研究目的
Investigating the performance of a new ultrascaled junctionless graphene nanoribbon tunnel field-effect transistor (JL GNRTFET) through computational study.
研究成果
The proposed ultrascaled junctionless GNR tunneling FET can provide improved switching performance than its conventional counterpart. The proposed strategy can be applied to improve similar ultrascaled junctionless tunneling field-effect transistors for the future digital electronics.
研究不足
The study is based on computational simulations and does not include experimental validation. The ballistic transport is assumed while neglecting the scattering mechanisms due to the aggressive scaling of the nanodevices under investigation.
1：Experimental Design and Method Selection:
The study employs a quantum simulation approach based on the resolution of the Schr?dinger equation using the mode space non-equilibrium Green’s function formalism coupled self-consistently with a Poisson equation in the ballistic limit.
2：Sample Selection and Data Sources:
The proposed nanodevice is an armchair-edge graphene nanoribbon (AGNR) heavily n-type doped, with specific dimensions and properties.
3：List of Experimental Equipment and Materials:
The AGNR is sandwiched between two hafnium dioxide (HfO2) layers with specified dielectric constant and thickness.
4：Experimental Procedures and Operational Workflow:
The simulation involves self-consistently solving the Schr?dinger equation and 2D Poisson equation using the non-equilibrium Green’s function formalism and finite difference method, respectively.
5：Data Analysis Methods:
The performance assessment includes the IDS–VGS transfer characteristics, subthreshold swing, current ratio, intrinsic delay, and power-delay product.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
