摘要： Fabrication and characterization of p-PbI2/MgO/n-Si photodetectors by pulsed laser deposition within (2.7-2.5) eV. The current-voltage and capacitance-voltage properties of PbI2/MgO/Si photodetector were investigated. The best responsivity of p-PbI2/MgO/n-Si photodetectors was ~ investigated using x-ray diffraction XRD, UV-Vis absorption and scanning electron microscope SEM. The XRD results revealed a single crystalline MgO with cubic structure along the (200) PLD under different deposition temperatures Ts were demonstrated for the first time. Structural, optical and morphological properties of nanostructured MgO and PbI2/MgO films were plane, while the PbI2 film deposited on MgO was a single crystalline with hexagonal phase along (001) plane. The optical energy gaps of PbI2 films deposited on MgO film were found to be perovskite solar cells, photodetectors, X-ray detectors, photoconductors, biological labeling and diagnostics, active matrix flat panel imagers, and γ-ray detectors [3, 4]. PbI2 films are usually prepared thermal evaporation, chemical methods, pulsed laser deposition, atomic layer deposition, and electron beam evaporation [5-8]. The wider optical energy gap MgO (7.3 eV at room temperature) is a non-toxic, high specific surface reactivity and cubic crystal structure with Fm-3m space group and transparent at the visible light. MgO films have been used in many [1, 2]. Lead iodide has been used in numerous applications, for example, light emitting diodes, Lead iodide has a hexagonal structure with optical band gap around 2.2eV at room temperature Keywords: PbI2; MgO; PLD; Heterojunction; Silicon; photodetector; Deposition temperature 0.88A/W at 410nm when the photodetector was prepared at Ts = 45°C.