data Analysis Methods:
The analysis includes comparing drain current – gate voltage characteristics and assessing the impact of electron-phonon scattering on device performance.
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